Search Results - "ZEMBUTSU, S"
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Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxy
Published in Applied physics letters (12-07-1993)“…The characteristics of deep hole traps in p-type ZnSe are studied by means of a transient capacitance spectroscopy technique. p-type ZnSe layers were grown by…”
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2
X-ray photoelectron spectroscopy studies of Ag photodoping in Se-Ge amorphous films
Published in Applied physics letters (15-12-1981)“…The Ag-deposited Se80Ge20 (at. %) amorphous films are found to show a large chemical shift (∼1.2 eV) in the Se 3d level toward lower binding energies and to…”
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3
ZnSe/ZnSe0.92S0.08/GaAs single-crystal waveguides as visible modulators
Published in Applied physics letters (31-12-1990)“…Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown…”
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4
Excitonic properties of Zn1-xCdxSe/ZnSe quantum well structures grown by metalorganic vapor phase epitaxy
Published in Journal of electronic materials (01-05-1993)Get full text
Conference Proceeding Journal Article -
5
Optical bistability and nonlinear switching due to increasing absorption in single-crystal ZnSe waveguides
Published in Applied physics letters (17-08-1987)“…Optical nonlinear switching and bistability due to increasing absorption have been observed in single-crystal ZnSe waveguides with contrast ratios of 16/1 and…”
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6
Electroabsorption and electrooptic modulation in single crystal ZnSe-ZnSSe waveguides grown by OMPVE on GaAs
Published in IEEE journal of quantum electronics (1992)“…With modulation of Ar laser light, modulation depth of 9.2 dB and phase shift of PI are achieved…”
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7
Electroabsorption and electrooptic modulation in single crystal ZnSe-ZnSSe waveguides grown by OMVPE on GaAs
Published in IEEE journal of quantum electronics (01-03-1992)“…Electroabsorption and the electrooptical effect were used to modulate argon laser light in ZnSe single crystal waveguides. The electrical contacts were…”
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8
X-Ray Photoelectron Spectroscopy Studies of Silver Photodoping in Se--Ge Amorphous Films
Published in Applied physics letters (15-12-1981)“…The Ag-deposited Se sub 80 Ge sub 20 (at.-%) amorphous films are found to show a large chemical shift ( approx 1.2 eV) in the Se 3d level toward lower binding…”
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9
Exciton properties of Zn sub 1 sub - sub x Cd sub x Se/ZnSe quantum well structures grown by metallorganic vapor phase epitaxy
Published in Journal of electronic materials (01-01-1993)“…Exciton optical absorption and emission properties were studied by electroreflectance, photocurrent, and PL spectrum measurements under controlled high…”
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Journal Article -
10
ZnSe/ZnSe(0.92)S(0.08)/GaAs single-crystal waveguides as visible modulators
Published in Applied physics letters (31-12-1990)“…Electrooptic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown…”
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Journal Article -
11
Nitrogen doped p-type ZnSe layer grown by metalorganic vapor phase epitaxy
Published in Japanese Journal of Applied Physics (01-05-1988)“…Nitrogen-doped ZnSe layers have been grown on (100) GaAs substrates by metalorganic vapor phase epitaxy using NH 3 as the doping material. The N-doped layers…”
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12
Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
Published in Applied physics letters (31-03-1986)“…A low-temperature growth technique for GaN single crystal films has been developed utilizing electron cyclotron resonance (ECR) plasma excitation. The GaN film…”
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13
A boundary layer model for the MOCVD process in a vertical cylinder reactor
Published in Japanese Journal of Applied Physics (01-09-1987)“…The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just…”
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14
Comments and Reply on (a Paper by N. Funakoshi and S. Zembutsu) `Anomalous Ag Surface Diffusion in Amorphous Se--Ge/Ag Inorganic Resist
Published in Jpn. J. Appl. Phys. 2, Lett (01-05-1982)“…Cf. ibid. , 1981, 20, L649. Agreement is expressed with the proposed explanation of the edge sharpening effect induced by the lateral Ag diffusion in the Ag…”
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15
Use of ethyliodide in preparation of low-resistivity n-type ZnSe by metalorganic vapor phase epitaxy
Published in Japanese Journal of Applied Physics (01-02-1988)“…Ethyliodide is shown to be useful as a dopant for growing high-quality n-type ZnSe layers by metalorganic vapor phase epitaxy. Low-resistivity ZnSe…”
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16
Excitonic photon absorption-emission characteristics in ZnCdSe-ZnSe single-quantum-well structures
Published in Japanese Journal of Applied Physics (01-09-1992)“…Excitonic photon absorption and emission processes are investigated under zero or external electric fields on MOVPE grown (Zn 1- x Cd x )Se-ZnSe: x =0.18…”
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17
High-quality ZnSe film growth by 0.1-atm MOVPE under the diethylzinc diffusion-limited condition
Published in Japanese Journal of Applied Physics (01-08-1987)“…The effects of the growth conditions on the growth rate, crystallographic and luminescence properties were investigated for ZnSe film growth by metalorganic…”
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18
Second harmonic generation in inclusion complexes
Published in Journal of Inclusion Phenomena (01-09-1984)Get full text
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19
Growth of ZnSe films on InxGa1-xAs substrate by metalorganic vapor phase epitaxy
Published in Japanese journal of applied physics (01-04-1986)Get full text
Journal Article -
20
Photoluminescence due to lattice-mismatch defects in high-purity ZnSe layers grown by metalorganic vapor phase epitaxy
Published in Japanese Journal of Applied Physics (01-03-1988)“…High-purity ZnSe layers grown by metalorganic vapor phase epitaxy exhibit an unusually strong luminescence band at 2.60 eV ( Y band), which is extremely…”
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