Search Results - "ZEMBUTSU, S"

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  1. 1

    Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxy by ANDO, K, KAWAGUCHI, Y, OHNO, T, OHKI, A, ZEMBUTSU, S

    Published in Applied physics letters (12-07-1993)
    “…The characteristics of deep hole traps in p-type ZnSe are studied by means of a transient capacitance spectroscopy technique. p-type ZnSe layers were grown by…”
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  2. 2

    X-ray photoelectron spectroscopy studies of Ag photodoping in Se-Ge amorphous films by Zembutsu, S.

    Published in Applied physics letters (15-12-1981)
    “…The Ag-deposited Se80Ge20 (at. %) amorphous films are found to show a large chemical shift (∼1.2 eV) in the Se 3d level toward lower binding energies and to…”
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  3. 3

    ZnSe/ZnSe0.92S0.08/GaAs single-crystal waveguides as visible modulators by JUPINA, M. H, GARMIRE, E. M, SHIBATA, N, ZEMBUTSU, S

    Published in Applied physics letters (31-12-1990)
    “…Electro-optic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown…”
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    Optical bistability and nonlinear switching due to increasing absorption in single-crystal ZnSe waveguides by KIM, B. G, GARMINE, E, SHIBATA, N, ZEMBUTSU, S

    Published in Applied physics letters (17-08-1987)
    “…Optical nonlinear switching and bistability due to increasing absorption have been observed in single-crystal ZnSe waveguides with contrast ratios of 16/1 and…”
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  6. 6

    Electroabsorption and electrooptic modulation in single crystal ZnSe-ZnSSe waveguides grown by OMPVE on GaAs by JUPINA, M. H, GERMIRE, E. M, SHIBATA, N, ZEMBUTSU, S

    “…With modulation of Ar laser light, modulation depth of 9.2 dB and phase shift of PI are achieved…”
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  7. 7

    Electroabsorption and electrooptic modulation in single crystal ZnSe-ZnSSe waveguides grown by OMVPE on GaAs by Jupina, M.H., Garmire, E.M., Shibata, N., Zembutsu, S.

    Published in IEEE journal of quantum electronics (01-03-1992)
    “…Electroabsorption and the electrooptical effect were used to modulate argon laser light in ZnSe single crystal waveguides. The electrical contacts were…”
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  8. 8

    X-Ray Photoelectron Spectroscopy Studies of Silver Photodoping in Se--Ge Amorphous Films by Zembutsu, S

    Published in Applied physics letters (15-12-1981)
    “…The Ag-deposited Se sub 80 Ge sub 20 (at.-%) amorphous films are found to show a large chemical shift ( approx 1.2 eV) in the Se 3d level toward lower binding…”
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  9. 9

    Exciton properties of Zn sub 1 sub - sub x Cd sub x Se/ZnSe quantum well structures grown by metallorganic vapor phase epitaxy by Ohki, A, Ando, K, Zembutsu, S

    Published in Journal of electronic materials (01-01-1993)
    “…Exciton optical absorption and emission properties were studied by electroreflectance, photocurrent, and PL spectrum measurements under controlled high…”
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  10. 10

    ZnSe/ZnSe(0.92)S(0.08)/GaAs single-crystal waveguides as visible modulators by Jupina, M H, Garmire, E M, Shibata, N, ZEMBUTSU, S

    Published in Applied physics letters (31-12-1990)
    “…Electrooptic and electroabsorptive modulations have been demonstrated in Schottky barriers in epitaxial ZnSe waveguides with cladding layers of ZnSeS grown…”
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    Journal Article
  11. 11

    Nitrogen doped p-type ZnSe layer grown by metalorganic vapor phase epitaxy by OHKI, A, SHIBATA, N, ZEMBUTSU, S

    Published in Japanese Journal of Applied Physics (01-05-1988)
    “…Nitrogen-doped ZnSe layers have been grown on (100) GaAs substrates by metalorganic vapor phase epitaxy using NH 3 as the doping material. The N-doped layers…”
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  12. 12

    Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy by ZEMBUTSU, S, SASAKI, T

    Published in Applied physics letters (31-03-1986)
    “…A low-temperature growth technique for GaN single crystal films has been developed utilizing electron cyclotron resonance (ECR) plasma excitation. The GaN film…”
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  13. 13

    A boundary layer model for the MOCVD process in a vertical cylinder reactor by SHIBATA, N, ZEMBUTSU, S

    Published in Japanese Journal of Applied Physics (01-09-1987)
    “…The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just…”
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  14. 14

    Comments and Reply on (a Paper by N. Funakoshi and S. Zembutsu) `Anomalous Ag Surface Diffusion in Amorphous Se--Ge/Ag Inorganic Resist by Tai, K L, Funakoshi, N, Zembutsu, S

    Published in Jpn. J. Appl. Phys. 2, Lett (01-05-1982)
    “…Cf. ibid. , 1981, 20, L649. Agreement is expressed with the proposed explanation of the edge sharpening effect induced by the lateral Ag diffusion in the Ag…”
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  15. 15

    Use of ethyliodide in preparation of low-resistivity n-type ZnSe by metalorganic vapor phase epitaxy by SHIBATA, N, OHKI, A, ZEMBUTSU, S

    Published in Japanese Journal of Applied Physics (01-02-1988)
    “…Ethyliodide is shown to be useful as a dopant for growing high-quality n-type ZnSe layers by metalorganic vapor phase epitaxy. Low-resistivity ZnSe…”
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  16. 16

    Excitonic photon absorption-emission characteristics in ZnCdSe-ZnSe single-quantum-well structures by ANDO, K, OHKI, A, ZEMBUTSU, S

    Published in Japanese Journal of Applied Physics (01-09-1992)
    “…Excitonic photon absorption and emission processes are investigated under zero or external electric fields on MOVPE grown (Zn 1- x Cd x )Se-ZnSe: x =0.18…”
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  17. 17

    High-quality ZnSe film growth by 0.1-atm MOVPE under the diethylzinc diffusion-limited condition by SHIBATA, N, OHKI, A, ZEMBUTSU, S

    Published in Japanese Journal of Applied Physics (01-08-1987)
    “…The effects of the growth conditions on the growth rate, crystallographic and luminescence properties were investigated for ZnSe film growth by metalorganic…”
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    Photoluminescence due to lattice-mismatch defects in high-purity ZnSe layers grown by metalorganic vapor phase epitaxy by SHIBATA, N, OHKI, A, ZEMBUTSU, S, KATSUI, A

    Published in Japanese Journal of Applied Physics (01-03-1988)
    “…High-purity ZnSe layers grown by metalorganic vapor phase epitaxy exhibit an unusually strong luminescence band at 2.60 eV ( Y band), which is extremely…”
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