Search Results - "ZAPPE, H. P"

Near-infrared vertical-cavity surface-emitting lasers with 3-MHz linewidth by De Sopra, F.M., Zappe, H.P., Moser, M., Hovel, R., Gauggel, H.-P., Gulden, K.

“…The linewidth of electrically pumped vertical-cavity surface-emitting lasers optimized for spectroscopic applications in the near-infrared has been examined in…”
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Optical displacement measurement with GaAs/AlGaAs-based monolithically integrated Michelson interferometers by Hofstetter, D., Zappe, H.P., Dandliker, R.

“…Two monolithically integrated optical displacement sensors fabricated in the GaAs/AlGaAs material system are reported. These single-chip microsystems are…”
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A monolithically integrated double Michelson interferometer for optical displacement measurement with direction determination by Hofstetter, D., Zappe, H.P., Dandliker, R.

“…A monolithically integrated optical displacement sensor fabricated in the GaAs-AlGaAs material system is reported. The single-chip device consists of a…”
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Investigation of optical losses in photoelastic and ridge waveguides in GaAs-AlGaAs heterostructures by Liu, Q.Z., Yu, L.S., Lau, S.S., Zappe, H.P., Epler, J.E.

“…Two approaches have been used to fabricate stable photoelastic waveguides with planarized surfaces on GaAs-AlGaAs heterostructures. The first approach uses…”
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Continuous-wave operation of phase-coupled vertical-cavity surface-emitting laser arrays by Monti di Sopra, F., Brunner, M., Gauggel, H.-P., Zappe, H. P., Moser, M., Hövel, R., Kapon, E.

“…Coupled arrays of vertical-cavity surface-emitting lasers were realized by patterning the reflectivity of the top-distributed Bragg reflector using a…”
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Interfacial charge modification between SiO2 and silicon by ARONOWITZ, S, ZAPPE, H. P, HU, C

“…A positive flatband voltage shift, ΔVfb ≂+0.4 V, with respect to unimplanted portions of the same wafer, was obtained when calcium (1×1013 cm−2) was implanted…”
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Carrier transport in HEMT's analyzed by high-field electroluminescence by Zappe, H.P., As, D.J.

“…The high-field emission of visible light from GaAs and InGaAs high electron mobility transistors (HEMTs) has been used to analyze the hot-electron conduction…”
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Quantum-well intermixing for fabrication of lasers and photonic integrated circuits by Hofstetter, D., Maisenholder, B., Zappe, H.P.

“…Various applications of quantum-well intermixing, ranging from multiwavelength lasers to complex photonic integrated circuits, are described. The fabrication…”
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Characteristics of CMOS devices in high-energy boron-implanted substrates by Zappe, H.P., Hu, C.

“…CMOS devices on substrates subject to high-energy implantation of boron for buried-layer fabrication are examined. FET device characteristics, threshold…”
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Influence of RIE-induced damage on luminescence and electron transport properties of AlGaAs-GaAs heterostructures by AS, D. J, FREY, JANTZ, W, KAUFEL, G, KÖHLER, K, ROTHEMUND, W, SCHWEIZER, ZAPPE, H. P

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A GaAs/AlGaAs-based refractometer platform for integrated optical sensing applications by Maisenhölder, Bernd, Zappe, Hans P., Kunz, Rino E., Riel, Peter, Moser, Michael, Edlinger, Johannes

“…We present a new type of integrated optical refractometer, based on a Mach-Zehnder interferometer using III–V semiconductor and TiO 2 on SiO 2 waveguides. We…”
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Operation of CMOS devices with a floating well by Zappe, H.P., Gupta, R.K., Sakai, I., Chenming Hu

“…The operation of CMOS devices in an electrically floating well is considered. The impetus for this study is the potential reduction of silicon area consumption…”
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Monolithically integrated DBR laser, detector, and transparent waveguide fabricated in a single growth step by Hofstetter, D., Zappe, H.P., Epler, J.E., Riel, P.

“…The monolithic integration of a GaAs-AlGaAs distributed Bragg reflector (DBR) laser with a nonabsorbing grating section, a transparent waveguide, and an…”
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Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering by Hofstetter, D., Zappe, H. P., Epler, J. E., Riel, P.

“…Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing…”
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Mechanisms for the emission of visible light from GaAs field-effect transistors by ZAPPE, H. P, AS, D. J

“…The emission of visible light from GaAs metal-semiconductor field-effect transistors under high electric field conditions is studied in detail in order to…”
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Spectrum of hot-electron luminescence from high electron mobility transistors by ZAPPE, H. P, AS, D. J

“…GaAs and InGaAs high electron mobility transistors (HEMTs) have been found to emit visible and infrared radiation when subject to high drain/source biases…”
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A transient analysis of latchup in bulk CMOS by Troutman, R.R., Zappe, H.P.

“…This paper presents an analytical model of transient latchup in bulk CMOS that predicts the time-dependent current and voltage characteristics of the parasitic…”
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Anomalous longitudinal mode hops in GaAs/AlGaAs distributed Bragg reflector lasers by Hofstetter, Daniel, Zappe, Hans P.

“…We investigate normal and anomalous longitudinal mode hops in GaAs/AlGaAs-based distributed Bragg reflector (DBR) lasers; anomalous mode hops are defined as…”
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Power-Up Triggering Conditions for Latch-Up in Bulk CMOS by Troutman, R. R., Zappe, H. P.

“…Current flow from a transient stimulus can activate the parasitic bipolar devices inherent in bulk CMOS integrated circuits. Whether or not latch-up results…”
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VCSEL array technology for optical interconnects by Gulden, K.H., Eitel, S., Gauggel, H.P., Hovel, R., Moser, M., Zappe, H.P.

“…We discuss the state of the art in individually addressable VCSEL arrays including future developments and limitations. Special emphasis is given to the…”
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