Search Results - "ZALETIN, V. M"
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1
The sensitivity of pure and doped TlBr crystals
Published in IEEE Nuclear Science Symposuim & Medical Imaging Conference (01-10-2010)“…The sensivity of TlBr detectors to 137 Cs gamma-ray in dose rate range from 0,033 Gy/min to 3,84 Gy/min has studied in current mode. The pure and doped…”
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Conference Proceeding -
2
Development of semiconductor detectors based on wide-gap materials
Published in Atomic energy (New York, N.Y.) (01-11-2004)“…The properties of promising materials for uncooled semiconductor x- and g-ray detectors are examined. Work being performed in this field in our country is…”
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Journal Article -
3
Uncooled CdTe and CdZnTe Based Detectors for γ-Radiation Spectrometry
Published in Atomic energy (New York, N.Y.) (01-03-2017)“…The results of a study of the electrophysical characteristics of the detector single crystals CdZnTe and CdTe obtained from the best domestic (Institute of…”
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Journal Article -
4
Evolution of Nitrogen-Free γ-Ray Spectrometers Based on Semiconductor Detectors with Ultrapure Germanium
Published in Atomic energy (New York, N.Y.) (01-05-2013)“…The evolution of domestic designs of nitrogen-free spectrometers with microcryogenic cooling systems with semiconductor detectors based on ultrapure germanium…”
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Journal Article -
5
The investigation of the ionic component of conductivity in TlBr
Published in IEEE Nuclear Science Symposuim & Medical Imaging Conference (01-10-2010)“…The dark conductivity has been studied on pure and doped TlBr crystals obtained by Bridgement method with different compositions and pressures of the residual…”
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Conference Proceeding -
6
Uncooled semiconductor detectors based on crystals of wide bandgap compounds grown from the gas phase
Published in Atomic energy (New York, N.Y.) (01-05-1999)“…Particular attention is devoted to investigating the spectrometric characteristics of detectors based on crystals of wide bandgap compounds (GaAs, HgI ^sub 2^,…”
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Journal Article -
7
Use of epitaxial gallium arsenide in detectors
Published in Atomic energy (New York, N.Y.) (01-11-2007)“…The results of investigations of semiconductor detectors on the basis of epitaxial layers of gallium arsenide for detecting x rays and low-energy radiation are…”
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Journal Article -
8
Wide-bandgap compound semiconductors for X- or gamma-ray detectors
Published in Russian microelectronics (01-12-2011)“…Although Ge and Si are currently the major semiconductor materials for nuclear-radiation detectors used in high-resolution nuclear spectroscopy, and will…”
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Journal Article -
9
Uncooled CdTe and CdZnTe based detectors for [gamma]-radiation spectrometry
Published in Atomic energy (New York, N.Y.) (01-03-2017)“…The results of a study of the electrophysical characteristics of the detector single crystals CdZnTe and CdTe obtained from the best domestic (Institute of…”
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Journal Article -
10
Kinetics of the current response in TlBr detectors under a high dose rate of {gamma}-ray irradiation
Published in Semiconductors (Woodbury, N.Y.) (15-03-2012)“…The kinetics of the photocurrent response in doped and undoped TlBr samples subjected to irradiation with {gamma}-ray photons from a {sup 137}Cs source with…”
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Journal Article -
11
Recombination and trapping centers in pure and doped TlBr crystals
Published in Semiconductors (Woodbury, N.Y.) (01-09-2014)“…TlBr is a promising wide-gap semiconductor for developing γ-radiation detectors. One of the limiting factors in developing the technology of detectors is the…”
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Journal Article -
12
Current response of a TlBr detector to [sup.137]Csγ-ray radiation
Published in Semiconductors (Woodbury, N.Y.) (01-05-2011)“…The current response of a TlBr detector to [sup.137]Cs γ-ray radiation has been studied in the dose-rate range 0.033-3.84 Gy/min and within the voltage range…”
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Journal Article -
13
Current response of a TlBr detector to {sup 137}Cs {gamma}-ray radiation
Published in Semiconductors (Woodbury, N.Y.) (15-05-2011)“…The current response of a TlBr detector to {sup 137}Cs {gamma}-ray radiation has been studied in the dose-rate range 0.033-3.84 Gy/min and within the voltage…”
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Journal Article -
14
Current response of a TlBr detector to 137Cs γ-ray radiation
Published in Semiconductors (Woodbury, N.Y.) (01-05-2011)“…The current response of a TlBr detector to 137 Cs γ-ray radiation has been studied in the dose-rate range 0.033–3.84 Gy/min and within the voltage range 1–300…”
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Journal Article -
15
Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiation
Published in Semiconductors (Woodbury, N.Y.) (01-03-2012)“…The kinetics of the photocurrent response in doped and undoped TlBr samples subjected to irradiation with γ-ray photons from a 137 Cs source with the dose rate…”
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Journal Article -
16
Development of semiconductor detectors based on wide-gap materials
Published in Atomic energy (New York, N.Y.) (01-11-2004)“…The properties of promising materials for uncooled semiconductor x- and γ-ray detectors are examined. Work being performed in this field in our country is…”
Get full text
Journal Article -
17
Evolution of Nitrogen-Free [gamma]-Ray Spectrometers Based on Semiconductor Detectors with Ultrapure Germanium
Published in Atomic energy (New York, N.Y.) (01-05-2013)“…The evolution of domestic designs of nitrogen-free spectrometers with microcryogenic cooling systems with semiconductor detectors based on ultrapure germanium…”
Get full text
Journal Article -
18
Use of TlBr crystals for x- and γ-ray detectors
Published in Atomic energy (New York, N.Y.) (01-04-2009)“…The development and investigations of uncooled semiconductor x- and γ-ray detectors based on thallium bromide crystals grown by the Bridgman–Stockbarger method…”
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Journal Article -
19
Use of TlBr crystals for x- and g-ray detectors
Published in Atomic energy (New York, N.Y.) (01-04-2009)“…The development and investigations of uncooled semiconductor x- and g-ray detectors based on thallium bromide crystals grown by the Bridgman-Stockbarger method…”
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Journal Article -
20
Use of TlBr crystals for x- and [gamma]-ray detectors
Published in Atomic energy (New York, N.Y.) (01-04-2009)“…The development and investigations of uncooled semiconductor x- and γ-ray detectors based on thallium bromide crystals grown by the Bridgman-Stockbarger method…”
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Journal Article