Commercial production of QWIP wafers by molecular beam epitaxy

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch...

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Bibliographic Details
Published in:	Infrared physics & technology Vol. 42; no. 3; pp. 407 - 415
Main Authors:	Fastenau, J.M, Liu, W.K, Fang, X.M, Lubyshev, D.I, Pelzel, R.I, Yurasits, T.R, Stewart, T.R, Lee, J.H, Li, S.S, Tidrow, M.Z
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-06-2001 Elsevier
Subjects:	Applied sciences Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors Economics Electronics Exact sciences and technology General aspects High-resolution X-ray diffraction Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Molecular beam epitaxy Multi-wafer MBE Optoelectronic devices Photodetectors (including infrared and CCD detectors) Physics Quantum well infrared photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Molecular beam epitaxy Multi-wafer MBE Quantum well infrared photodetectors 85.60.Gz High-resolution X-ray diffraction Aluminium arsenides Infrared detectors Gallium arsenides Semiconductor materials Radiation detectors Ternary compounds Quantum wells Technicoeconomic study Photodetectors Layer thickness Commercialization
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Summary:	As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.
ISSN:	1350-4495 1879-0275
DOI:	10.1016/S1350-4495(01)00100-1