Search Results - "Yunovich, A. E."

Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs by Volkov, V. V., Kogan, L. M., Turkin, A. N., Yunovich, A. E.

“…The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p – n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible…”
Get full text

Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells by Mamakin, S. S., Yunovich, A. É., Wattana, A. B., Manyakhin, F. I.

Get full text

Nitrogen divacancies — The possible cause of the “yellow band” in the luminescence spectra of GaN by Yunovich, A. É.

“…A strong analogy is demonstrated between the well-known impurity complex NN1 in GaP consisting of a pair of nearest-neighbor isovalent nitrogen impurity atoms…”
Get full text

Preparation and optical properties of Eu2+ doped CaGa2S4-CaS composite bicolor phosphor for white LED by Jabbarov, R., Musayeva, N., Scholz, F., Wunderer, T., Turkin, A. N., Shirokov, S. S., Yunovich, A. E.

“…In the present paper, we report the optical properties of the bicolor composite phosphor on the base of CaS and Ga2S3 and study the possibility using this…”
Get full text

Emission spectra of InGaN/AlGaN/GaN quantum well heterostructures: Model of the two-dimensional joint density of states by Badgutdinov, M. L., Yunovich, A. É.

“…The luminescence spectra of light emitting diodes based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells are analyzed in the context of a model…”
Get full text

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures by Avakyants, L. P., Bokov, P. Yu, Chervyakov, A. V., Chuyas, A. V., Yunovich, A. E., Vasileva, E. D., Bauman, D. A., Uelin, V. V., Yavich, B. S.

“…Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and…”
Get full text

Uniaxial compression influence on electroluminescence spectra in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs heterostructures by Minina, N Y, Bogdanov, E V, Kissel, H, Shirokov, S S, Yunovich, A E

“…We present new results on the influence of uniaxial stress up to P=400 MPa along [110] direction on the electroluminescence (EL) spectra of…”
Get full text

Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes by Kudryashov, V.E., Turkin, A.N., Yunovich, A.E., Zolina, K.G., Nakamura, S.

“…Electroluminescence spectra of blue and green light-emitting diodes (LEDs) based on In xGa 1 − xN/Al yGa 1 − yN/GaN heterostructures with a thin quantum well…”
Get full text

Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes by Kudryashov, V. E., Mamakin, S. S., Yunovich, A. É.

Get full text

Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures by Kovalev, A. N., Manyakhin, F. I., Kudryashov, V. E., Turkin, A. N., Yunovich, A. É.

Get full text

Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells by Zolina, K. G., Kudryashov, V. E., Turkin, A. N., Yunovich, A. É.

Get full text

Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors by Gal’china, N. A., Kogan, L. M., Soshchin, N. P., Shirokov, S. S., Yunovich, A. E.

“…The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral…”
Get full text

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures by Avakyants, L. P., Badgutdinov, M. L., Bokov, P. Yu, Chervyakov, A. V., Shirokov, S. S., Yunovich, A. E., Bogdanov, A. A., Vasil’eva, E. D., Nikolaev, D. A., Feopentov, A. V.

“…p−n InGaN/AlGaN/GaN heterostructures with InGaN/AlGaN multiple quantum wells are studied by electroreflectance spectroscopy. The structures are grown by…”
Get full text

Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings by Badgutdinov, M. L., Korobov, E. V., Luk’yanov, F. A., Yunovich, A. É., Kogan, L. M., Gal’china, N. A., Rassokhin, I. T., Soshchin, N. P.

“…The luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes fabricated from p-n InGaN/AlGaN/GaN blue-light-emitting…”
Get full text

Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence by Kudryashov, V. E., Mamakin, S. S., Turkin, A. N., Yunovich, A. É., Kovalev, A. N., Manyakhin, F. I.

Get full text

Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells by Yunovich, A.E., Kudryashov, V.E.

“…Electroluminescence spectra of GaN based LEDs are analyzed quantitatively using a model of 2D density of states with band tails. Calculations take into account…”
Get full text

Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation by Kovalev, A. N., Manyakhin, F. I., Kudryashov, V. E., Turkin, A. N., Yunovich, A. É.

Get full text

Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance by Schwegler, V., Schad, S. S., Kirchner, C., Seyboth, M., Kamp, M., Ebeling, K. J., Kudryashov, V. E., Turkin, A. N., Yunovich, A. E., Stempfle, U., Link, A., Limmer, W., Sauer, R.

“…Heat generated by ohmic losses is a critical parameter for performance and lifetime of light‐emitting diodes (LEDs). The temperature of InGaN MQW LEDs during…”
Get full text

Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells by Yunovich, A. E., Kudryashov, V. E., Mamakin, S. S., Turkin, A. N., Kovalev, A. N., Manyakhin, F. I.

“…Spectra and quantum efficiency ηe of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10—6 to 10—1…”
Get full text

Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells by Kudryashov, V. E., Turkin, A. N., Yunovich, A. É., Kovalev, A. N., Manyakhin, F. I.

Get full text