Search Results - "Yun, Nick"

An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs by Kim, Dongyoung, yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

“…A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell…”
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The Effect of Deep JFET and P-well Implant of 1.2kV 4H-SiC MOSFETs by Kim, Dongyoung, Yun, Nick, Morgan, Adam J., Sung, Woongje

“…1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and…”
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Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation by Kim, Dongyoung, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

“…SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN…”
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Design and Fabrication Approaches of 400-600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs Application by Yun, Nick, Sung, Woongje

“…This article reports the demonstration and fabrication of 400-600 V, 4H-SiC lateral MOSFETs on 6-in, N+ substrates. The P-top was implanted on an…”
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Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices by Yun, Nick, Sung, Woongje

“…The article discusses the impact of thermal oxidation process conditions on the implanted junction-termination-extension (JTE) dose using various edge…”
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Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications by Yun, Nick, Lynch, Justin, Sung, Woongje

“…This paper reports the demonstration of a 600 V 4H-SiC lateral MOSFET with a large current handling capability (10 A). To achieve a high breakdown voltage in a…”
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Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications by Yun, Nick, Lynch, Justin, Sung, Woongje

“…This article reports the demonstration of a low-voltage (<; 600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET). A…”
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Packaging of a 10-kV Double-Side Cooled Silicon Carbide Diode Module With Thin Substrates Coated by a Nonlinear Resistive Polymer-Nanoparticle Composite by Zhang, Zichen, Lu, Shengchang, Wang, Boyan, Zhang, Yuhao, Yun, Nick, Sung, Woongje, Ngo, Khai D. T., Lu, Guo-Quan

“…Medium-voltage silicon carbide (SiC) power modules are a critical component in grid-bound power conversion systems, and the packaging of these modules dictates…”
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Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance by Yun, Nick, Kim, Dongyoung, Lynch, Justin, Morgan, Adam J., Sung, Woongje, Kang, Minseok, Agarwal, Anant, Green, Ronald, Lelis, Aivars

“…13-kV 4H-SiC MOSFETs were successfully fabricated on a 125-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula>-thick…”
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Advancing Static Performance and Ruggedness of 600 V SiC MOSFETs: Experimental Analysis and Simulation Study by Kim, Dongyoung, Yun, Nick, Sung, Woongje

“…600 V MOSFETs were fabricated on 6-inch 4H-SiC substrates. Channel lengths and JFET widths were varied to study their impact on the on-state performances and…”
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Design Considerations for High Voltage SiC Power Devices: An Experimental Investigation into Channel Pinching of 10kV SiC Junction Barrier Schottky (JBS) Diodes by Lynch, Jusitn, Yun, Nick, Sung, Woongje

“…This paper reports on the design, fabrication and electrical characteristics of 10kV 4H-SiC JBS diodes. Both Ni and Ti JBS diodes were fabricated on 7×10 14 cm…”
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Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications by Yun, Nick, Lynch, Justin, Sung, Woongje

“…This article reports the demonstration of a low-voltage (<; 600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET). A…”
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The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs by Kim, Dongyoung, Yun, Nick, Morgan, Adam J., Sung, Woongje

“…Not provided…”
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Package Design and Analysis of a 20-kV Double-Sided Silicon Carbide Diode Module With Polymer Nanocomposite Field-Grading Coating by Zhang, Zichen, Arriola, Emmanuel, Nicholas, Carl, Lynch, Justin, Yun, Nick, Morgan, Adam, Sung, Woongje, Ngo, Khai D. T., Lu, Guo-Quan

“…To tackle the insulation challenges present in packaging medium-voltage (MV) silicon carbide (SiC) power devices, we developed a package design for a 20-kV…”
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Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3 rd Quadrant Operation by Kim, Dongyoung, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

“…Not provided…”
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Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3 rd Quadrant Operation by Kim, Dongyoung, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

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Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness by Kim, Dongyoung, Morgan, Adam J, Yun, Nick, Sung, Woongje, Agarwal, Anant, Kaplar, Robert

“…Non-Isothermal simulations to understand Short-Circuit (SC) behavior of SiC MOSFETs were performed. Using the established model, structures to enhance the SC…”
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An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs by Kim, Dongyoung, yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

“…Not provided…”
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Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs by Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

“…This paper reports static, dynamic, and short-circuit characteristics of split-gate (SG) 1.2 kV 4H-SiC MOSFETs. Conventional (C) MOSFETs and SG-MOSFETs were…”
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A New Junction Barrier Schottky Diode Using a Novel Lateral Architecture on a 4H-SiC Substrate by Lynch, Justin, Yun, Nick, Sung, Woongje

“…For the first time, a high voltage, high current, 4H-SiC lateral Junction Barrier Schottky (JBS) diode has been demonstrated. The proposed lateral diode is…”
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