Search Results - "Yum, Jung Hwan"

Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells by Wang, Lifen, Liu, Lei, Chen, Ji, Mohsin, Ali, Yum, Jung Hwan, Hudnall, Todd W., Bielawski, Christopher W., Rajh, Tijana, Bai, Xuedong, Gao, Shang‐Peng, Gu, Gong

“…Using high‐resolution transmission electron microscopy and electron energy‐loss spectroscopy, we show that beryllium oxide crystallizes in the planar hexagonal…”
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Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide by Min Lee, Seung, Hwan Yum, Jung, Larsen, Eric S., Chul Lee, Woo, Keun Kim, Seong, Bielawski, Christopher W., Oh, Jungwoo

“…Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire…”
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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors by Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C.

“…We have applied single InP barrier layer with different thicknesses and InP/In0.52Al0.48As double-barrier layer to In0.7Ga0.3As Al2O3 metal-oxide-semiconductor…”
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Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides by Zhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C.

“…We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In0.53Ga0.47As metal-oxide-semiconductor…”
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Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation by Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C.

“…In this work, a postgate CF4 plasma treatment has been demonstrated on In0.53Ga0.47As channel metal-oxide-semiconductor field-effect transistors. Fluorine (F)…”
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Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement by Jung Hwan Yum, Bersuker, G., Akyol, T., Ferrer, D. A., Lei, M., Keun Woo Park, Hudnall, T. W., Downer, M. C., Bielawski, C. W., Yu, E. T., Price, J., Lee, J. C., Banerjee, S. K.

“…In a previous study, we demonstrated that the BeO film grown by atomic layer deposition (ALD) on Si and III-V metal-oxide-semiconductor devices has excellent…”
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Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath by Ki, Bugeun, Song, Yunwon, Choi, Keorock, Yum, Jung Hwan, Oh, Jungwoo

“…Conventional lithography using photons and electrons continues to evolve to scale down three-dimensional nanoscale patterns, but the complexity of technology…”
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Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation by Yoon, Seonno, Lee, Seung Min, Yum, Jung Hwan, Bielawski, Christopher W., Lee, Hi-Deok, Oh, Jungwoo

“…The growth characteristics and electrical properties of thin films of crystalline beryllium oxide (BeO) on Si (100) substrates grown using electron beam…”
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Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition by Jang, Yoonseo, Lee, Seung Min, Jung, Do Hwan, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Oh, Jungwoo

“…•Beryllium oxide (BeO) thin films were grown by plasma enhanced atomic layer deposition (PEALD).•Growth rate of PEALD BeO (1.1 Å/cycle) is higher, showing…”
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Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs by Lee, Seung Min, Jung, Do Hwan, Yoon, Seonno, Jang, Yoonseo, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Oh, Jungwoo

“…•Bandgap of the ALD-BeO film is measured to be 8.2 ± 0.05 eV by REELS.•Valence band offset of the BeO/AlGaN interfaces is determined to be 1.1 ± 0.1 eV by…”
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Atomic-layer deposition of crystalline BeO on SiC by Lee, Seung Min, Jang, Yoonseo, Jung, Jongho, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Wang, Weijie, Ryou, Jae-Hyun, Kim, Hyun-Seop, Cha, Ho-Young, Oh, Jungwoo

“…•Single-crystalline BeO films are epitaxially grown on 4H-SiC substrates by ALD.•Domain structures of BeO/4H-SiC (8/7 and 9/8) have residual mismatches of…”
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Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors by Wang, Weijie, Lee, Seung Min, Pouladi, Sara, Chen, Jie, Shervin, Shahab, Yoon, Seonno, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Chatterjee, Bikramjit, Choi, Sukwon, Oh, Jungwoo, Ryou, Jae-Hyun

“…We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with…”
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Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates by Lee, Seung Min, Yum, Jung Hwan, Yoon, Seonno, Larsen, Eric S, Lee, Woo Chul, Kim, Seong Keun, Shervin, Shahab, Wang, Weijie, Ryou, Jae-Hyun, Bielawski, Christopher W, Oh, Jungwoo

“…We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO…”
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Domain epitaxy of crystalline BeO films on GaN and ZnO substrates by Lee, Seung Min, Yum, Jung Hwan, Larsen, Eric S., Shervin, Shahab, Wang, Weijie, Ryou, Jae‐Hyun, Bielawski, Christopher W., Lee, Woo Chul, Kim, Seong Keun, Oh, Jungwoo

“…We demonstrated the growth of wurtzite‐crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD)…”
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Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O3 as Oxygen Sources by Lee, Woo Chul, Cho, Cheol Jin, Kim, Sangtae, Larsen, Eric S, Yum, Jung Hwan, Bielawski, Christopher W, Hwang, Cheol Seong, Kim, Seong Keun

“…Growth characteristics and properties of BeO films grown by atomic layer deposition (ALD) are investigated. ALD chemistries between dimethylberyllium and two…”
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Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H 2 O and O 3 as Oxygen Sources by Lee, Woo Chul, Cho, Cheol Jin, Kim, Sangtae, Larsen, Eric S., Yum, Jung Hwan, Bielawski, Christopher W., Hwang, Cheol Seong, Kim, Seong Keun

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Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å by Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C.

“…In this letter, we demonstrate the electrical properties of metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors…”
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Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects by Lee, Seung Min, Jang, Yoonseo, Jung, Jongho, Yum, Jung Hwan, Larsen, Eric S, Lee, Sang Yeon, Seo, Hyungtak, Bielawski, Christopher W, Lee, Hi-Deok, Oh, Jungwoo

“…A crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were…”
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Synthesis of Honeycomb‐Structured Beryllium Oxide via Graphene Liquid Cells by Wang, Lifen, Liu, Lei, Chen, Ji, Mohsin, Ali, Yum, Jung Hwan, Hudnall, Todd W., Bielawski, Christopher W., Rajh, Tijana, Bai, Xuedong, Gao, Shang‐Peng, Gu, Gong

“…Using high‐resolution transmission electron microscopy and electron energy‐loss spectroscopy, we show that beryllium oxide crystallizes in the planar hexagonal…”
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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C.

“…We present n-channel enhancement-mode inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited…”
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