Search Results - "Yueh-Chin Lin"

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer by Ting-En Hsieh, Chang, Edward Yi, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Salahuddin, Sayeef, Hu, Chenming Calvin

“…In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al 2 O 3 /AlN stack gate insulator is presented…”
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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications by Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi

“…A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for…”
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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface by Luong, Tien Tung, Lumbantoruan, Franky, Chen, Yen‐Yu, Ho, Yen‐Teng, Weng, You‐Chen, Lin, Yueh‐Chin, Chang, Shane, Chang, Edward‐Yi

“…One of the epitaxial issues pertaining to the growth of AlGaN/GaN HEMTs on Si is the decrease of parasitic losses that can adversely impact the RF device…”
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GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications by Shih-Chien Liu, Bo-Yuan Chen, Yueh-Chin Lin, Ting-En Hsieh, Huan-Chung Wang, Chang, Edward Yi

“…A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover…”
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Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications by Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi

“…Herein, the AlGaN/GaN high‐electron‐mobility transistors (HEMTs) on silicon substrates using thick copper‐metallized interconnects with Pt diffusion barrier…”
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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications by Lee, Ming-Wen, Chuang, Cheng-Wei, Gamiz, Francisco, Chang, Edward-Yi, Lin, Yueh-Chin

“…In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) "fabricated to improve device radio frequency (RF)…”
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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications by Wang, Chun, Chen, Yu-Chiao, Hsu, Heng-Tung, Tsao, Yi-Fan, Lin, Yueh-Chin, Dee, Chang-Fu, Chang, Edward-Yi

“…In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of…”
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A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band by Lee, Ping-Hsun, Lin, Yueh-Chin, Hsu, Heng-Tung, Tsao, Yi-Fan, Dee, Chang-Fu, Su, Pin, Chang, Edward Yi

“…In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process…”
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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications by Lee, Ming-Wen, Lin, Yueh-Chin, Hsu, Heng-Tung, Gamiz, Francisco, Chang, Edward-Yi

“…In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band…”
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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer by Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu

“…An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first…”
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Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications by Tseng, Howie, Lin, Yueh-Chin, Cheng, Chieh, Chen, Po-Wei, Hsu, Heng-Tung, Tsao, Yi-Fan, Chang, Edward Yi

“…In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the…”
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Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application by Lee, Ping-Hsun, Lin, Yueh-Chin, Hsu, Heng-Tung, Yu, Cheng-Hsien, Tsao, Yi-Fan, Su, Pin, Chang, Edward Yi

“…In this research, <inline-formula> <tex-math notation="LaTeX">\Gamma </tex-math></inline-formula>-gated AlGaN/GaN HEMTs with different layout designs and…”
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Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications by Lee, Ming-Wen, Lin, Yueh-Chin, Chang, Po-Sheng, Tsao, Yi-Fan, Hsu, Heng-Tung, Dee, Chang-Fu, Chang, Edward Yi

“…This study reports AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated by the Stepper Lithography on a 4-inch wafer for Ka-Band applications. Small…”
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Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment by Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi

“…We report a notable improvement in performance, electron transport, and reliability of HfO 2 /In 0.53 Ga 0.47 As nMOSFETs using a plasma-enhanced atomic layer…”
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Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation by Wu, Chia-Hsun, Han, Ping-Cheng, Luc, Quang Ho, Hsu, Ching-Yi, Hsieh, Ting-En, Wang, Huan-Chung, Lin, Yen-Ku, Chang, Po-Chun, Lin, Yueh-Chin, Chang, Edward Yi

“…A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion…”
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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications by Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

“…An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La 2 O 3 /SiO 2 gate insulator is…”
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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants by Wang, Huan-Chung, Hsieh, Ting-En, Lin, Yueh-Chin, Luc, Quang Ho, Liu, Shih-Chien, Wu, Chia-Hsun, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

“…We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al 2 O 3…”
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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment by Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi

“…In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH 3 post remote-plasma (PRP) treatment onto InGaAs…”
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InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D by Chang, Po-Chun, Hsiao, Chih-Jen, Lumbantoruan, Franky Juanda, Wu, Chia-Hsun, Lin, Yen-Ku, Lin, Yueh-Chin, Sze, Simon M., Chang, Edward Yi

“…In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with <inline-formula> <tex-math…”
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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications by Yao, Jing-Neng, Lin, Yueh-Chin, Hsu, Heng-Tung, Yang, Kai-Chun, Hsu, Hisang-Hua, Sze, Simon M., Chang, Edward Yi

“…In this paper, a 100-nm gate length InAs high electron mobility transistor (HEMT) with non-alloyed Ti/Pt/Au ohmic contacts and mesa sidewall channel etch was…”
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