RF plasma treatment of shallow ion-implanted layers of germanium

RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge implanted by BF2+ ions requires higher RTA temper...

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Bibliographic Details
Published in:	Materials science in semiconductor processing Vol. 42; pp. 204 - 209
Main Authors:	Okholin, P.N., Glotov, V.I., Nazarov, A.N., Yuchymchuk, V.O., Kladko, V.P., Kryvyi, S.B., Lytvyn, P.M., Tiagulskyi, S.I., Lysenko, V.S., Shayesteh, M., Duffy, R.
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-02-2016
Subjects:	Implanted germanium Plasma annealing Raman spectroscopy Rapid thermal annealing X-ray diffraction X-ray diffraction Plasma annealing Rapid thermal annealing Raman spectroscopy Implanted germanium
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Summary:	RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge implanted by BF2+ ions requires higher RTA temperatures and power density of RFPA as compared to p-Ge implanted by P+ ions with the same dose. The RFPA has been performed at considerably lower temperatures than RTA and resulted in the formation of a sharp interface between the implanted and underlying Ge layers both for BF2+ ion implantation and P+ ions implantation.
ISSN:	1369-8001 1873-4081
DOI:	10.1016/j.mssp.2015.08.028