Search Results - "Yu, Zhaoan"
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Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging
Published in Advanced science (01-10-2021)“…The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind…”
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Schottky Barrier Rectifier Based on (100) \beta -Ga2O3 and its DC and AC Characteristics
Published in IEEE electron device letters (01-04-2018)“…A Schottky barrier rectifier was fabricated with a (100)-oriented <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3…”
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Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation
Published in Applied physics letters (02-03-2015)“…In this letter, the impact of stress time of pulse program operation on the resistance uniformity and endurance of resistive random access memory (RRAM) is…”
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A bioinspired configurable cochlea based on memristors
Published in Frontiers in neuroscience (03-10-2022)“…Cochleas are the basis for biology to process and recognize speech information, emulating which with electronic devices helps us construct high-efficient…”
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Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm
Published in Advanced electronic materials (01-05-2024)“…In this work, a machine learning‐assisted prediction model is proposed to analyze the reliability issues in the 28 nm resistive random access memory (RRAM)…”
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M6A‐mediated upregulation of lncRNA TUG1 in liver cancer cells regulates the antitumor response of CD8+ T cells and phagocytosis of macrophages
Published in Advanced science (01-09-2024)“…Tumor immune evasion relies on the crosstalk between tumor cells and adaptive/innate immune cells. Immune checkpoints play critical roles in the crosstalk, and…”
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The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory
Published in IEEE electron device letters (01-05-2018)“…Read error caused by resistance change or fluctuation occurred in read operation is a critical issue of resistive random access memory (RRAM) and needs to be…”
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Hardware Implementation of Next Generation Reservoir Computing with RRAM‐Based Hybrid Digital‐Analog System
Published in Advanced intelligent systems (01-10-2024)“…Reservoir computing (RC) possesses a simple architecture and high energy efficiency for time‐series data analysis through machine learning algorithms. To date,…”
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A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured With the Width-Adjusting Pulse Operation Method
Published in IEEE electron device letters (01-12-2015)“…The correlation between the set time (t set ) and the initial off-state resistance (R OFF ) statistics for a Ti/ZrO 2 /Pt bipolar resistive random access…”
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10
GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC-DC Converter
Published in IEEE journal of the Electron Devices Society (2022)“…β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and…”
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Effect of high temperature annealing on the performance of MANOS charge trapping memory
Published in Science China. Technological sciences (01-04-2012)“…We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors…”
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8-Layers 3D vertical RRAM with excellent scalability towards storage class memory applications
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01-12-2017)“…For the first time, we experimentally demonstrated a bit cost scalable (BiCS) 8-layer 3D vertical RRAM with ultimate scalability. The design of self-selective…”
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Conference Proceeding -
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A low power single ended input differential output low noise amplifier for L1/L2 band
Published in 2010 IEEE International Symposium on Circuits and Systems (ISCAS) (01-05-2010)“…A 1.2~1.6 GHz low power single-ended input to differential output low noise amplifier for Global Navigation Satellite System (GNSS, such as GPS, Galileo, China…”
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Conference Proceeding -
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BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01-12-2017)“…In this work, we demonstrated a low cost, BEOL based embedded RRAM technology by adding only one extra mask on standard 28 nm logic platform. Satisfactory…”
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Conference Proceeding -
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Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier
Published in IEEE transactions on electron devices (01-03-2023)“…Superior performance [Formula Omitted]-gallium oxide ([Formula Omitted]-Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A…”
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Fast Switching \beta -Ga2O3 Power MOSFET With a Trench-Gate Structure
Published in IEEE electron device letters (01-09-2019)“…In this letter, trench-gate metal-oxide-semiconductor field-effect transistors on (010) <inline-formula> <tex-math notation="LaTeX">\beta…”
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A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory
Published in IEEE transactions on electron devices (01-10-2021)“…In this work, we present a four-transistor-two-resistor (4T2R) ternary content addressable memory (TCAM) bit cell based on the resistive memory (RRAM),…”
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Superior Performance \beta -Ga \text O } Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft-Walton Voltage Multiplier
Published in IEEE transactions on electron devices (09-02-2023)“…Superior performance <inline-formula> <tex-math notation="LaTeX">\beta</tex-math> </inline-formula>-gallium oxide (<inline-formula> <tex-math…”
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Fast DNA sequencing via transverse differential conductance
Published in 2010 International Conference on Simulation of Semiconductor Processes and Devices (01-09-2010)“…We propose using characteristic transverse differential conductance for solid-state nanopore-based DNA sequencing and have explored this idea by performing…”
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Conference Proceeding