Search Results - "Yu, Yangtong"
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Enhancement-Mode \beta -Ga2O3 Metal-Oxide-Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
Published in IEEE electron device letters (01-05-2019)“…An enhancement-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 metal-oxide-semiconductor field-effect solar-blind…”
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Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current
Published in IEEE electron device letters (01-03-2021)“…This work reports a <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 double-barrier Schottky barrier diode (DBSBD) with…”
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Fast Switching \beta -Ga2O3 Power MOSFET With a Trench-Gate Structure
Published in IEEE electron device letters (01-09-2019)“…In this letter, trench-gate metal-oxide-semiconductor field-effect transistors on (010) <inline-formula> <tex-math notation="LaTeX">\beta…”
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Balancing the Transmittance and Carrier‐Collection Ability of Ag Nanowire Networks for High‐Performance Self‐Powered Ga2O3 Schottky Photodiode
Published in Advanced optical materials (01-08-2021)“…Self‐powered solar‐blind photodiodes with convenient operation, easy fabrication, and weak‐light sensitivity, are highly desired in environmental monitoring…”
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5
Double-Barrier β-Ga 2 O 3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current
Published in IEEE electron device letters (01-03-2021)Get full text
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Enhancement-Mode [Formula Omitted]-Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
Published in IEEE electron device letters (01-01-2019)“…An enhancement-mode [Formula Omitted]-Ga2O3 metal–oxide–semiconductor field-effect solar-blind phototransistor on Si-doped homoepitaxial film grown by…”
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Fast Switching $\beta$ -Ga 2 O 3 Power MOSFET With a Trench-Gate Structure
Published in IEEE electron device letters (01-09-2019)Get full text
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Source-Field-Plated \beta -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2
Published in IEEE electron device letters (01-01-2019)“…In this letter, source-field-plated <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs are fabricated on Si-doped…”
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Source-Field-Plated [Formula Omitted]-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2
Published in IEEE electron device letters (01-01-2019)“…In this letter, source-field-plated [Formula Omitted]-Ga2O3 MOSFETs are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating [Formula…”
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Fast Switching [Formula Omitted]-Ga2O3 Power MOSFET With a Trench-Gate Structure
Published in IEEE electron device letters (01-01-2019)“…In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) [Formula Omitted]-Ga2O3 epitaxial layer are fabricated. Enhancement…”
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Journal Article -
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Balancing the Transmittance and Carrier‐Collection Ability of Ag Nanowire Networks for High‐Performance Self‐Powered Ga 2 O 3 Schottky Photodiode
Published in Advanced optical materials (01-08-2021)“…Self‐powered solar‐blind photodiodes with convenient operation, easy fabrication, and weak‐light sensitivity, are highly desired in environmental monitoring…”
Get full text
Journal Article