Search Results - "Yu, Hyeongwoo"
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Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory
Published in Electronic materials letters (01-03-2014)“…In this report, we employ an Al-doped ZnO (AZO) layer as a resistive switching layer for transparent resistive switching random access memory devices. An…”
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High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors
Published in Applied physics. A, Materials science & processing (01-09-2013)“…We investigated the resistive switching behaviors of the metal–copper oxide–metal devices with the enhanced capability in terms of high speed and multi-bit…”
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Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes
Published in Journal of nanoscience and nanotechnology (01-05-2013)“…The improvement of the optical output power of GaN-based light emitting diodes (LEDs) was achieved by employing nano-sized flat-top hexagonal ZnO rods. ZnO…”
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