Search Results - "Yu, Hye Ri"

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  1. 1

    Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications by Jang, Jun Tae, Ko, Daehyun, Ahn, Geumho, Yu, Hye Ri, Jung, Haesun, Kim, Yeon Soo, Yoon, Chansoo, Lee, Sangik, Park, Bae Ho, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan

    Published in Solid-state electronics (01-02-2018)
    “…•Spike time-dependent plasticity (STDP) in the Pt/LaAlO3/Nb-doped SrTiO3 memristor.•The effect of oxygen content in the LaAlO3 layer on synaptic behavior.•The…”
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    Journal Article
  2. 2

    Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multilayered Molybdenum Disulfide Field‐Effect Transistors by Choi, Sungju, Seo, Seung Gi, Yu, Hye Ri, Kim, Seung Yeob, Kim, Dae Hwan, Jin, Sung Hun

    “…Herein, exfoliated, multilayered molybdenum disulfide (MoS2) (m‐MoS2) field‐effect transistors (FETs) are implemented with bilayered SiNx/SiOx gate dielectrics…”
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    Journal Article
  3. 3

    Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors by Yu, Hye Ri, Jang, Jun Tae, Ko, Daehyun, Choi, Sungju, Ahn, Geumho, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan

    Published in IEEE transactions on electron devices (01-08-2018)
    “…Degradation on the current saturation of the output characteristics in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors with the bottom-gate…”
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    Journal Article
  4. 4

    Semiconducting Carbon Nanotube Schottky Diode and Integrated Circuit Applications by Yongwoo Lee, Bongsik Choi, Jinsu Yoon, Jinhee Park, Yeamin Kim, Han Bin Yoo, Jun Tae Jang, Geumho Ahn, Hye Ri Yu, Hyo-Jin Kim, Dae Hwan Kim, Dong Myong Kim, Sungho Kim, Sung-Jin Choi

    “…A new type of a Schottky diode based on a 99% semiconducting carbon nanotube (CNT) percolated network is demonstrated. The fabricated CNT Schottky diode shows…”
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    Conference Proceeding
  5. 5

    Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices by Jang, Jun Tae, Ko, Daehyun, Choi, Sungju, Kang, Hara, Kim, Jae-Young, Yu, Hye Ri, Ahn, Geumho, Jung, Haesun, Rhee, Jihyun, Lee, Heesung, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan

    Published in Solid-state electronics (01-02-2018)
    “…•Effect of structure and oxygen flow rate on photo-response in IGZO-based photodetector.•Decomposition of persistent photoconductivity based on extracted…”
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    Journal Article
  6. 6

    The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors by Jang, Jun Tae, Kang, Hara, Yu, Hye Ri, Kim, Eok Su, Son, Kyoung Seok, Cho, Seong-Ho, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan

    Published in IEEE electron device letters (01-01-2019)
    “…The influence of anion composition on the electrical characteristics of amorphous zinc-oxynitride thin-film transitors (TFTs) is investigated and…”
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    Journal Article
  7. 7

    Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors by Jung, Haesun, Choi, Sungju, Jang, Jun Tae, Yoon, Jinsu, Lee, Juhee, Lee, Yongwoo, Rhee, Jihyun, Ahn, Geumho, Yu, Hye Ri, Kim, Dong Myong, Choi, Sung-Jin, Kim, Dae Hwan

    Published in Solid-state electronics (01-02-2018)
    “…•We proposed a bias stress induced instability model for CNT FETs in air/vacuum.•The VT shift is composed of ad/desorption of OH−, electron/hole trapping, and…”
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    Journal Article
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