Search Results - "Yu, Hye Ri"
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Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications
Published in Solid-state electronics (01-02-2018)“…•Spike time-dependent plasticity (STDP) in the Pt/LaAlO3/Nb-doped SrTiO3 memristor.•The effect of oxygen content in the LaAlO3 layer on synaptic behavior.•The…”
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Hydrophobic Polymer Encapsulation Effects on Subgap Density of States in Multilayered Molybdenum Disulfide Field‐Effect Transistors
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-01-2020)“…Herein, exfoliated, multilayered molybdenum disulfide (MoS2) (m‐MoS2) field‐effect transistors (FETs) are implemented with bilayered SiNx/SiOx gate dielectrics…”
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Degradation on the Current Saturation of Output Characteristics in Amorphous InGaZnO Thin-Film Transistors
Published in IEEE transactions on electron devices (01-08-2018)“…Degradation on the current saturation of the output characteristics in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors with the bottom-gate…”
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Semiconducting Carbon Nanotube Schottky Diode and Integrated Circuit Applications
Published in 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) (01-07-2018)“…A new type of a Schottky diode based on a 99% semiconducting carbon nanotube (CNT) percolated network is demonstrated. The fabricated CNT Schottky diode shows…”
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Conference Proceeding -
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Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices
Published in Solid-state electronics (01-02-2018)“…•Effect of structure and oxygen flow rate on photo-response in IGZO-based photodetector.•Decomposition of persistent photoconductivity based on extracted…”
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Journal Article -
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The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film Transistors
Published in IEEE electron device letters (01-01-2019)“…The influence of anion composition on the electrical characteristics of amorphous zinc-oxynitride thin-film transitors (TFTs) is investigated and…”
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Journal Article -
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Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Published in Solid-state electronics (01-02-2018)“…•We proposed a bias stress induced instability model for CNT FETs in air/vacuum.•The VT shift is composed of ad/desorption of OH−, electron/hole trapping, and…”
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19‐3: Late-News Paper: Universal Method to Determine the Dynamic NBIS‐ and PBS‐induced Instabilities on Self‐aligned Coplanar InGaZnO Thin‐film Transistors
Published in SID International Symposium Digest of technical papers (01-05-2018)“…The method for dynamically calculating the NBIS‐ and PBS‐induced ΔVT's is proposed based on experimentally extracted density‐of‐states and is demonstrated in…”
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Journal Article