Search Results - "Youngboo Moon"
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1
Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)
Published in Journal of science. Advanced materials and devices (01-09-2024)“…In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide…”
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2
Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
Published in Applied physics letters (16-01-2012)“…We report the experimental determination of current spill-over in InGaN/GaN blue light emitting diodes by measuring the change in the forward current generated…”
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3
Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes
Published in Applied physics letters (28-12-2009)“…Strong photovoltaic effects on photoluminescence (PL) spectra in InGaN/GaN blue light emitting diodes were investigated. Due to severe carrier escape from…”
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4
The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers
Published in Journal of crystal growth (15-12-2008)“…We report on the effects of both a low-mole InGaN (LMI) structure and an InGaN/GaN strained layer superlattices (SLSs) structure as a buffer layer on the…”
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5
Effects of As/P exchange reaction on the formation of InAs/InP quantum dots
Published in Applied physics letters (05-04-1999)“…InAs self-assembled quantum dots (SAQDs) were grown on InP at various temperatures and V/III ratios by metalorganic chemical vapor deposition. The density,…”
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6
Effects of PH3/H2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells
Published in Journal of crystal growth (2000)Get full text
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7
Effects of prestrained layers on piezoelectric field and indium incorporation in InGaN/GaN quantum wells
Published in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference (01-05-2009)“…We investigated the effects of prestrained layers on piezoelectric fields and indium incorporation in blue-emitting InGaN/GaN quantum wells by using…”
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Conference Proceeding -
8
Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
Published in Journal of electronic materials (01-05-2015)“…Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial…”
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9
Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape
Published in Optical materials (01-10-2021)“…Accurately predicting the peak wavelength and intensity of the electroluminescence spectrum through the photoluminescence method which can be measured without…”
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10
Effects of N +-implanted sapphire (0 0 0 1) substrate on GaN epilayer
Published in Journal of crystal growth (01-03-2002)“…We have investigated the effects of N +-implanted sapphire (0 0 0 1) substrate on a GaN epilayer grown by metal–organic chemical vapor deposition (MOCVD). As a…”
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11
Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties
Published in Journal of crystal growth (15-11-2015)“…We propose a new GaN growth scheme using a cavity engineered sapphire substrate (CES), in which a patterned cavity array was formed on the sapphire surface…”
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12
Observation of two independent sources for arsenic carryover
Published in Journal of crystal growth (2000)“…The two independent As carryover processes were observed by photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) from the same InAs x P 1− x…”
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13
Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy
Published in Journal of Raman spectroscopy (01-11-2021)“…Ex situ depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) was investigated through surface‐plasmon‐enhanced…”
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14
Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-09-1999)“…We present an in situ study of P desorption and adsorption on the (001) InP surface using surface photoabsorption (SPA). The SPA spectra show three peaks at…”
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15
Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots
Published in Journal of electronic materials (01-05-2000)“…We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under…”
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16
Experimental separation of injection and radiative efficiencies in InGaN/GaN light emitting diodes
Published in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) (01-08-2015)“…The carrier injection efficiency (CIE) and the radiative efficiency (RE) are experimentally determined in order to clarify the origin of the efficiency droop…”
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Conference Proceeding -
17
Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
Published in Japanese Journal of Applied Physics (2003)“…The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by MOCVD were investigated. Intentionally…”
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18
Large-Area MOCVD Growth of Ga^sub 2^O3 in a Rotating Disc Reactor
Published in Journal of electronic materials (01-05-2015)“…(ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image) Issue Title: 2014 Electronic Materials Conference. Guest Editors: Angel…”
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19
Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
Published in Applied physics letters (13-02-2012)“…We experimentally investigated well-to-well non-uniformity in InGaN/GaN multiple quantum well (MQW) structures by using capacitance-voltage measurements with…”
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Journal Article -
20
Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
Published in Japanese Journal of Applied Physics (01-09-1999)“…We present an in situ surface photoabsorption (SPA) study on surface structures of (001) InP surfaces. Conventional subtraction spectra of SPA on (001) InP…”
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