Search Results - "Youngboo Moon"

Refine Results
  1. 1

    Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs) by Kim, Young Jo, Moon, Youngboo, Moon, Jeong Hyun, Kim, Hyoung Woo, Bahng, Wook, Park, Hongsik, Yoon, Young Jun, Seo, Jae Hwa

    “…In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide…”
    Get full text
    Journal Article
  2. 2

    Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes by Ahn, Byung-Jun, Kim, Tae-Soo, Dong, Yanqun, Hong, Moon-Taek, Song, Jung-Hoon, Song, Jae-Ho, Yuh, Hwan-Kuk, Choi, Sung-Chul, Bae, Duk-Kyu, Moon, Youngboo

    Published in Applied physics letters (16-01-2012)
    “…We report the experimental determination of current spill-over in InGaN/GaN blue light emitting diodes by measuring the change in the forward current generated…”
    Get full text
    Journal Article
  3. 3

    Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes by Song, Jae-Ho, Kim, Ho-Jong, Ahn, Byung-Jun, Dong, Yanqun, Hong, Sayong, Song, Jung-Hoon, Moon, Youngboo, Yuh, Hwan-Kuk, Choi, Sung-Chul, Shee, Sangkee

    Published in Applied physics letters (28-12-2009)
    “…Strong photovoltaic effects on photoluminescence (PL) spectra in InGaN/GaN blue light emitting diodes were investigated. Due to severe carrier escape from…”
    Get full text
    Journal Article
  4. 4

    The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers by Leem, Shi Jong, Shin, Young Chul, Kim, Kyoung Chan, Kim, Eun Hong, Sung, Yun Mo, Moon, Youngboo, Hwang, Sung Min, Kim, Tae Geun

    Published in Journal of crystal growth (15-12-2008)
    “…We report on the effects of both a low-mole InGaN (LMI) structure and an InGaN/GaN strained layer superlattices (SLSs) structure as a buffer layer on the…”
    Get full text
    Journal Article
  5. 5

    Effects of As/P exchange reaction on the formation of InAs/InP quantum dots by Yoon, Sukho, Moon, Youngboo, Lee, Tae-Wan, Yoon, Euijoon, Kim, Young Dong

    Published in Applied physics letters (05-04-1999)
    “…InAs self-assembled quantum dots (SAQDs) were grown on InP at various temperatures and V/III ratios by metalorganic chemical vapor deposition. The density,…”
    Get full text
    Journal Article
  6. 6
  7. 7

    Effects of prestrained layers on piezoelectric field and indium incorporation in InGaN/GaN quantum wells by Jae-Ho Song, Ho-Jong Kim, Byung-Jun An, Jung-Hoon Song, Youngboo Moon, Hwan-Kuk Yuh, Sung-Chul Choi

    “…We investigated the effects of prestrained layers on piezoelectric fields and indium incorporation in blue-emitting InGaN/GaN quantum wells by using…”
    Get full text
    Conference Proceeding
  8. 8

    Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor by Sbrockey, Nick M., Salagaj, Thomas, Coleman, Elane, Tompa, Gary S., Moon, Youngboo, Kim, Myung Sik

    Published in Journal of electronic materials (01-05-2015)
    “…Gallium oxide is a wide-bandgap semiconductor material which is being developed for a range of electronic and electrooptic device applications. Commercial…”
    Get full text
    Journal Article
  9. 9

    Correlation between photoluminescence and electroluminescence in GaN-related micro light emitting diodes: Effects of leakage current, applied bias, incident light absorption and carrier escape by Kim, Kyuheon, Jung, Gunwoo, Kim, Jaesun, Sung, Yujin, Kang, Jaesang, Lee, Wook-Jae, Moon, Youngboo, Jeong, Tak, Song, Jung-Hoon

    Published in Optical materials (01-10-2021)
    “…Accurately predicting the peak wavelength and intensity of the electroluminescence spectrum through the photoluminescence method which can be measured without…”
    Get full text
    Journal Article
  10. 10

    Effects of N +-implanted sapphire (0 0 0 1) substrate on GaN epilayer by Cho, Yong Suk, Koh, Eui Kwan, Park, Young Ju, Koh, Dongwan, Kim, Eun Kyu, Moon, Youngboo, Leem, Shi-Jong, Kim, Gyeungho, Byun, Dongjin

    Published in Journal of crystal growth (01-03-2002)
    “…We have investigated the effects of N +-implanted sapphire (0 0 0 1) substrate on a GaN epilayer grown by metal–organic chemical vapor deposition (MOCVD). As a…”
    Get full text
    Journal Article
  11. 11

    Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties by Jang, Jeonghwan, Moon, Daeyoung, Lee, Hyo-Jeong, Lee, Donghyun, Choi, Daehan, Bae, Dukkyu, Yuh, Hwankuk, Moon, Youngboo, Park, Yongjo, Yoon, Euijoon

    Published in Journal of crystal growth (15-11-2015)
    “…We propose a new GaN growth scheme using a cavity engineered sapphire substrate (CES), in which a patterned cavity array was formed on the sapphire surface…”
    Get full text
    Journal Article
  12. 12

    Observation of two independent sources for arsenic carryover by Moon, Youngboo, Lee, Tae-Wan, Yoon, Sukho, Yoo, Kyeongran, Yoon, Euijoon

    Published in Journal of crystal growth (2000)
    “…The two independent As carryover processes were observed by photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD) from the same InAs x P 1− x…”
    Get full text
    Journal Article
  13. 13

    Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy by Jung, Gunwoo, Kim, Kyuheon, Kim, Jaesun, Sung, Yujin, Kang, Jae‐Sang, Moon, Youngboo, Lim, Seung‐Young, Song, Jung‐Hoon

    Published in Journal of Raman spectroscopy (01-11-2021)
    “…Ex situ depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) was investigated through surface‐plasmon‐enhanced…”
    Get full text
    Journal Article
  14. 14

    Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption by Lee, Tae-Wan, Hwang, Heedon, Moon, Youngboo, Yoon, Euijoon, Kim, Young Dong

    “…We present an in situ study of P desorption and adsorption on the (001) InP surface using surface photoabsorption (SPA). The SPA spectra show three peaks at…”
    Get full text
    Journal Article
  15. 15

    Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots by Yoon, Sukho, Moon, Youngboo, Lee, Tae-Wan, Hwang, Heedon, Yoon, Euijoon, Kim, Young Dong, Lee, Uk Hyun, Lee, Donghan, Kim, Hong-Seung, Lee, Jeong Yong

    Published in Journal of electronic materials (01-05-2000)
    “…We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under…”
    Get full text
    Journal Article
  16. 16

    Experimental separation of injection and radiative efficiencies in InGaN/GaN light emitting diodes by Nan-Cho Oh, Tae-Soo Kim, Youngboo Moon, Jung-Hoon Song

    “…The carrier injection efficiency (CIE) and the radiative efficiency (RE) are experimentally determined in order to clarify the origin of the efficiency droop…”
    Get full text
    Conference Proceeding
  17. 17

    Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers by Kim, Jaekyun, Park, Young Ju, Byun, Dongjin, Jhin, Junggeun, Kang, Mingu, Koh, Eui Kwan, Moon, Youngboo, Min, Suk-Ki

    “…The structural and optical properties of GaN epilayers grown on intentionally strained sapphire (0001) substrates by MOCVD were investigated. Intentionally…”
    Get full text
    Journal Article
  18. 18

    Large-Area MOCVD Growth of Ga^sub 2^O3 in a Rotating Disc Reactor by Sbrockey, Nick M, Salagaj, Thomas, Coleman, Elane, Tompa, Gary S, Moon, Youngboo, Kim, Myung Sik

    Published in Journal of electronic materials (01-05-2015)
    “…(ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image) Issue Title: 2014 Electronic Materials Conference. Guest Editors: Angel…”
    Get full text
    Journal Article
  19. 19

    Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination by Kim, Tae-Soo, Ahn, Byung-Jun, Dong, Yanqun, Park, Ki-Nam, Lee, Jin-Gyu, Moon, Youngboo, Yuh, Hwan-Kuk, Choi, Sung-Chul, Lee, Jae-Hak, Hong, Soon-Ku, Song, Jung-Hoon

    Published in Applied physics letters (13-02-2012)
    “…We experimentally investigated well-to-well non-uniformity in InGaN/GaN multiple quantum well (MQW) structures by using capacitance-voltage measurements with…”
    Get full text
    Journal Article
  20. 20

    Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces by Kim, Young-Dong, Lee, Tae-Wan, Hwang, Heedon, Moon, Youngboo, Yoon, Euijoon, Nakamura, Fumihiko

    Published in Japanese Journal of Applied Physics (01-09-1999)
    “…We present an in situ surface photoabsorption (SPA) study on surface structures of (001) InP surfaces. Conventional subtraction spectra of SPA on (001) InP…”
    Get full text
    Journal Article