Search Results - "Young-shil Kim"
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High breakdown voltage AlGaN/GaN MOS-HEMTs-on-Si with atomic-layer-deposited Al2O3 gate insulator
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-05-2013)“…We have proposed and fabricated AlGaN/GaN MOSHEMTs employing an atomic-layer-deposited (ALD) Al 2 O 3 gate insulator. A 10-nmm Al 2 O 3 served as passivation…”
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Conference Proceeding
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High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We proposed and fabricated AlGaN/GaN HEMT with high stable reverse blocking characteristics employing fluoride plasma treatment using CF 4 gas. The plasma…”
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Conference Proceeding -
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Effect of oxygen annealing temperature on AlGaN/GaN HEMTs
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 830 V…”
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Conference Proceeding -
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High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer
Published in Japanese Journal of Applied Physics (01-04-2010)“…We have fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing the proposed surface treatment by the deposition and removal of a SiO 2…”
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Journal Article -
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A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We proposed and fabricated new vertical GaN Schottky barrier diodes (SBDs) employing in-situ metallic gallium (Ga) ohmic contacts which increase the forward…”
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Conference Proceeding -
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High breakdown AlGaN/GaN HEMTs employing double metal structure
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01-06-2012)“…We have proposed and fabricated AlGaN/GaN HEMTs employing a nickel oxide (NiO X ) based double metal structure which showed a stable reverse blocking…”
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Conference Proceeding -
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High voltage AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) employing oxygen annealing
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-06-2010)“…The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O 2 ) annealing. This proposed…”
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Conference Proceeding -
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High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01-05-2008)“…The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical…”
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Conference Proceeding -
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AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiOx/Ni/Au Contact
Published in Jpn J Appl Phys (01-09-2012)“…We proposed and fabricated an AlGaN/GaN lateral Schottky barrier diode (SBD) employing nickel oxide (NiO x )-based double metal contacts, which showed a highly…”
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Journal Article -
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Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
Published in Solid-state electronics (01-04-2010)“…We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device…”
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11
New AlGaN/GaN HEMTs employing both a floating gate and a field plate
Published in Physica scripta (01-11-2010)Get full text
Journal Article -
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1-kV AlGaN/GaN schottky barrier diode on a Si substrate by oxidizing the Schottky contact
Published in Journal of the Korean Physical Society (01-05-2012)“…High-voltage AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated on Si substrates by oxidizing Ni-based Schottky contacts. Oxidation successfully…”
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Journal Article -
13
Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-05-2013)“…Normally-off AlGaN/GaN MOS HEMTs were successfully fabricated and investigated by simple KOH wet etch and rf-sputtered HfO 2 as a gate insulator. The proposed…”
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Conference Proceeding -
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3.2 kV AlGaN/GaN MIS-HEMTs employing RF sputtered Ga2O3 films
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01-06-2012)“…AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) employing rf sputtered Ga 2 O 3 have been proposed and fabricated. A…”
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Conference Proceeding -
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Channel modulated AlGaN/GaN HEMTs employing fluoride plasma treatment
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical…”
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Conference Proceeding -
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AlGaN/GaN high-electron-mobility transistor(HEMT) employing Schottky contact on the unetched region and the silicon dioxide passivation
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO 2 passivation using an…”
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Conference Proceeding -
17
New voltage sensing terminal of the IGBT for the short-circuit protection with suppressed floating effect by employing the internal PMOS
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We have proposed a new floating p-well voltage reset scheme for reliable and fast discharging voltage sensing terminal by employing the negative gate bias,…”
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Conference Proceeding -
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The field modulation effect of fluoride plasma treatment on blocking characteristics of AlGaN/GaN HEMT
Published in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01-07-2011)“…We proposed and fabricated AlGaN/GaN HEMTs with highly stable reverse blocking characteristics by employing fluoride plasma treatment using CF 4 gas. The…”
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Conference Proceeding -
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AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiO x /Ni/Au Contact
Published in Japanese Journal of Applied Physics (01-09-2012)“…We proposed and fabricated an AlGaN/GaN lateral Schottky barrier diode (SBD) employing nickel oxide (NiO x )-based double metal contacts, which showed a highly…”
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Journal Article -
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AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing NiO x /Ni/Au Contact
Published in Japanese Journal of Applied Physics (01-09-2012)Get full text
Journal Article