Search Results - "Yoshitake, Tsuyoshi"
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Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding
Published in AIP advances (01-10-2021)“…Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga2O3 layers were fabricated at a low temperature using a direct-bonding…”
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2
Near- and far-field Raman spectroscopic studies of nanodiamond composite films deposited by coaxial arc plasma
Published in Applied physics letters (27-01-2020)“…Raman spectroscopic studies on nanodiamond composite (NDC) films, comprising nano-sized diamond grains and an amorphous carbon (a-C) matrix, deposited by…”
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3
Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates
Published in Japanese Journal of Applied Physics (01-05-2021)“…In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer…”
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4
Application of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films for ultraviolet detection
Published in Applied physics. A, Materials science & processing (01-03-2017)“…Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) films were grown by coaxial arc plasma deposition in the ambient of…”
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5
Monothetic Analysis and Response Surface Methodology Optimization of Calcium Alginate Microcapsules Characteristics
Published in Polymers (12-02-2022)“…Owing to bio-polymer's low-cost, environmental friendliness and mechanically stable nature, calcium alginate microcapsules have attracted much interest for…”
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6
Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes
Published in Physica scripta (01-09-2020)“…Heterojunction diodes are constructed by growing n-type (nitrogen-doped) ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite…”
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7
Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes
Published in Physica status solidi. A, Applications and materials science (01-10-2022)“…Pseudovertical Schottky barrier diodes (SBDs) are fabricated on a single‐crystal diamond substrate. Herein, the structural and electrical influence of…”
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8
Temperature-dependent current-voltage characteristics and ultraviolet light detection of heterojunction diodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films and p-type silicon substrates
Published in Japanese Journal of Applied Physics (01-07-2017)“…Heterojunction diodes comprising poorly (1 at. %) nitrogen-doped n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films…”
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9
Corrosion‐Resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon Electrodes
Published in Physica status solidi. A, Applications and materials science (01-02-2023)“…The realization of diamond‐based advanced devices is interrelated with the fabrication of practical ohmic contacts. Contrary to boron‐doped, the…”
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10
Effects of substrate temperature and intermediate layer on adhesion, structural and mechanical properties of coaxial arc plasma deposition grown nanodiamond composite films on Si substrates
Published in Surface & coatings technology (15-07-2021)“…Low-temperature fabrication of nanodiamond films on untreated silicon substrates, which are preferred substrates and widely employed in industry, can extend…”
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11
Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
Published in Thin solid films (01-09-2020)“…•p-Si/i-Si/n-type β-FeSi2 junctions built by facing target direct-current sputtering.•Dark current density-voltage (J-V) reveals a rectifying action and…”
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12
Nanocarbon ohmic electrodes fabricated by coaxial arc plasma deposition for phosphorus-doped diamond electronics application
Published in AIP advances (01-08-2022)“…n-Type (phosphorus-doped) diamond is a promising material for diamond-based electronic devices. However, realizing good ohmic contacts for phosphorus-doped…”
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13
Optical and structural characterization of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films deposited via coaxial arc plasma
Published in Current applied physics (01-02-2019)“…Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were deposited in the ambient of hydrogen by coaxial arc plasma deposition. The film…”
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14
Characterization and design optimization of heterojunction photodiodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite and p-type Si
Published in Materials science in semiconductor processing (01-11-2018)“…In this paper, we characterize and optimize design of a candidate ultraviolet photodiode based on nitrogen-doped ultrananocrystalline diamond hydrogenated…”
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15
Temperature-Dependent Impedance Spectra of Nitrogen-Doped Ultrananocrystalline Diamond Films Grown on Si Substrates
Published in IEEE access (2021)“…Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous-carbon (UNCD/a-C:H) composite films, grown on Si substrates by the coaxial arc plasma gun,…”
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16
Negative bias effects on deposition and mechanical properties of ultrananocrystalline diamond/amorphous carbon composite films deposited on cemented carbide substrates by coaxial arc plasma
Published in Diamond and related materials (01-06-2019)“…Ultrananocrystalline diamond/amorphous carbon composite (UNCD/a-C) films were deposited on negatively biased cemented carbide (WC-Co) substrates by coaxial arc…”
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17
Laser-Induced Phosphorus-Doped Conductive Layer Formation on Single-Crystal Diamond Surfaces
Published in ACS applied materials & interfaces (23-12-2020)“…A laser-induced doping method was employed to incorporate phosphorus into an insulating monocrystalline diamond at ambient temperature and pressure conditions…”
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18
Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Published in Applied physics. A, Materials science & processing (01-05-2019)“…Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with…”
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19
Defect and field-enhancement characterization through electron-beam-induced current analysis
Published in Applied physics letters (01-05-2017)“…To investigate the effects of defects and field enhancement in diamond power devices, a biased Schottky barrier diode was characterized by…”
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20
Hard coating of ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition
Published in Applied physics. A, Materials science & processing (01-08-2016)“…Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were deposited on cemented carbide containing Co by…”
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