Search Results - "Yoshida, Okio"
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Calculations of Image Lag in Vidicon-Type Camera Tubes. II Image Lag for Moving Object: Dynamic Image Lag
Published in Japanese Journal of Applied Physics (01-09-1971)“…Image lags with delayed timing where the change of target illumination on a particular element occurs at a somewhat delayed time after the passing of the…”
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Calculations of Image Lag in Vidicon-Type Camera Tubes. I. Beam Discharge Lag and Total Image Lag, Including Photoconductive Lag
Published in Japanese Journal of Applied Physics (1971)“…Image lag in vidicon-type camera tubes is analyzed, taking scanning processes with a low-velocity electron beam into consideration. As the beam landing…”
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Measurements of Lags in Vidicons Using GaP Red-Emitting Diodes as a Light Source
Published in Japanese Journal of Applied Physics (01-01-1971)“…A novel apparatus for measuring lags in vidicons using GaP red-emitting diodes as a light source is described. By using GaP diodes, the light source becomes…”
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4
CdTe Resistive Sea for Silicon Vidicon Targets
Published in Japanese Journal of Applied Physics (01-01-1971)Get full text
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Frame Transfer CCD Imager with Transparent Electrodes
Published in Japanese Journal of Applied Physics (01-01-1980)Get full text
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A low driving voltage CCD with single layer electrode structure for area image sensor
Published in IEEE transactions on electron devices (01-11-1997)“…A new single layer electrode two-phase CCD was studied for the purpose of realizing low driving voltage operation in inter-line transfer CCD (IT-CCD) image…”
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Analysis of signal to noise ratio of photoconductive layered solid-state imaging device
Published in IEEE transactions on electron devices (01-01-1995)“…The signal to noise ratio of the photoconductive layered solid-state imaging device (PSID) has been theoretically derived. In this analysis the noise…”
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A random noise reduction method for an amorphous silicon photoconversion layer overlaid CCD imager
Published in IEEE transactions on electron devices (01-10-1997)“…A novel random noise reduction (RNR) method, which can reduce random noise generated in a storage diode (SD), has been proposed and evaluated with a cell test…”
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9
Electric field concentration at electrode edge with decreasing amorphous silicon defect density
Published in Journal of non-crystalline solids (1996)“…Many studies have concentrated on the decrease in a-Si defect density. However, several a-Si image sensors, such as the 2M-pixel charge coupled device (CCD)…”
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Improvement of surface morphology and bulk structure of a-SiC:H films
Published in Journal of non-crystalline solids (01-05-1996)“…The influence of gas flow and H 2 dilution ratio on the bulk and surface properties of a-SiC:H films is discussed. Infrared and electron spin resonance studies…”
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Photoelectric Properties of As 2 Se 3 Layers
Published in Japanese Journal of Applied Physics (01-07-1967)“…The photoelectric properties of As 2 Se 3 evaporated layers were investigated on “sandwich” type photocell. Current-voltage characteristics and persistence of…”
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12
Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition method
Published in Journal of non-crystalline solids (01-05-1996)“…The a-Si:H films prepared by a laminar flow photo-chemical vapor deposition method were investigated. The SiH 2 bond content ( C SiH 2 ) in the a-Si:H film…”
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13
Analysis of photoelectric conversion characteristics under knee control operation for CCD imagers
Published in IEEE transactions on electron devices (01-12-1994)“…A high-light signal suppression operation, knee control operation, was evaluated in order to apply to a STACK-CCD of 2/3-in 2 M-pixel high definition…”
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14
A 2/3-in 2 million pixel STACK-CCD HDTV imager
Published in IEEE journal of solid-state circuits (01-08-1995)“…A 2/3-in optical format 2 M pixel STACK-CCD imager has been developed. The STACK-CCD imager, overlaid with an amorphous silicon photoconversion layer, realizes…”
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15
A single-layer metal-electrode CCD image sensor
Published in Proceedings ISSCC '95 - International Solid-State Circuits Conference (1995)“…A small pixel is required to reduce CCD image sensor chip size for commercial application. However, the shrinkage of pixel size adversely affects such…”
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Conference Proceeding -
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Properties of CdSe-Sb 2 S 3 Vidicon-Type Targets
Published in Japanese Journal of Applied Physics (01-04-1968)Get full text
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A photoelectric conversion-characteristic control method for interline transfer CCD imager
Published in IEEE transactions on electron devices (01-08-1985)“…There are generally two approaches to dynamic range expansion for a solid-state imager. One is output-noise decrease. Another approach is a maximum…”
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Journal Article