Search Results - "Yoshida, Naohito"

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions by Hisaka, Takayuki, Sasaki, Hajime, Nogami, Yoichi, Hosogi, Kenji, Yoshida, Naohito, Villanueva, A.A., del Alamo, Jesus A., Hasegawa, Shigehiko, Asahi, Hajime

“…We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in…”
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Alloyed and Non-Alloyed Ohmic Contacts for AlInAs/ InGaAs High Electron Mobility Transistors by Yoshida, Naohito, Yamamoto, Yoshitsugu, Takano, Hirozou, Sonoda, Takuji, Saburou Takamiya, Saburou Takamiya, Shigeru Mitsui, Shigeru Mitsui

“…AuGe/Ni/Au alloyed and WSi non-alloyed ohmic contacts are investigated for AlInAs/InGaAs high electron mobility transistors (HEMTs). For the alloyed contact, a…”
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Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing by Hayafuji, Norio, Kimura, Tatsuya, Yoshida, Naohito, Kaneno, Nobuaki, Tsugami, Mari, Mizuguchi, Kazuo, Murotani, Toshio, Ibuki, Sumiaki

“…We have studied the effect of thermal cyclic annealing (TCA) on the crystal quality improvement of MOCVD grown InP on GaAs substrates. The crystal quality has…”
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Degradation mechanisms of GaAs PHEMTs in high humidity conditions by Hisaka, Takayuki, Aihara, Yasuki, Nogami, Yoichi, Sasaki, Hajime, Uehara, Yasushi, Yoshida, Naohito, Hayashi, Kazuo

“…We have studied the degradation mechanisms of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under high humidity conditions (85 °C, 85% relative humidity). The…”
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Degradation Mechanism of AlGaAs/InGaAs Power Pseudomorphic High-Electron-Mobility Transistors under Large-Signal Operation by Hisaka, Takayuki, Nogami, Yoichi, Sasaki, Hajime, Yoshida, Naohito, Hayashi, Kazuo, Villanueva, Anita A., Alamo, Jesus A. del

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Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors by Maruno, Shigemitsu, Abe, Yuji, Ozeki, Tatsuo, Nakamoto, Takahiro, Yoshida, Naohito

“…The surface electronic properties of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors were investigated by isothermal capacitance transient…”
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A 2.5-V Low-Reference-Voltage, 2.8-V Low-Collector-Voltage Operation, HBT Power Amplifier for 0.8-0.9-GHz Broadband CDMA Applications by Yamamoto, K., Okamura, A., Matsuzuka, T., Yoshii, Y., Ogawa, N., Nakayama, M., Shimura, T., Yoshida, N.

“…This paper describes circuit design and measurement results of a pure HBT MMIC power amplifier module (PA) operating with a 2.5-V low reference (V ref ) and…”
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70% high efficient C-band 27W hetero-structure FET for space application by Minamide, Hiroaki, Kohno, Masaki, Yoshida, Naohito, Yajima, Kotaro, Mori, Kazutomi, Ogata, Toshikazu, Sonoda, Takuji

“…A highly reliable and 70% highly efficient C-Band 27W internally-matched GaAs FET with a total gate width of 18.9mm x 4 has been developed for space…”
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Overview of recent development of HEMTs in the mm-wave range by Takamiya, Saburo, Yoshida, Naohito, Hayafuji, Norio, Sonoda, Takuji, Mitsui, Shigeru

“…Recent expansion in the demand for high frequency applications requires new transistors with better performance than the MESFETs, especially in the…”
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An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10-Gb/s optical transmission systems by Miyashita, M., Yoshida, N., Kojima, Y., Kitano, T., Higashisaka, N., Nakagawa, J., Takagi, T., Otsubo, M.

“…An optical modulator driver integrated circuit (IC) has been developed for 10-Gb/s optical communication systems. To achieve both high-frequency (HF) operation…”
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Overview of recent developments of HEMTs in the mm-wave range by Takamiya, Saburo, Yoshida, Naohito, Hayafuji, Norio, Sonoda, Takuji, Mitsui, Shigeru

“…High electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) are being developed to realize better MESFETs by utilizing features of…”
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Degradation mechanisms of GaAs PHEMTs under operation in high humidity conditions by Hisaka, Takayuki, Sasaki, Hajime, Nogamni, Yoichi, Hosogi, Kenji, Yoshida, Naohito, Villanueva, A. A., del Alamo, Jesus A., Hasegawa, Shigehiko, Asahi, Hajime

“…We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic highelectron- mobility transistors (PHEMTs) under operation in…”
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Extremely narrow spectral linewidth and low chirping of the MQW-DFB-PPIBH laser diode by Kakimoto, S., Nakajima, Y., Sakakibara, Y., Watanabe, H., Takemoto, A., Yoshida, N.

“…The low threshold current of 9 mA, the high side-mode suppression ratio of more than 45 dB, the extremely narrow spectral linewidth of 1.1 MHz, and the low…”
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Degradation mechanisms of GaAs PHEMTs in high humidity conditions by Hisaka, T., Aihara, Y., Nogami, Y., Sasaki, H., Uehara, Y., Yoshida, N., Hayashi, K.

“…We have studied the degradation mechanism of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under high humidity conditions. The samples show a decrease in maximum…”
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High output power and high temperature operation of 1.5 mu m DFB-PPIBH laser diodes by Kakimoto, S., Nakajima, Y., Takemoto, A., Yoshida, N., Namizaki, H., Susaki, W.

“…Highly efficient 1.5- mu m distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed…”
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A W-band monolithic low noise AlGaAs/InGaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package with waveguide interface by Itoh, Y., Nakayama, M., Nakahara, K., Takagi, T., Sakura, T., Yoshida, N., Katoh, T., Kashiwa, T., Ito, Y.

“…A W-band monolithic low noise AlGaAs/InGaAs/GaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package has been developed for use in…”
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Degradation mechanism of PHEMT under large signal operation by Hisaka, T., Nogami, Y., Sasaki, H., Hasuike, A., Yoshida, N., Hayashi, K., Sonoda, T., Villanueva, A.A., del Alamo, J.A.

“…We have studied the degradation mechanism of AlGaAs/InGaAs pseudomorphic HEMTs (PHEMTs) under large signal operation. The output power of the PHEMT is degraded…”
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