Search Results - "York, R.A."
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1
Modeling the capacitive nonlinearity in thin-film BST varactors
Published in IEEE transactions on microwave theory and techniques (01-10-2005)“…A simple closed-form expression for the dielectric nonlinearity in thin-film high-permittivity barium strontium titanate (BST) devices is obtained from a…”
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Journal Article -
2
Active integrated antennas
Published in IEEE transactions on microwave theory and techniques (01-03-2002)“…This paper provide a review of the active integrated antenna (AIA) technologies. After a brief introduction on the definition and some historical remarks, the…”
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3
The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
Published in IEEE electron device letters (01-01-2006)“…The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a…”
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4
Quasi-optical and spatial power combining
Published in IEEE transactions on microwave theory and techniques (01-03-2002)“…Quasi-optical power-combining techniques have been developed to address fundamental limitations in solid-state devices and circuits. These techniques have been…”
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Journal Article -
5
A C-band high-dynamic range GaN HEMT low-noise amplifier
Published in IEEE microwave and wireless components letters (01-06-2004)“…A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6…”
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6
Injection- and phase-locking techniques for beam control [antenna arrays]
Published in IEEE transactions on microwave theory and techniques (01-11-1998)“…Applications of millimeter-wave radar, imaging, and communication technology requires cost-effective implementation of intelligent scanning antenna systems…”
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7
Broad-band high-power amplifier using spatial power-combining technique
Published in IEEE transactions on microwave theory and techniques (01-12-2003)“…High power, broad bandwidth, high linearity, and low noise are among the most important features in amplifier design. The broad-band spatial power-combining…”
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8
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
Published in IEEE microwave and wireless components letters (01-01-2006)“…A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain…”
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9
Some considerations for optimal efficiency and low noise in large power combiners
Published in IEEE transactions on microwave theory and techniques (01-08-2001)“…This paper examines some relationships between important design parameters in large combiner systems and key performance objectives such as power, efficiency,…”
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10
Nonlinear analysis of phase relationships in quasi-optical oscillator arrays
Published in IEEE transactions on microwave theory and techniques (01-10-1993)“…A dynamic theory of coupled oscillators is developed and applied to the class of loosely coupled quasi-optical oscillator arrays. This theory permits the…”
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Journal Article -
11
A 120-W X-band spatially combined solid-state amplifier
Published in IEEE transactions on microwave theory and techniques (01-12-1999)“…In this paper, we present new results in the development of a broad-band spatial power-combining system implemented in a standard X-band waveguide environment…”
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12
Multioctave spatial power combining in oversized coaxial waveguide
Published in IEEE transactions on microwave theory and techniques (01-05-2002)“…We describe a multioctave power-combiner structure using finline arrays in an oversized coaxial waveguide. The spectral-domain method (SDM) is used to compute…”
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13
FDTD analysis of wave propagation in nonlinear absorbing and gain media
Published in IEEE transactions on antennas and propagation (01-03-1998)“…An explicit finite-difference time-domain (FDTD) scheme for wave propagation in certain kinds of nonlinear media such as saturable absorbers and gain layers in…”
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14
Spectral transmittance of lossy printed resonant-grid terahertz bandpass filters
Published in IEEE transactions on microwave theory and techniques (01-04-2000)“…In this paper, we present terahertz bandpass filters composed of resonant arrays of crossed slots in lossy metal films deposited on dielectric membranes. The…”
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15
Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters
Published in IEEE transactions on microwave theory and techniques (01-01-2005)“…As the complexity of modern modulation schemes increases, the noise levels inserted in the receive band by the transmitter are also increased. A technique to…”
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Journal Article Conference Proceeding -
16
Distributed phase shifter with pyrochlore bismuth zinc niobate thin films
Published in IEEE microwave and wireless components letters (01-05-2006)“…A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported…”
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17
Synchronization of oscillators coupled through narrow-band networks
Published in IEEE transactions on microwave theory and techniques (01-02-2001)“…The ability of two coupled oscillators to synchronize depends critically on the coupling network. Previous analyses have accurately predicted the performance…”
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18
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
Published in IEEE transactions on microwave theory and techniques (01-12-2000)“…In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on…”
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Journal Article -
19
Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs
Published in IEEE transactions on microwave theory and techniques (01-02-2005)“…The effect of noise figure of different AlGaN/GaN high electron-mobility transistor (HEMT) epitaxy structures is reported. The addition of a thin AlN layer…”
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Journal Article -
20
A GaN differential oscillator with improved harmonic performance
Published in IEEE microwave and wireless components letters (01-07-2005)“…The first AlGaN/GaN HEMT based differential oscillator is reported. The MMIC oscillates at a frequency of 4.16 GHz and provides 22.9 dBm of power from one side…”
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