Search Results - "York, R.A."

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  1. 1

    Modeling the capacitive nonlinearity in thin-film BST varactors by Chase, D.R., Lee-Yin Chen, York, R.A.

    “…A simple closed-form expression for the dielectric nonlinearity in thin-film high-permittivity barium strontium titanate (BST) devices is obtained from a…”
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    Journal Article
  2. 2

    Active integrated antennas by Chang, K., York, R.A., Hall, P.S., Itoh, T.

    “…This paper provide a review of the active integrated antenna (AIA) technologies. After a brief introduction on the definition and some historical remarks, the…”
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    Journal Article
  3. 3

    The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs by Sanabria, C., Chakraborty, A., Hongtao Xu, Rodwell, M.J., Mishra, U.K., York, R.A.

    Published in IEEE electron device letters (01-01-2006)
    “…The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a…”
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    Journal Article
  4. 4

    Quasi-optical and spatial power combining by DeLisio, M.P., York, R.A.

    “…Quasi-optical power-combining techniques have been developed to address fundamental limitations in solid-state devices and circuits. These techniques have been…”
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    Journal Article
  5. 5

    A C-band high-dynamic range GaN HEMT low-noise amplifier by Hongtao Xu, Sanabria, C., Chini, A., Keller, S., Mishra, U.K., York, R.A.

    “…A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6…”
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    Journal Article
  6. 6

    Injection- and phase-locking techniques for beam control [antenna arrays] by York, R.A., Itoh, T.

    “…Applications of millimeter-wave radar, imaging, and communication technology requires cost-effective implementation of intelligent scanning antenna systems…”
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    Journal Article
  7. 7

    Broad-band high-power amplifier using spatial power-combining technique by Pengcheng Jia, Lee-Yin Chen, Alexanian, A., York, R.A.

    “…High power, broad bandwidth, high linearity, and low noise are among the most important features in amplifier design. The broad-band spatial power-combining…”
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    Journal Article
  8. 8

    A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz by Hongtao Xu, Gao, S., Heikman, S., Long, S.I., Mishra, U.K., York, R.A.

    “…A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain…”
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    Journal Article
  9. 9

    Some considerations for optimal efficiency and low noise in large power combiners by York, R.A.

    “…This paper examines some relationships between important design parameters in large combiner systems and key performance objectives such as power, efficiency,…”
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    Journal Article
  10. 10

    Nonlinear analysis of phase relationships in quasi-optical oscillator arrays by York, R.A.

    “…A dynamic theory of coupled oscillators is developed and applied to the class of loosely coupled quasi-optical oscillator arrays. This theory permits the…”
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    Journal Article
  11. 11

    A 120-W X-band spatially combined solid-state amplifier by Nai-Shuo Cheng, Pengcheng Jia, Rensch, D.B., York, R.A.

    “…In this paper, we present new results in the development of a broad-band spatial power-combining system implemented in a standard X-band waveguide environment…”
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    Journal Article
  12. 12

    Multioctave spatial power combining in oversized coaxial waveguide by Pengcheng Jia, Lee-Yin Chen, Alexanian, A., York, R.A.

    “…We describe a multioctave power-combiner structure using finline arrays in an oversized coaxial waveguide. The spectral-domain method (SDM) is used to compute…”
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    Journal Article
  13. 13

    FDTD analysis of wave propagation in nonlinear absorbing and gain media by Nagra, A.S., York, R.A.

    “…An explicit finite-difference time-domain (FDTD) scheme for wave propagation in certain kinds of nonlinear media such as saturable absorbers and gain layers in…”
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    Journal Article
  14. 14

    Spectral transmittance of lossy printed resonant-grid terahertz bandpass filters by MacDonald, M.E., Alexanian, A., York, R.A., Popovic, Z., Grossman, E.N.

    “…In this paper, we present terahertz bandpass filters composed of resonant arrays of crossed slots in lossy metal films deposited on dielectric membranes. The…”
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    Journal Article
  15. 15

    Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters by O'Sullivan, T., York, R.A., Noren, B., Asbeck, P.M.

    “…As the complexity of modern modulation schemes increases, the noise levels inserted in the receive band by the transmitter are also increased. A technique to…”
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    Journal Article Conference Proceeding
  16. 16

    Distributed phase shifter with pyrochlore bismuth zinc niobate thin films by Jaehoon Park, Lu, J.W., Boesch, D.S., Stemmer, S., York, R.A.

    “…A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported…”
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    Journal Article
  17. 17

    Synchronization of oscillators coupled through narrow-band networks by Lynch, J.J., York, R.A.

    “…The ability of two coupled oscillators to synchronize depends critically on the coupling network. Previous analyses have accurately predicted the performance…”
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    Journal Article
  18. 18

    A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier by Xu, J.J., Keller, S., Parish, G., Heikman, S., Mishra, U.K., York, R.A.

    “…In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on…”
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    Journal Article
  19. 19

    Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs by Sanabria, C., Hongtao Xu, Palacios, T., Chakraborty, A., Heikman, S., Mishra, U.K., York, R.A.

    “…The effect of noise figure of different AlGaN/GaN high electron-mobility transistor (HEMT) epitaxy structures is reported. The addition of a thin AlN layer…”
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    Journal Article
  20. 20

    A GaN differential oscillator with improved harmonic performance by Sanabria, C., Hongtao Xu, Heikman, S., Mishra, U.K., York, R.A.

    “…The first AlGaN/GaN HEMT based differential oscillator is reported. The MMIC oscillates at a frequency of 4.16 GHz and provides 22.9 dBm of power from one side…”
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    Journal Article