Search Results - "Yoon, S. F."

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  1. 1

    Broadband Terahertz Plasmonic Response of Touching InSb Disks by Hanham, S. M., Fernández-Domínguez, A. I., Teng, J. H., Ang, S. S., Lim, K. P., Yoon, S. F., Ngo, C. Y., Klein, N., Pendry, J. B., Maier, S. A.

    Published in Advanced materials (Weinheim) (11-09-2012)
    “…The plasmonic behavior of dimers of touching semiconductor disks is studied experimentally in the difficult‐to‐realize regime where the disks are only…”
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    Journal Article
  2. 2

    Low temperature direct wafer bonding of GaAs to Si via plasma activation by Yeo, C. Y., Xu, D. W., Yoon, S. F., Fitzgerald, E. A.

    Published in Applied physics letters (04-02-2013)
    “…The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium…”
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    Journal Article
  3. 3

    A novel multi-walled carbon nanotube-based biosensor for glucose detection by Wang, S.G, Zhang, Qing, Wang, Ruili, Yoon, S.F

    “…The bioelectrochemical characteristics of a novel multi-walled carbon nanotube (MWNT)-based biosensor for glucose detection are studied and compared with those…”
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    Journal Article
  4. 4

    Improved performance of SiC MESFETs using double-recessed structure by Zhu, C.L., Rusli, Tin, C.C., Zhang, G.H., Yoon, S.F., Ahn, J.

    Published in Microelectronic engineering (2006)
    “…A double recessed SiC MESFET was proposed and its electrical performances were studied by numerical simulation. Our simulated results showed that the…”
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    Journal Article Conference Proceeding
  5. 5

    Multi-walled carbon nanotubes for the immobilization of enzyme in glucose biosensors by Wang, S.G., Zhang, Qing, Wang, Ruili, Yoon, S.F., Ahn, J., Yang, D.J., Tian, J.Z., Li, J.Q., Zhou, Q.

    Published in Electrochemistry communications (01-09-2003)
    “…A novel biosensor, comprised of electrode of gold/multi-walled carbon nanotubes–glucose oxidase (Au/MWNTs–GOD), has been developed. The MWNTs were produced by…”
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    Journal Article
  6. 6

    Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature by Ngo, C.Y., Yoon, S.F., Tanoto, H., Hui, H.K., Lim, D.R., Wong, Vincent, Chua, S.J.

    Published in Journal of crystal growth (15-05-2011)
    “…Bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately…”
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    Journal Article Conference Proceeding
  7. 7

    Dimensional variation in production of high-aspect-ratio micro-pillars array by micro powder injection molding by LI, S. G, FU, G, READING, I, TOR, S. B, LOH, N. H, CHATURVEDI, P, YOON, S. F, YOUCEF-TOUMI, K

    “…Micro powder injection molding (μPIM) is one of the potential processes for the mass production of metallic microstructures and micro components. Here, μPIM is…”
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    Journal Article
  8. 8

    Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs by Wicaksono, S., Yoon, S.F., Tan, K.H., Cheah, W.K.

    Published in Journal of crystal growth (01-02-2005)
    “…GaAsSbN is a potential material for GaAs-based long wavelength optoelectronic devices. In this work, using solid source molecular beam epitaxy in conjunction…”
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    Journal Article
  9. 9

    Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures by Ngo, C.Y., Yoon, S.F., Loke, W.K., Ng, T.K., Chua, S.J.

    Published in Journal of crystal growth (15-03-2009)
    “…In this work, preliminary photovoltaic results of the 10-layer InAs/InGaAs/GaAs quantum dot (QD) heterostructures were presented. As demonstrated, enhancement…”
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    Journal Article Conference Proceeding
  10. 10

    Effects of Annealing and p-Doping on the Two-State Competition in 1.3 μm InAs/GaAs Quantum-Dot Lasers by Zhao, H. H., Yoon, S. S., Ngo, C. C., Wang, R. R., Cao, Q. Q., Liu, C. C.

    Published in IEEE transactions on nanotechnology (01-11-2011)
    “…In this letter, we investigate the effects of annealing and p-doping on the two-state competition of 1.3 μm InAs/GaAs quantum-dot (QD) lasers. By analyzing the…”
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    Journal Article
  11. 11

    Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers by Zhao, HX, Yoon, SF, Tong, CZ, Liu, CY, Wang, R, Cao, Q

    Published in Nanoscale research letters (01-01-2011)
    “…We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5-50°C)…”
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    Journal Article
  12. 12

    Correlation between adhesion of diamond-like carbon film on LiTaO3 substrate and SAW velocity by JINGZE TIAN, QING ZHANG, ZHOU, Q, GRUENWALD, R, HUESGEN, M, YOON, S. F, AHN, J

    Published in Surface & coatings technology (01-08-2005)
    “…Coating diamond-like carbon (DLC) film to LiTaO3 substrate is theoretically expected to stiffen the substrate surface so as to accelerate the surface acoustic…”
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    Conference Proceeding Journal Article
  13. 13

    Effects of Thermal Annealing on the Dynamic Characteristics of InAs/GaAs Quantum Dot Lasers by Zhao, H X, Yoon, S F, Ngo, C Y, Wang, R, Tong, C Z, Liu, C Y, Cao, Q

    Published in IEEE photonics journal (01-08-2010)
    “…We investigated the effects of rapid thermal annealing (RTA) on the dynamic characteristics of the InAs/GaAs ten-layer quantum dot (QD) laser. Improvements in…”
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    Journal Article
  14. 14

    Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers by Yu, J., Ahn, J., Yoon, S. F., Zhang, Q., Rusli, Gan, B., Chew, K., Yu, M. B., Bai, X. D., Wang, E. G.

    Published in Applied physics letters (25-09-2000)
    “…Highly oriented boron carbonitride (BCN) nanostructures consisting of nanotubes and nanofibers have been synthesized by bias-assisted hot-filament chemical…”
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    Journal Article
  15. 15

    Comparison of nitrogen compositions in the as-grown GaNxAs1−x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy by Fan, W. J., Yoon, S. F., Ng, T. K., Wang, S. Z., Loke, W. K., Liu, R., Wee, A.

    Published in Applied physics letters (03-06-2002)
    “…High-resolution x-ray diffraction (HRXRD) and secondary-ion mass spectroscopy were used to measure the N compositions of a series of as-grown GaNAs samples…”
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    Journal Article
  16. 16
  17. 17

    High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by Lew, K.L., Yoon, S.F., Wang, H., Wicaksono, S., Gupta, J.A., McAlister, S.P.

    Published in IEEE electron device letters (01-12-2007)
    “…AlGaAs/GaAsNSb heterojunction bipolar transistors (HBTs) with low turn-on voltage have been fabricated. The turn-on voltage of the device fabricated from an…”
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    Journal Article
  18. 18

    Synthesis and characterization of MWNTs with narrow diameter over nickel catalyst by MPCVD by Wang, S.G, Zhang, Qing, Yoon, S.F, Ahn, J

    Published in Scripta materialia (01-02-2003)
    “…Multi-walled carbon nanotubes (MWNTs) were synthesized on silicon substrates using nickel catalyst with thickness varied from 2 to 30 nm by microwave plasma…”
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    Journal Article
  19. 19

    A three-region analytical model for short-channel SiC MESFETs by Zhu, C.L., Rusli, Tin, C.C., Yoon, S.F., Ahn, J.

    Published in Microelectronic engineering (2006)
    “…An improved analytical three-region model is proposed for short-channel SiC metal semiconductor field effect transistors (MESFETs). It takes into account two…”
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    Journal Article Conference Proceeding
  20. 20

    Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process by Tan, K.H., Jia, B.W., Loke, W.K., Wicaksono, S., Yoon, S.F.

    Published in Journal of crystal growth (01-10-2015)
    “…We report the formation of interfacial misfit dislocation found in GaSb layers grown on (001) GaAs substrates using anion exchange process at different growth…”
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    Journal Article