Search Results - "Yoon, Jong‐Gul"

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  1. 1

    Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field by Park, Sung Min, Wang, Bo, Das, Saikat, Chae, Seung Chul, Chung, Jin-Seok, Yoon, Jong-Gul, Chen, Long-Qing, Yang, Sang Mo, Noh, Tae Won

    Published in Nature nanotechnology (01-05-2018)
    “…Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization…”
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    Journal Article
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    Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness by Shin, Yeong Jae, Kim, Yoonkoo, Kang, Sung‐Jin, Nahm, Ho‐Hyun, Murugavel, Pattukkannu, Kim, Jeong Rae, Cho, Myung Rae, Wang, Lingfei, Yang, Sang Mo, Yoon, JongGul, Chung, Jin‐Seok, Kim, Miyoung, Zhou, Hua, Chang, Seo Hyoung, Noh, Tae Won

    Published in Advanced materials (Weinheim) (17-05-2017)
    “…The atomic‐scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge…”
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    A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films by Yoon, Jong-Gul

    Published in Materials (20-08-2020)
    “…Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable…”
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  4. 4

    Flexoelectric Effect in the Reversal of Self-Polarization and Associated Changes in the Electronic Functional Properties of BiFeO3 Thin Films by Jeon, Byung Chul, Lee, Daesu, Lee, Myang Hwan, Yang, Sang Mo, Chae, Seung Chul, Song, Tae Kwon, Bu, Sang Don, Chung, Jin-Seok, Yoon, Jong-Gul, Noh, Tae Won

    Published in Advanced materials (Weinheim) (18-10-2013)
    “…Flexoelectricity can play an important role in the reversal of the self‐polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and…”
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    Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers by Wang, Lingfei, Cho, Myung Rae, Shin, Yeong Jae, Kim, Jeong Rae, Das, Saikat, Yoon, Jong-Gul, Chung, Jin-Seok, Noh, Tae Won

    Published in Nano letters (08-06-2016)
    “…Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for nonvolatile memories. Recently, significant…”
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  6. 6

    Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films by Lee, Daesu, Jeon, Byung Chul, Yoon, Aram, Shin, Yeong Jae, Lee, Myang Hwan, Song, Tae Kwon, Bu, Sang Don, Kim, Miyoung, Chung, Jin-Seok, Yoon, Jong-Gul, Noh, Tae Won

    Published in Advanced materials (Weinheim) (06-08-2014)
    “…Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never…”
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  7. 7

    Nanoscale Observation of Time-Dependent Domain Wall Pinning as the Origin of Polarization Fatigue by Yang, Sang Mo, Kim, Tae Heon, Yoon, Jong-Gul, Noh, Tae Won

    Published in Advanced functional materials (06-06-2012)
    “…The microscopic mechanism of polarization fatigue (i.e., a loss of switchable polarization under electrical cycling) remains one of the most important…”
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  8. 8

    Active Control of Ferroelectric Switching Using Defect-Dipole Engineering by Lee, Daesu, Jeon, Byung Chul, Baek, Seung Hyub, Yang, Sang Mo, Shin, Yeong Jae, Kim, Tae Heon, Kim, Yong Su, Yoon, Jong-Gul, Eom, Chang Beom, Noh, Tae Won

    Published in Advanced materials (Weinheim) (18-12-2012)
    “…Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric…”
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  9. 9

    Nanoscale mapping of temperature-dependent conduction in an epitaxial VO2 film grown on an Al2O3 substrate by Kim, Ahyoung, Lim, Soo Yeon, Park, Jung Hyun, Jin-Seok, Chung, Cheong, Hyeonsik, Ko, Changhyun, Jong-Gul Yoon, Yang, Sang Mo

    Published in RSC advances (16-08-2022)
    “…Vanadium dioxide (VO2) is one of the extensively studied strongly correlated oxides due to its intriguing insulator–metal transition near room temperature. In…”
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  10. 10

    Continuous Control of Charge Transport in Bi-Deficient BiFeO3 Films Through Local Ferroelectric Switching by Kim, Tae Heon, Jeon, Byung Chul, Min, Taeyoon, Yang, Sang Mo, Lee, Daesu, Kim, Yong Su, Baek, Seung-Hyub, Saenrang, Wittawat, Eom, Chang-Beom, Song, Tae Kwon, Yoon, Jong-Gul, Noh, Tae Won

    Published in Advanced functional materials (05-12-2012)
    “…It is demonstrated that electric transport in Bi‐deficient Bi1‐δFeO3 ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and…”
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    Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films by So, Y. W., Kim, D. J., Noh, T. W., Yoon, Jong-Gul, Song, T. K.

    Published in Applied physics letters (28-02-2005)
    “…The polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films were investigated by measuring write pulse-width dependences of switched…”
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  14. 14

    Coercive fields in ultrathin BaTiO3 capacitors by Jo, J. Y., Kim, Y. S., Noh, T. W., Yoon, Jong-Gul, Song, T. K.

    Published in Applied physics letters (04-12-2006)
    “…Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5.0nm. The EC appears nearly…”
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  15. 15

    Origin of metal–insulator transition temperature enhancement in underdoped lanthanum manganite films by Murugavel, P., Lee, J. H., Yoon, Jong-Gul, Noh, T. W., Chung, J.-S., Heu, M., Yoon, S.

    Published in Applied physics letters (24-03-2003)
    “…The possibility of controlling transport properties of colossal magnetoresistance manganite films using substrate-induced strain has attracted great interest…”
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  16. 16

    Multilevel Data Storage Memory Using Deterministic Polarization Control by Lee, Daesu, Yang, Sang Mo, Kim, Tae Heon, Jeon, Byung Chul, Kim, Yong Su, Yoon, JongGul, Lee, Ho Nyung, Baek, Seung Hyup, Eom, Chang Beom, Noh, Tae Won

    Published in Advanced materials (Weinheim) (17-01-2012)
    “…Multilevel non‐volatile memory for high‐density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real…”
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  17. 17

    Flexoelectric Rectification of Charge Transport in Strain-Graded Dielectrics by Lee, Daesu, Yang, Sang Mo, Yoon, Jong-Gul, Noh, Tae Won

    Published in Nano letters (12-12-2012)
    “…Flexoelectricity is emerging as a fascinating means for exploring the physical properties of nanoscale materials. Here, we demonstrated the unusual coupling…”
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    Nanoscale studies of defect-mediated polarization switching dynamics in ferroelectric thin film capacitors by Yang, Sang Mo, Yoon, Jong-Gul, Noh, Tae Won

    Published in Current applied physics (01-09-2011)
    “…Recent developments in ferroelectric (FE) domain imaging techniques have established an understanding of intriguing polarization switching dynamics. In…”
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  20. 20

    Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition by Yi, Woo-Chul, Choe, Joon-Seon, Moon, Chang-Rok, Kwun, Sook-Il, Yoon, Jong-Gul

    Published in Applied physics letters (17-08-1998)
    “…Highly (0001)-oriented thin films of YMnO3 were grown directly on Si substrates by chemical solution deposition. The crystallinity of the films was…”
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