Search Results - "Yoo, Sijung"

An analytical interpretation of the memory window in ferroelectric field-effect transistors by Yoo, Sijung, Choe, Duk-Hyun, Lee, Hyun Jae, Jo, Sanghyun, Lee, Yun Sung, Park, Yoonsang, Kim, Ki-Hong, Kim, Donghoon, Nam, Seung-Geol

“…In this study, we present an analytical equation for describing the memory window of ferroelectric field-effect transistors (FeFETs). The analytical equation…”
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Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces by Kim, Seongkyung, Yoo, Sijung, Lim, Hajin, Kim, Joon-Rae, Jeong, Jae Kyeong, Kim, Hyeong Joon

“…A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization…”
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Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases by Lee, Woongkyu, Yoo, Sijung, Yoon, Kyung Jean, Yeu, In Won, Chang, Hye Jung, Choi, Jung-Hae, Hoffmann-Eifert, Susanne, Waser, Rainer, Hwang, Cheol Seong

“…Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a…”
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Nociceptive Memristor by Kim, Yumin, Kwon, Young Jae, Kwon, Dae Eun, Yoon, Kyung Jean, Yoon, Jung Ho, Yoo, Sijung, Kim, Hae Jin, Park, Tae Hyung, Han, Jin‐Woo, Kim, Kyung Min, Hwang, Cheol Seong

“…The biomimetic characteristics of the memristor as an electronic synapse and neuron have inspired the advent of new information technology in the neuromorphic…”
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices by Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J, Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

“…Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications…”
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Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory by Yoo, Sijung, Lee, Hyung Dong, Lee, Seungyun, Choi, Hyejung, Kim, Taehoon

“…We developed an electro-thermal model for cross-point phase-change memory (X-PCM) and compared the calculation values with the experimental results. In order…”
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Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film by Yoo, Sijung, Gwon, Taehong, Eom, Taeyong, Kim, Sanggyun, Hwang, Cheol Seong

“…The multilayered optical coating whose structure consists of optical cavity and multiple layers of ultrathin phase change material (PCM) film is presented. The…”
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Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3) x Layers Using Ge4+–Alkoxide Precursors by Eom, Taeyong, Gwon, Taehong, Yoo, Sijung, Choi, Byung Joon, Kim, Moo-Sung, Buchanan, Iain, Xiao, Manchao, Hwang, Cheol Seong

“…(GeTe2)(1–x)(Sb2Te3) x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 °C using Ge(OCH3)4 or…”
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Laminated Ferroelectric FET With Large Memory Window and High Reliability by Lee, Hyun Jae, Nam, Seunggeol, Lee, Yunseong, Kim, Kihong, Choe, Duk-Hyun, Yoo, Sijung, Park, Yoonsang, Jo, Sanghyun, Kim, Donghoon, Heo, Jinseong

“…In this work, we report a planar Si-based ferroelectric field-effect transistor (FEFET) characterized by a high memory window (MW) of 4.79 V, ten-year…”
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Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms by Gwon, Taehong, Eom, Taeyong, Yoo, Sijung, Yoo, Chanyoung, Park, Eui-sang, Kim, Sanggyun, Kim, Moo-Sung, Buchanan, Iain, Xiao, Manchao, Ivanov, Sergei, Hwang, Cheol Seong

“…In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and ternary Ge–Sb–Te thin films is reported, where HGeCl3 and…”
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Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol by Gwon, Taehong, Eom, Taeyong, Yoo, Sijung, Lee, Han-Koo, Cho, Deok-Yong, Kim, Moo-Sung, Buchanan, Iain, Xiao, Manchao, Ivanov, Sergei, Hwang, Cheol Seong

“…In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge­(N­(Si­(CH3)3)2)2, in which Ge is in +2 oxidation…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

“…To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array…”
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Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials by Lee, Woongkyu, An, Cheol Hyun, Yoo, Sijung, Jeon, Woojin, Chung, Min Jung, Kim, Sang Hyeon, Hwang, Cheol Seong

“…To improve the electrical properties of metal/insulator/metal capacitors for dynamic random access memory, the effects of the top electrode materials and their…”
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Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application by Eom, Taeyong, Gwon, Taehong, Yoo, Sijung, Choi, Byung Joon, Kim, Moo-Sung, Buchanan, Iain, Ivanov, Sergei, Xiao, Manchao, Hwang, Cheol Seong

“…For phase change memories application, Ge–Sb–Te films were prepared by a stable and reliable atomic layer deposition (ALD) method. Ge­(OC2H5)4, Sb­(OC2H5)3,…”
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Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film by Jeon, Woojin, Yoo, Sijung, Kim, Hyo Kyeom, Lee, Woongkyu, An, Cheol Hyun, Chung, Min Jung, Cho, Cheol Jin, Kim, Seong Keun, Hwang, Cheol Seong

“…The effects of Pt and RuO2 top electrodes on the electrical properties of capacitors with Al-doped TiO2 (ATO) films grown on the RuO2 bottom electrode by an…”
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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO 2 /Ti/Pt Nanosized ReRAM Devices by Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J., Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

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Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl 3 , Sb(OC 2 H 5 ) 3 , and {(CH 3 ) 3 Si} 2 Te and Their Reaction Mechanisms by Gwon, Taehong, Eom, Taeyong, Yoo, Sijung, Yoo, Chanyoung, Park, Eui-sang, Kim, Sanggyun, Kim, Moo-Sung, Buchanan, Iain, Xiao, Manchao, Ivanov, Sergei, Hwang, Cheol Seong

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Boosting Non-volatile Memory Performance with Exhalative Annealing: A Novel Approach to Low-Temperature Crystallization of Hafnia Based Ferroelectric by Lee, Yunseong, Kim, Un Jeong, Kim, Kihong, Yun, Dong-Jin, Choe, Duk-hyun, Yoo, Sijung, Lee, Hyun Jae, Nam, Seung-Geol, Jo, Sanghyun, Park, Yoonsang, Kim, Donghoon, Kim, Dongmin, Kim, Haeryong, Shin, Keunwook, Nahm, Sahn, Heo, Jinseong

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Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition by Gwon, Taehong, Mohamed, Ahmed Yousef, Yoo, Chanyoung, Park, Eui-sang, Kim, Sanggyun, Yoo, Sijung, Lee, Han-Koo, Cho, Deok-Yong, Hwang, Cheol Seong

“…The local bonding structures of Ge x Te1–x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge­(N­(Si­(CH3)3)2)2 and…”
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Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer by Yoo, Sijung, Kim, Donghoon, Choe, Duk-Hyun, Lee, Hyun Jae, Lee, Yunseong, Jo, Sanghyun, Park, Yoonsang, Kim, Ki Hong, Jung, Kyooho, Jung, Moonil, Lee, Kwang-Hee, Yang, Jee-Eun, Kim, Sangwook, Nam, Seung-Geol

“…We demonstrated a novel Ferroelectric Field-Effect Transistor (FeFET) with an IGZO channel, featuring a record-high memory window (MW) of up to 17.8V. A…”
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