Search Results - "Yoo, Junghwan"

Objective analysis of orbital rim fracture CT images using curve and area measurement by Lee, Myungchul, Yoo, Junghwan, Lee, Hasup

“…The orbital bone presents a closed curve, and fracture results in disfigurement. An image analysis procedure was developed to examine before and after…”
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Two 122-GHz Phase-Locked Loops in 65-nm CMOS Technology by Kim, Namhyung, Song, Kiryong, Yun, Jongwon, Yoo, Junghwan, Rieh, Jae-Sung

“…Two 122-GHz phase-locked loops (PLLs) have been developed based on a 65-nm Si CMOS technology, and their performances are compared. For the first PLL, a…”
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A 300-GHz CMOS 7-by-7 Detector Array for Optics-less THz Imaging with Scan-less Target Object by Song, Kiryong, Kim, Jungsoo, Kim, Doyoon, Yoo, Junghwan, Rieh, Jae-Sung

“…In this work, a 300-GHz 7 × 7 detector array based on a 65-nm Si CMOS technology has been developed and transmission imaging was performed using the detector…”
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A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz by Yoo, Junghwan, Kim, Jungsoo, Yun, Jongwon, Kaynak, Mehmet, Rieh, Jae-Sung

“…This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology. The driver…”
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CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies by Junghwan Yoo, Jae-Sung Rieh

“…This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different…”
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CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies by Yoo, Junghwan, Rieh, Jae-Sung

“…This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different…”
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Relationship Between Breast Density and Ptosis Degree in Direct-to-Implant Breast Reconstruction by Lee, Myungchul, Yoo, Junghwan, Na, Youngsu, Kim, Jeenam, Shin, Donghyeok, Choi, Hyungon

“…Direct-to-implant breast reconstruction is a popular procedure since breast volume can be acquired immediately. Various evaluations have been utilized to…”
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A Scalable 300-GHz Multichip Stitched CMOS Detector Array by Song, Kiryong, Kim, Doyoon, Kim, Jungsoo, Yoo, Junghwan, Keum, Wooyong, Rieh, Jae-Sung

“…A terahertz (THz) CMOS detector array based on multiple chips stitched together is reported. The proposed multichip detector is scalable as the total number of…”
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A 140-GHz FMCW Radar Transceiver With Dual-Lens Packaging for Improved Beam Alignment in 65-nm CMOS Technology by Yoo, Junghwan, Kim, Doyoon, Keum, Wooyong, Son, Heekang, Kim, Jungsoo, Lee, Il-Min, Yang, Sanghyeok, Kim, Hyunsoo, Rieh, Jae-Sung

“…An frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) chip operating near 140 GHz has been developed based on a 65-nm CMOS technology,…”
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A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology by Son, Heekang, Yoo, Junghwan, Kim, Doyoon, Rieh, Jae-Sung

“…A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of…”
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A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range by Kim, Sooyeon, Yoon, Daekeun, Kim, Jungsoo, Yoo, Junghwan, Song, Kiryong, Rieh, Jae-Sung

“…A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of…”
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Terahertz Signal Source and Receiver Operating Near 600 GHz and Their 3-D Imaging Application by Kim, Jungsoo, Yoon, Daekeun, Son, Heekang, Kim, Doyoon, Yoo, Junghwan, Yun, Jongwon, Ng, Herman Jalli, Kaynak, Mehmet, Rieh, Jae-Sung

“…In this article, a set of oscillators and a heterodyne image receiver operating near 600 GHz have been developed, each based on a 250-nm InP heterojunction…”
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600-GHz High-Power Signal Sources Based on 250-nm InP HBT Technology by Son, Heekang, Kim, Jungsoo, Song, Kiryong, Kim, Doyoon, Yoo, Junghwan, Rieh, Jae-Sung

“…Two 600-GHz radiation signal sources, a single- and four-element oscillators, have been developed based on a 250-nm InP heterojunction bipolar transistor…”
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A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS by Nath, Surajit Kumar, Yoo, Junghwan, Rieh, Jae-Sung, Yoon, Daekeun

“…This paper presents a wide tuning range push-push voltage-controlled oscillator (VCO) at the sub-THz frequency bands. With the introduction of a novel…”
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Approaches to enhance the performance of SiGe imagers operating near 130 GHz and 300 GHz by Jae-Sung Rieh, Daekeun Yoon, Jongwon Yun, Kiryong Song, Jungsoo Kim, Sooyeon Kim, Junghwan Yoo, Kaynak, Mehmet, Tillack, Bernd

“…A comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise…”
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300-GHz InP HBT Quadrature VCO With Integrated Mixer by Song, Kiryong, Kim, Jungsoo, Son, Heekang, Yoo, Junghwan, Cho, Minje, Rieh, Jae-Sung

“…A 300-GHz quadrature voltage-controlled oscillator (QVCO) integrated with a pair of mixers based on an InP heterojunction bipolar transistor (HBT) technology…”
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A 272-341-GHz Integrated Amplifier-Frequency-Doubler Chain in 65-nm CMOS by Yoo, Junghwan, Kim, Doyoon, Son, Heekang, Keum, Wooyong, Yang, Sanghyeok, Kim, Hyunsoo, Rieh, Jae-Sung

“…This letter presents the development of a wideband amplifier-frequency-doubler chain (AFDC) operating at around 300 GHz based on a 65-nm CMOS technology. A new…”
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A 283-GHz Fully Integrated Phase-Locked Loop Based on 65-nm CMOS by Yoo, Junghwan, Kim, Doyoon, Kim, Jungsoo, Song, Kiryong, Rieh, Jae-Sung

“…A 283-GHz fully integrated phase-locked loop (PLL) based on a 65-nm CMOS technology is presented. A triple-push ring voltage-controlled oscillator and a…”
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InP HBT Oscillators Operating up to 682 GHz with Coupled-Line Load for Improved Efficiency and Output Power by Kim, Jungsoo, Son, Heekang, Kim, Doyoon, Song, Kiryong, Yoo, Junghwan, Rieh, Jae-Sung

“…THz oscillators operating up to 680 GHz have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. This work…”
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A CMOS triple-push 280-GHz VCO integrated with 1/16,384 divider chain by Junghwan Yoo, Namhyung Kim, Jongwon Yun, Myeong-Gyo Seo, Jae-Sung Rieh

“…In this work, a 280-GHz VCO integrated with a frequency divider with a large division ratio is presented. The triple-push Colpitts VCO, fabricated in a 65-nm…”
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