Search Results - "Yoo, J.R."

Sequence type 72 community-associated meticillin-resistant Staphylococcus aureus emerged as a predominant clone of nasal colonization in newly admitted patients by Park, S.Y, Chung, D.R, Yoo, J.R, Baek, J.Y, Kim, S.H, Ha, Y.E, Kang, C.-I, Peck, K.R, Lee, N.Y, Song, J.-H

“…Summary Current knowledge of community-associated (CA) meticillin-resistant Staphylococcus aureus (MRSA) carriage in hospitalized patients is incomplete…”
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9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser by Lee, J.H., Kim, J.Y., Lee, S.M., Yoo, J.R., Kim, K.S., Cho, S.H., Lim, S.J., Kim, G.B., Hwang, S.M., Kim, T., Park, Y.J.

“…We report the first demonstration of an end-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with more than 9.1-W continuous-wave…”
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Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060 nm by Kim, K.S., Yoo, J.R., Lee, S.M., Lim, S.J., Kim, J.Y., Lee, J.H., Cho, S.H., Kim, T., Park, Y.J.

“…We report on the high-power operation of an optically pumped VECSEL emitting at 1060 nm. The VECSEL structure, grown by MOVPE, consists of resonant periodic…”
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Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers by Park, T., Choi, S., Lee, D.H., Yoo, J.R., Lee, B.C., Kim, J.Y., Lee, C.G., Chi, K.K., Hong, S.H., Hynn, S.J., Shin, Y.G., Han, J.N., Park, I.S., Chung, U.I., Moon, J.T., Yoon, E., Lee, J.H.

“…Nano scale body-tied FinFETs have been firstly fabricated. They have fin top width of 30 nm, fin bottom width of 61 nm, fin height of 99 nm, and gate length of…”
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Highly efficient InGaAs QW vertical external cavity surface emitting lasers emitting at 1060nm by KIM, K. S, YOO, J. R, LEE, S. M, LIM, S. J, KIM, J. Y, LEE, J. H, CHO, S. H, KIM, T, PARK, Y. J

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LPI waveform shaping by modified chirp filter by Yoo, J.R.

“…A computer simulation has shown that a modified chirp filter with odd phase symmetry can suppress the line spectrum produced by a binary phase shift keying…”
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LPI technique based on random complex spreading code by Yoo, J.R.

“…A squaring circuit (SC) yields the line spectrum of a direct-sequence spread spectrum (DS-SS) signal at the chip rate and its harmonics around DC and…”
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Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors: Metrology, Dopant Loss, and Novel Electrostatic Junction by Buh, G.H., Park, T., Yon, G.H., Hong, S.J., Jee, Y.J., Kim, S.B., Lee, J.S., Ryoo, C.W., Yoo, J.R., Lee, J.W., Shin, Y.G., Chung, U.-I., Moon, J.T.

“…Issues of ultrashallow junctions (USJ) for sub-50 nm gate-length transistors are discussed. To measure the actual current drivability of source/drain extension…”
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A digital receiver structure based on a multilevel correlative spreading code by Kingston, S.C., Yoo, J.R.

“…Correlative level coding provides spectral reshaping of a pulse train such that the transmit spectrum can be limited within the Nyquist bandwidth without…”
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Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) by Buh, G.H., Park, T., Yon, G.H., Kim, G.C., Koo, B.Y., Ryoo, C.W., Hong, S.J., Yoo, J.R., Lee, J.W., Shin, Y.G., U-In Chung, Moon, J.T., Byung-Il Ryu

“…Electrostatic channel extension (ESCE) MOSFET, a transistor with static inversion layer formed by interface fixed charge is fabricated in planar bulk structure…”
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Recessed junction and low energy n-junction implantation characteristics by Lee, B.C., Yoo, J.R., Lee, D.H., Kim, C.S., Kim, S.M., Choi, S., Chung, U.I., Moon, J.T.

“…The characteristics of cell transistor with low energy junction implantation and recessed junction, which is formed by in_situ phosphorus doped selective…”
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