Search Results - "Yoo, In Kyeong"

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory by Kim, Sungho, Kim, Sae-Jin, Kim, Kyung Min, Lee, Seung Ryul, Chang, Man, Cho, Eunju, Kim, Young-Bae, Kim, Chang Jung, -In Chung, U., Yoo, In-Kyeong

“…Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and…”
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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory by Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo

“…The fabrication of controlled nanostructures such as quantum dots, nanotubes, nanowires, and nanopillars has progressed rapidly over the past 10 years…”
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A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory by Lee, Myoung-Jae, Lee, Dongsoo, Cho, Seong-Ho, Hur, Ji-Hyun, Lee, Sang-Moon, Seo, David H, Kim, Dong-Sik, Yang, Moon-Seung, Lee, Sunghun, Hwang, Euichul, Uddin, Mohammad Rakib, Kim, Hojung, Chung, U-In, Park, Youngsoo, Yoo, In-Kyeong

“…Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive…”
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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications by Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo, Hyunsang Hwang

“…We propose a HfZrO x (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance…”
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Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing by Oh, Seungyeol, Song, Jeonghwan, Yoo, In Kyeong, Hwang, Hyunsang

“…We investigate the effects of high-pressure hydrogen annealing (HPHA) on W/ferroelectric Al:HfO 2 /interface layer (IL)/Si stacks. With HPHA, degradation in…”
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures by Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

“…Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the…”
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A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory by Sangjin Park, Young-Kwan Cha, Cha, D., Shin, S., Jae Woong Hyun, Jung Hoon Lee, Youngsoo Park, In-Kyeong Yoo, Suk-Ho Choi

“…In this brief, the authors propose a new program/erase (P/E) scheme for NAND-type partially oxidized amorphous-Si (a-Si)-based charge-trap memory in which the…”
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High threshold voltage p-GaN gate power devices on 200 mm Si by Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, Hyoji Choi, Soogine Chong, Hyun-Sik Choi, Woochul Jeon, Hyuk Soon Choi, Jun Yong Kim, Young Hwan Park, Kyung Yeon Kim, Jong-Bong Park, Jong-Bong Ha, Ki Yeol Park, Jaejoon Oh, Jai Kwang Shin, U-In Chung, In-Kyeong Yoo, Kinam Kim

“…In this paper, we present high threshold voltage, low on-resistance, and high speed GaN-HEMT devices using a p-GaN layer in the gate stack. There are three…”
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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory by Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.

“…A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the…”
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HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications by Oh, Seungyeol, Kim, Taeho, Kwak, Myunghoon, Song, Jeonghwan, Woo, Jiyong, Jeon, Sanghun, Yoo, In Kyeong, Hwang, Hyunsang

“…We propose a HfZrO x (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance…”
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Multibit memories using a structure of SiO2/partially oxidized amorphous Si∕HfO2 by Park, Sangjin, Cha, Young-Kwan, Cha, Daigil, Park, Youngsoo, Yoo, In-Kyeong, Lee, Jung-Hyun, Seol, Kwang Soo, Choi, Suk-Ho

“…Memory capacitors with a structure of SiO2/partially oxidized amorphous Si (a-Si)/HfO2 have been prepared by sequential processes: atomic layer deposition…”
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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories by Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.

“…A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward…”
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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory by Seung Ryul Lee, Young-Bae Kim, Man Chang, Kyung Min Kim, Chang Bum Lee, Ji Hyun Hur, Gyeong-Su Park, Dongsoo Lee, Myoung-Jae Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim

“…A highly reliable RRAM with multi-level cell (MLC) characteristics were fabricated using a triple-layer structure (base layer/oxygen exchange layer/barrier…”
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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory by Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.

“…A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching…”
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Bi-layered RRAM with unlimited endurance and extremely uniform switching by Young-Bae Kim, Seung Ryul Lee, Dongsoo Lee, Chang Bum Lee, Man Chang, Ji Hyun Hur, Myoung-Jae Lee, Gyeong-Su Park, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim

“…We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the…”
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Investigation of pyroelectric electron emission from monodomain lithium niobate single crystals by Bourim, El Mostafa, Moon, Chang-Wook, Lee, Seung-Woon, Kyeong Yoo, In

“…The behaviors of thermally stimulated electron emission from pyroelectric monodomain lithium niobate single crystal (LiNbO 3) were investigated by utilizing a…”
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Resistance-switching characteristics of polycrystalline Nb2O5 for nonvolatile memory application by SIM, Hyunjun, CHOI, Dooho, LEE, Dongsoo, SEO, Sunae, LEE, Myong-Jae, YOO, In-Kyeong, HWANG, Hyunsang

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Performance of threshold switching in chalcogenide glass for 3D stackable selector by Sungho Kim, Young-Bae Kim, Kyung Min Kim, Sae-Jin Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Myoung-Jae Lee, Dongsoo Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo

“…The nature of threshold switching (TS) in AsTeGeSiN-based selector devices is comprehensively investigated. The scaling of the AC response is limited up to 5…”
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Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control by Jung, Ranju, Lee, Myoung-Jae, Seo, Sunae, Kim, Dong Chirl, Park, Gyeong-Su, Kim, Kihong, Ahn, Seungeon, Park, Youngsoo, Yoo, In-Kyeong, Kim, Jin-Soo, Park, Bae Ho

“…Resistance change random access memory devices using NiOx films with resistance switching properties have immense potential for high-density nonvolatile memory…”
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A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory by Lee, Myoung-Jae, Ahn, Seung-Eon, Lee, Chang Bum, Kim, Chang-Jung, Jeon, Sanghun, Chung, U-In, Yoo, In-Kyeong, Park, Gyeong-Su, Han, Seungwu, Hwang, In Rok, Park, Bae-Ho

“…Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of…”
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