Search Results - "Yoo, I. K"

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    Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory by Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.

    Published in Advanced materials (Weinheim) (19-11-2007)
    “…A memory cell consisting of a Pt/VO2/Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than Vth of 0.6 V, the…”
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    Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory by Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.

    Published in Advanced materials (Weinheim) (05-03-2008)
    “…A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching…”
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    A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories by Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.

    Published in Advanced materials (Weinheim) (08-01-2007)
    “…A one‐diode/one‐resistor structure, Pt/NiO/Pt/p‐NiOx/n‐TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward…”
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  5. 5

    Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications by Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, Yoo, I.K.

    Published in IEEE electron device letters (01-10-2005)
    “…The resistance switching behavior and switching mechanism of nonstoichiometric zirconium oxide thin films were investigated for nonvolatile memory application…”
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  6. 6

    Reproducible resistance switching in polycrystalline NiO films by Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., Park, B. H.

    Published in Applied physics letters (06-12-2004)
    “…Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering…”
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  7. 7

    Ferroelectric materials for neuromorphic computing by Oh, S., Hwang, H., Yoo, I. K.

    Published in APL materials (01-09-2019)
    “…Ferroelectric materials are promising candidates for synaptic weight elements in neural network hardware because of their nonvolatile multilevel memory effect…”
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    Conductivity switching characteristics and reset currents in NiO films by Seo, S., Lee, M. J., Seo, D. H., Choi, S. K., Suh, D.-S., Joung, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., Park, B. H.

    Published in Applied physics letters (28-02-2005)
    “…Conductivity switching phenomena controlled by external voltages have been investigated for various NiO films deposited by dc reactive sputtering methods. Pt ∕…”
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    chromatography-free release, isolation and purification of recombinant peptide for fibril self-assembly by Hartmann, B.M, Kaar, W, Yoo, I.K, Lua, L.H.L, Falconer, R.J, Middelberg, A.P.J

    Published in Biotechnology and bioengineering (01-12-2009)
    “…One of the major expenses associated with recombinant peptide production is the use of chromatography in the isolation and purification stages of a bioprocess…”
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  17. 17

    Electrode dependence of resistance switching in polycrystalline NiO films by Seo, S., Lee, M. J., Kim, D. C., Ahn, S. E., Park, B.-H, Kim, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., Kim, J.-S., Choi, J. S., Lee, J. H., Jeon, S. H., Hong, S. H., Park, B. H.

    Published in Applied physics letters (26-12-2005)
    “…We investigated resistance switching in top-electrode/ Ni O ∕ Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt ∕ Ni O ∕ Pt and Au ∕ Ni O ∕…”
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    Control of carbon nanotube morphology by change of applied bias field during growth by Chen, L.-H., AuBuchon, J. F., Gapin, A., Daraio, C., Bandaru, P., Jin, S., Kim, D. W., Yoo, I. K., Wang, C. M.

    Published in Applied physics letters (29-11-2004)
    “…Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical…”
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    Measurement of longitudinal spin asymmetries for weak boson production in polarized proton-proton collisions at RHIC by Adamczyk, L, Adkins, J K, Agakishiev, G, Aggarwal, M M, Ahammed, Z, Alekseev, I, Alford, J, Anson, C D, Aparin, A, Arkhipkin, D, Aschenauer, E C, Averichev, G S, Balewski, J, Banerjee, A, Beavis, D R, Bellwied, R, Bhasin, A, Bhati, A K, Bhattarai, P, Bichsel, H, Bielcik, J, Bielcikova, J, Bland, L C, Bordyuzhin, I G, Borowski, W, Bouchet, J, Brandin, A V, Brovko, S G, Bültmann, S, Bunzarov, I, Burton, T P, Butterworth, J, Caines, H, Calderón de la Barca Sánchez, M, Campbell, J M, Cebra, D, Cendejas, R, Cervantes, M C, Chaloupka, P, Chang, Z, Chattopadhyay, S, Chen, H F, Chen, J H, Chen, L, Cheng, J, Cherney, M, Chikanian, A, Christie, W, Chwastowski, J, Codrington, M J M, Contin, G, Cramer, J G, Crawford, H J, Cui, X, Das, S, Davila Leyva, A, De Silva, L C, Debbe, R R, Dedovich, T G, Deng, J, Derevschikov, A A, Derradi de Souza, R, Dhamija, S, di Ruzza, B, Didenko, L, Dilks, C, Ding, F, Djawotho, P, Dong, X, Drachenberg, J L, Draper, J E, Du, C M, Dunkelberger, L E, Dunlop, J C, Efimov, L G, Engelage, J, Engle, K S, Eppley, G, Eun, L, Evdokimov, O, Eyser, O, Fatemi, R, Fazio, S, Fedorisin, J, Filip, P, Finch, E, Fisyak, Y, Flores, C E, Gagliardi, C A, Gangadharan, D R, Garand, D, Geurts, F, Gibson, A, Girard, M, Gliske, S, Greiner, L, Grosnick, D, Gunarathne, D S, Guo, Y, Gupta, A

    Published in Physical review letters (15-08-2014)
    “…We report measurements of single- and double-spin asymmetries for W^{±} and Z/γ^{*} boson production in longitudinally polarized p+p collisions at sqrt[s]=510 …”
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