Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Radical-enhanced atomic layer deposition uses oxygen radicals generated by a remote microwave-induced plasma as an oxidant to change the surface reactions of the alternately supplied trimethylaluminum precursor and oxygen radicals on a Ge substrate, which leads to the spontaneous formation of an alu...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 34; no. 2
Main Authors: Fukuda, Yukio, Yamada, Daichi, Yokohira, Tomoya, Yanachi, Kosei, Yamamoto, Chiaya, Yoo, Byeonghak, Yamanaka, Junji, Sato, Tetsuya, Takamatsu, Toshiyuki, Okamoto, Hiroshi
Format: Journal Article
Language:English
Published: United States 01-03-2016
Subjects:
ALUMINIUM
ALUMINIUM COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
DEPOSITION
GERMANATES
IRRADIATION
LANGMUIR PROBE
LAYERS
MICROWAVE RADIATION
OXYGEN
PLASMA
PLASMA POTENTIAL
RADICALS
SUBSTRATES
SURFACES
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Summary:Radical-enhanced atomic layer deposition uses oxygen radicals generated by a remote microwave-induced plasma as an oxidant to change the surface reactions of the alternately supplied trimethylaluminum precursor and oxygen radicals on a Ge substrate, which leads to the spontaneous formation of an aluminum germanate layer. In this paper, the effects that low-energy ions, supplied from a remote microwave plasma to the substrate along with the oxygen radicals, have on the surface reactions were studied. From a comparative study of aluminum oxide deposition under controlled ion flux irradiation on the deposition surface, it was found that the ions enhance the formation of the aluminum germanate layer. The plasma potential measured at the substrate position by the Langmuir probe method was 5.4 V. Assuming that the kinetic energy of ions arriving at the substrate surface is comparable to that gained by this plasma potential, such ions have sufficient energy to induce exchange reactions of surface-adsorbed Al atoms with the underlying Ge atoms without causing significant damage to the substrate. This ion-induced exchange reaction between Al and Ge atoms is inferred to be the background kinetics of the aluminum germanate formation by radical-enhanced atomic layer deposition.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4932039