Search Results - "Yong, Yoong Hooi"
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Wafer Level Variability Improvement by Spatial Source/Drain Activation and Ion Implantation Super Scan for FinFET Technology
Published in IEEE transactions on semiconductor manufacturing (01-08-2018)“…In this paper, CMOS wafer level ring oscillator frequency variability improvement >40% is demonstrated by either spatial source/drain activation or ion…”
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Journal Article -
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Characterization of tunneling current and breakdown voltage of advanced CMOS gate oxide
Published in 2004 IEEE International Conference on Semiconductor Electronics (2004)“…Scaling down of the CMOS technology requires ultra thin oxide to meet the scaling of gate length. Gate oxide reliability becomes important as the gate oxide…”
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Conference Proceeding