Search Results - "Yoder, P.D."

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells by Jae-Hyun Ryou, Yoder, P.D., Jianping Liu, Lochner, Z., Hyunsoo Kim, Suk Choi, Hee Jin Kim, Dupuis, R.D.

“…This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for In x Ga 1- x…”
Get full text

Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD by Shyh-Chiang Shen, Yun Zhang, Dongwon Yoo, Jae-Boum Limb, Jae-Hyun Ryou, Yoder, P.D., Dupuis, R.D.

“…We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes…”
Get full text

Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN by Sridharan, S., Yoder, P.D.

“…The theoretical calculation of transient electron velocity overshoot in wurtzite c -axis GaN indicates a higher transient overshoot peak for transport in the…”
Get full text

A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance by Huapu Pan, Campbell, J.C., Beling, A., Hao Chen, Yoder, P.D.

“…Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup…”
Get full text

Bandwidth and Charge Balancing of Partially Depleted Absorber Photodiodes by Yoder, P.D.

“…Linearized moments of the Boltzmann transport equation are shown to imply a new equivalent circuit model for partially depleted absorber photodiodes…”
Get full text

Linear theory of the quasi-unipolar photodiode by Yoder, P.D., Flynn, E.J.

“…Quasi-unipolar (QU) operation, in which unequal numbers of electrons and holes participate in the photocurrent, is proposed as a strategy for optimizing III-V…”
Get full text

Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell by Butt, N.Z., Yoder, P.D., Alam, M.A.

“…We model the soft error trends and total ionizing dose (TID) effects in floating body capacitorless DRAM (Z-RAM) cell. We find that soft error rates (SER) in…”
Get full text

Tablet PC Technology for the Enhancement of Synchronous Distributed Education by Moore, E., Utschig, T.T., Haas, K.A., Klein, B., Yoder, P.D., Ying Zhang, Hayes, M.H.

“…In this paper, we describe how tablet PCs are being used at Georgia Tech Savannah (GTS) to improve student learning in a distributed classroom environment. The…”
Get full text

Perfectly matched layer boundary conditions for quantum phase space transport by Narayanan, T.V., Yoder, P.D.

“…The use of a perfectly matched layer absorbing boundary condition for solutions of the Wigner transport equation is proposed. The formulation of the perfectly…”
Get full text

Design Strategies for InGaN-Based Green Lasers by Venkatachalam, A., Klein, B., Jae-Hyun Ryou, Shyh-Chiang Shen, Dupuis, R.D., Yoder, P.D.

“…A design parameter subspace is explored to suggest epitaxial layer structures which maximize gain spectral density at a target wavelength for green In ¿ Ga 1-¿…”
Get full text

Impact of oxide damage on the light emission properties of MOS tunnel structures by Asli, N., Shulekin, A.F., Yoder, P.D., Vexler, M.I., Grekhov, I.V., Seegebrecht, P.

“…For the p-Si, n-Si and n/p +-Si MOS tunnel diodes with a sub-3 nm insulator layer, the interrelation between oxide degradation, changes in current–voltage…”
Get full text

High-Speed Photodetection Exploiting Quasi-Unipolar Charge Transport by Yoder, P.D.

“…Theoretical and experimental analysis of high-speed quasi-unipolar photodiode operation is presented. Design optimization is demonstrated to lead to…”
Get full text

Threshold energies in the light emission characteristics of silicon MOS tunnel diodes by Asli, N., Vexler, M.I., Shulekin, A.F., Yoder, P.D., Grekhov, I.V., Seegebrecht, P.

“…Hot electron luminescence of MOS tunnel structures with sub-3 nm oxide layer on p-Si is experimentally studied. Radiation spectra are shown to exhibit…”
Get full text

Optimized terminal current calculation for Monte Carlo device simulation by Yoder, P.D., Gartner, K., Krumbein, U., Fichtner, W.

“…We present a generalized Ramo-Shockley theorem (GRST) for the calculation of time-dependent terminal currents in multidimensional charge transport calculations…”
Get full text

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon by Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., Higman, J.M., Iizuka, T., Jungemann, C., Kamakura, Y., Kosina, H., Kunikiyo, T., Laux, S.E., Hongchin Lin, Maziar, C., Mizuno, H., Peifer, H.J., Ramaswamy, S., Sano, N., Scrobohaci, P.G., Selberherr, S., Takenaka, M., Ting-Wei Tang, Taniguchi, K., Thobel, J.L., Thoma, R., Tomizawa, K., Tomizawa, M., Vogelsang, T., Shiuh-Luen Wang, Xiaolin Wang, Chiang-Sheng Yao, Yoder, P.D., Yoshii, A.

“…In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron…”
Get full text

Overview of luminescence from MOS tunnel devices by Asli, N., Shulekin, A.F., Yoder, P.D., Vexler, M.I., Grekhov, I.V., Seegebrecht, P.

“…The physical origin, observation conditions, simulation results and measured spectra of luminescence from MOS structures with a sub-3 nm oxide, are considered…”
Get full text

The influence of nonlinear capacitance and responsivity on the linearity of a modified uni-traveling carrier photodiode by Huapu Pan, Beling, A., Hao Chen, Campbell, J.C., Yoder, P.D.

“…Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup…”
Get full text

Nitride Band-Structure Model in a Quantum Well Laser Simulator by Venkatachalam, A., Yoder, P.D., Klein, B., Kulkarni, A.

“…The two-dimensional quantum well laser simulator VLS (visible laser simulator) has been extended to simulate III- V nitride based lasers. In this paper, we…”
Get full text

Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs by Bufler, F.M., Yoder, P.D., Fichtner, W.

“…The authors consider the strain dependence of FET performance in the nonlinear operation regime by full-band Monte Carlo (FBMC) simulation and investigate how…”
Get full text

Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering by Bufler, F.M., Yoder, P.D., Fichtuer, W.

“…A phase-space-step trajectory calculation within the scheme of self-scattering is presented. In addition, impurity scattering is approximated by the inverse…”
Get full text