Search Results - "Yiwei Duan"

Refine Results
  1. 1

    Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation by Duan, Yiwei, Gao, Haixia, Yang, Yintang

    Published in Applied physics letters (21-10-2024)
    “…In this paper, the switching variability of SiNx-based RRAM with reactive metal electrodes in terms of Joule heating dissipation was analyzed. The electrode…”
    Get full text
    Journal Article
  2. 2

    Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity by Yang, Yintang, Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Guo, Jingshu, Yang, Mei, Ma, Xiaohua

    Published in Applied physics letters (13-03-2023)
    “…In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent…”
    Get full text
    Journal Article
  3. 3

    Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM by Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (15-08-2022)
    “…This Letter investigates the effect of non-inert electrode thickness on the performance of complementary resistive switching (CRS). Five devices with different…”
    Get full text
    Journal Article
  4. 4

    In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device by Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (27-06-2022)
    “…This paper reported the Pt/AlOxNy/Ta structure with oxygen scavenging metal Ta as a top electrode in order to achieve excellent data storage and the artificial…”
    Get full text
    Journal Article
  5. 5

    Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals by Jiang, Feng, Duan, Yiwei, Song, Jiawen, Luo, Zhe

    Published in Energies (Basel) (01-06-2023)
    “…As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous…”
    Get full text
    Journal Article
  6. 6

    Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM by Duan, Yiwei, Gao, Haixia, Qian, Mengyi, Sun, Yuxin, Wu, Shuliang, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (16-05-2022)
    “…At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in…”
    Get full text
    Journal Article
  7. 7

    The influence of device structure on resistance switching in PbS QDs film inserted RRAM by Sun, Yuxin, Gao, Haixia, Wu, Shuliang, Duan, Yiwei, Qian, Mengyi, Guo, Jingshu, Yang, Mei, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (18-07-2022)
    “…The introduction of PbS QD (quantum dot) films has been proved, dramatically, to optimize the resistive switching (RS) performance in oxide resistive random…”
    Get full text
    Journal Article
  8. 8

    Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM by Qian, Mengyi, Gao, Haixia, Duan, Yiwei, Guo, Jingshu, Bai, Yifan, Zhu, Shilong, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (17-07-2023)
    “…This Letter is about the role of the bottom electrode in the resistive switching of SiNx-based resistive random-access memory. Titanium nitride (TiN) and…”
    Get full text
    Journal Article
  9. 9

    Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing by Shen, Xuping, Gao, Haixia, Duan, Yiwei, Sun, Yuxin, Guo, Jingshu, Yu, Zhenxi, Wu, Shuliang, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (03-05-2021)
    “…This Letter studies the effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing. We compared I–V…”
    Get full text
    Journal Article
  10. 10

    Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM by Duan, Yiwei, Gao, Haixia, Guo, Jingshu, Yang, Mei, Yu, Zhenxi, Shen, Xuping, Wu, Shuliang, Sun, Yuxin, Ma, Xiaohua, Yang, Yintang

    Published in Applied physics letters (04-01-2021)
    “…This Letter studies the effect of the nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based resistive random access…”
    Get full text
    Journal Article
  11. 11

    LncRNA495810 Promotes Proliferation and Migration of Hepatocellular Carcinoma Cells by Interacting with FABP5 by Wu, Haili, Yuan, Haiyan, Duan, Yiwei, Li, Guangjun, Du, Jin'e, Wang, Panfeng, Li, Zhuoyu

    Published in Biology (Basel, Switzerland) (01-08-2024)
    “…Hepatocellular carcinoma (HCC) is one of the malignant tumors with high morbidity and mortality. Long non-coding RNAs (lncRNAs) are frequently dysregulated in…”
    Get full text
    Journal Article
  12. 12

    Forest top canopy bacterial communities are influenced by elevation and host tree traits by Duan, Yiwei, Siegenthaler, Andjin, Skidmore, Andrew K, Chariton, Anthony A, Laros, Ivo, Rousseau, Mélody, De Groot, G Arjen

    Published in Environmental microbiome (05-04-2024)
    “…The phyllosphere microbiome is crucial for plant health and ecosystem functioning. While host species play a determining role in shaping the phyllosphere…”
    Get full text
    Journal Article
  13. 13

    Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors by Xu, H., Duan, Y., Hesler, J.L., Crowe, T.W., Weikle, R.W.

    “…A heterostructure barrier varactor subharmonic upconverter is investigated for the first time. Odd sidebands are suppressed due to the symmetric…”
    Get full text
    Journal Article
  14. 14

    Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators by Song, Kun, Wang, Shuang, Duan, Yiwei, Ling, Xiang, Schiavone, Peter

    Published in Physical review letters (17-11-2023)
    “…Discrepancies between experimental and theoretical results in the study of thermoelectric generators (TEGs) have been a major long-standing problem in…”
    Get full text
    Journal Article
  15. 15

    Nonlinear thermo-acoustic response and fatigue prediction of three-dimensional braided composite panels in supersonic flow by Duan, Yiwei, Shi, Duoqi, Liu, Changqi, Yang, Xiaoguang

    Published in Composite structures (01-07-2023)
    “…In this paper, a novel aerodynamic-acoustic coupling model to investigate the influence of aeroelastic effects on the thermo-acoustic response of…”
    Get full text
    Journal Article
  16. 16

    A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler by Qun Xiao, Yiwei Duan, Hesler, J.L., Crowe, T.W., Weikle, R.M.

    “…This letter reviews the design, construction, and measurement of a 210 GHz heterostructure barrier varactor frequency quintupler. The quintupler utilizes…”
    Get full text
    Journal Article
  17. 17
  18. 18

    Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH[sub.3]NH[sub.3]PbBr[sub.3] Crystals by Jiang, Feng, Duan, Yiwei, Song, Jiawen, Luo, Zhe

    Published in Energies (Basel) (01-06-2023)
    “…As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous…”
    Get full text
    Journal Article
  19. 19

    SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration by Zhu, Shilong, Gao, Haixia, Duan, Yiwei, Bai, Yifan, Qiu, Xuan, Ma, Xiaohua, Yang, Yintang

    “…Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiNx‐based digital‐type RRAM with…”
    Get full text
    Journal Article
  20. 20

    SiN x ‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration by Zhu, Shilong, Gao, Haixia, Duan, Yiwei, Bai, Yifan, Qiu, Xuan, Ma, Xiaohua, Yang, Yintang

    “…Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiN x ‐based digital‐type RRAM with…”
    Get full text
    Journal Article