Search Results - "Yiwei Duan"
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Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation
Published in Applied physics letters (21-10-2024)“…In this paper, the switching variability of SiNx-based RRAM with reactive metal electrodes in terms of Joule heating dissipation was analyzed. The electrode…”
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2
Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity
Published in Applied physics letters (13-03-2023)“…In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent…”
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3
Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM
Published in Applied physics letters (15-08-2022)“…This Letter investigates the effect of non-inert electrode thickness on the performance of complementary resistive switching (CRS). Five devices with different…”
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4
In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device
Published in Applied physics letters (27-06-2022)“…This paper reported the Pt/AlOxNy/Ta structure with oxygen scavenging metal Ta as a top electrode in order to achieve excellent data storage and the artificial…”
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5
Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH3NH3PbBr3 Crystals
Published in Energies (Basel) (01-06-2023)“…As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous…”
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6
Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM
Published in Applied physics letters (16-05-2022)“…At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in…”
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7
The influence of device structure on resistance switching in PbS QDs film inserted RRAM
Published in Applied physics letters (18-07-2022)“…The introduction of PbS QD (quantum dot) films has been proved, dramatically, to optimize the resistive switching (RS) performance in oxide resistive random…”
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8
Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM
Published in Applied physics letters (17-07-2023)“…This Letter is about the role of the bottom electrode in the resistive switching of SiNx-based resistive random-access memory. Titanium nitride (TiN) and…”
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9
Effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing
Published in Applied physics letters (03-05-2021)“…This Letter studies the effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing. We compared I–V…”
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10
Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM
Published in Applied physics letters (04-01-2021)“…This Letter studies the effect of the nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based resistive random access…”
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11
LncRNA495810 Promotes Proliferation and Migration of Hepatocellular Carcinoma Cells by Interacting with FABP5
Published in Biology (Basel, Switzerland) (01-08-2024)“…Hepatocellular carcinoma (HCC) is one of the malignant tumors with high morbidity and mortality. Long non-coding RNAs (lncRNAs) are frequently dysregulated in…”
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12
Forest top canopy bacterial communities are influenced by elevation and host tree traits
Published in Environmental microbiome (05-04-2024)“…The phyllosphere microbiome is crucial for plant health and ecosystem functioning. While host species play a determining role in shaping the phyllosphere…”
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13
Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors
Published in IEEE transactions on microwave theory and techniques (01-10-2006)“…A heterostructure barrier varactor subharmonic upconverter is investigated for the first time. Odd sidebands are suppressed due to the symmetric…”
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14
Effect of Inevitable Heat Leap on the Conversion Efficiency of Thermoelectric Generators
Published in Physical review letters (17-11-2023)“…Discrepancies between experimental and theoretical results in the study of thermoelectric generators (TEGs) have been a major long-standing problem in…”
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15
Nonlinear thermo-acoustic response and fatigue prediction of three-dimensional braided composite panels in supersonic flow
Published in Composite structures (01-07-2023)“…In this paper, a novel aerodynamic-acoustic coupling model to investigate the influence of aeroelastic effects on the thermo-acoustic response of…”
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16
A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler
Published in IEEE microwave and wireless components letters (01-04-2004)“…This letter reviews the design, construction, and measurement of a 210 GHz heterostructure barrier varactor frequency quintupler. The quintupler utilizes…”
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17
Snap-through response of three-dimensional braided composite panels in thermal-acoustic-aero coupled field
Published in European journal of mechanics, A, Solids (01-11-2023)Get full text
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18
Effect of GaN-Based Distributed Bragg Reflector on Optical Properties of CH[sub.3]NH[sub.3]PbBr[sub.3] Crystals
Published in Energies (Basel) (01-06-2023)“…As a photoelectric material, the luminescent efficiency improvement of organic–inorganic perovskite material is a hot topic. This work fabricated a nanoporous…”
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19
SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration
Published in Physica status solidi. A, Applications and materials science (01-05-2024)“…Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiNx‐based digital‐type RRAM with…”
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20
SiN x ‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration
Published in Physica status solidi. A, Applications and materials science (01-05-2024)“…Herein, a digital–analog hybrid resistive random‐access memory (RRAM) is prepared by integrating the structurally similar SiN x ‐based digital‐type RRAM with…”
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