Search Results - "Yitamben, E. N."

  • Showing 1 - 14 results of 14
Refine Results
  1. 1

    Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy by Yitamben, E N, Butera, R E, Swartzentruber, B S, Simonson, R J, Misra, S, Carroll, M S, Bussmann, E

    Published in New journal of physics (15-11-2017)
    “…Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition…”
    Get full text
    Journal Article
  2. 2

    L-Tryptophan on Cu(111): engineering a molecular labyrinth driven by indole groups by Yitamben, E N, Clayborne, A, Darling, Seth B, Guisinger, N P

    Published in Nanotechnology (12-06-2015)
    “…The present article investigates the adsorption and molecular orientation of L-Tryptophan, which is both an essential amino acid important for protein…”
    Get more information
    Journal Article
  3. 3

    Atomic-Scale Investigation of Graphene Grown on Cu Foil and the Effects of Thermal Annealing by Cho, Jongweon, Gao, Li, Tian, Jifa, Cao, Helin, Wu, Wei, Yu, Qingkai, Yitamben, Esmeralda N, Fisher, Brandon, Guest, Jeffrey R, Chen, Yong P, Guisinger, Nathan P

    Published in ACS nano (24-05-2011)
    “…We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the…”
    Get full text
    Journal Article
  4. 4

    Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy by Yitamben, E. N, Butera, R. E, Swartzentruber, B. S, Simonson, R. J, Misra, S, Carroll, M. S, Bussmann, E

    Published 16-06-2017
    “…Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition…”
    Get full text
    Journal Article
  5. 5

    Surface morphology and electronic structure of bulk single crystal β -Ga 2 O 3 ( 100 ) by Lovejoy, T. C., Yitamben, E. N., Shamir, N., Morales, J., Villora, E. G., Shimamura, K., Zheng, S., Ohuchi, F. S., Olmstead, M. A.

    Published in Applied physics letters (26-02-2009)
    “…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide ( β…”
    Get full text
    Journal Article
  6. 6

    Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100) by Lovejoy, T. C., Yitamben, E. N., Shamir, N., Morales, J., Villora, E. G., Shimamura, K., Zheng, S., Ohuchi, F. S., Olmstead, M. A.

    Published in Applied physics letters (23-02-2009)
    “…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide…”
    Get full text
    Journal Article
  7. 7

    MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A.

    Published in Applied physics letters (14-12-2009)
    “…Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1–2 nm, after which…”
    Get full text
    Journal Article
  8. 8

    MnSe phase segregation during heteroepitaxy of Mn doped Ga 2 Se 3 on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A.

    Published in Applied physics letters (17-12-2009)
    “…Heteroepitaxial thin films of Mn-doped Ga 2 Se 3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm, after…”
    Get full text
    Journal Article
  9. 9

    MnSe phase segregation during heteroepitaxy of Mn doped Ga{sub 2}Se{sub 3} on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A., Univ. of Washington, Center for Nanotechnology

    Published in Applied physics letters (14-12-2009)
    “…Heteroepitaxial thin films of Mn-doped Ga{sub 2}Se{sub 3} are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm,…”
    Get full text
    Journal Article
  10. 10
  11. 11

    Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001) by Yitamben, E.N., Arena, D., Lovejoy, T.C., Pakhomov, A.B., Heald, S.M., Negusse, E., Ohuchi, F.S., Olmstead, M.A.

    “…Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in…”
    Get full text
    Journal Article
  12. 12
  13. 13
  14. 14