Search Results - "Yitamben, E N"
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Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
Published in New journal of physics (15-11-2017)“…Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition…”
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L-Tryptophan on Cu(111): engineering a molecular labyrinth driven by indole groups
Published in Nanotechnology (12-06-2015)“…The present article investigates the adsorption and molecular orientation of L-Tryptophan, which is both an essential amino acid important for protein…”
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Atomic-Scale Investigation of Graphene Grown on Cu Foil and the Effects of Thermal Annealing
Published in ACS nano (24-05-2011)“…We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the…”
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Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
Published 16-06-2017“…Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition…”
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5
Surface morphology and electronic structure of bulk single crystal β -Ga 2 O 3 ( 100 )
Published in Applied physics letters (26-02-2009)“…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide ( β…”
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Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
Published in Applied physics letters (23-02-2009)“…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide…”
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7
MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001)
Published in Applied physics letters (14-12-2009)“…Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1–2 nm, after which…”
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MnSe phase segregation during heteroepitaxy of Mn doped Ga 2 Se 3 on Si(001)
Published in Applied physics letters (17-12-2009)“…Heteroepitaxial thin films of Mn-doped Ga 2 Se 3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm, after…”
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MnSe phase segregation during heteroepitaxy of Mn doped Ga{sub 2}Se{sub 3} on Si(001)
Published in Applied physics letters (14-12-2009)“…Heteroepitaxial thin films of Mn-doped Ga{sub 2}Se{sub 3} are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm,…”
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Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001)
Published in Physical review. B, Condensed matter and materials physics (18-04-2011)Get full text
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Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)
Published in Physical review. B, Condensed matter and materials physics (28-01-2011)“…Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in…”
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One-dimensional electronic states in Ga 2 Se 3 on Si(001):As
Published in Physical review. B, Condensed matter and materials physics (01-06-2010)Get full text
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Surface morphology of Cr : Ga 2 Se 3 heteroepitaxy on Si(001)
Published in Physical review. B, Condensed matter and materials physics (01-08-2009)Get full text
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