Search Results - "Yitae Kim"
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A 1/2.8-inch 24Mpixel CMOS image sensor with 0.9μm unit pixels separated by full-depth deep-trench isolation
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…CMOS image sensors (CIS) have attracted much attention for the emerging mobile market, and the demand of high-resolution image sensors in mobile applications…”
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Conference Proceeding -
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Factors influencing air passengers' intention to purchase voluntary carbon offsetting programs: The moderating role of environmental knowledge
Published in Journal of air transport management (01-07-2024)“…This paper aims to investigate the factors that influence air passengers' intention to purchase the VCO program by applying the extended Theory of Planned…”
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Journal Article -
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A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…As pixel sizes continue to scale down, backside-illuminated (BSI) technology has been recently adopted as a solution to improve pixel SNR performance. In…”
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Conference Proceeding
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A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation
Published in IEEE journal of solid-state circuits (01-11-2021)“…A 1.2-Mpixel indirect time-of-flight (ToF) CMOS image sensor is presented to lower peak current and to cancel out multi-user interference. The proposed 4-tap…”
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Journal Article -
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A 0.6-V 86.5-dB DR 40-kHz BW Inverter-Based Continuous-Time Delta-Sigma Modulator With PVT-Robust Body-Biasing
Published in IEEE solid-state circuits letters (2021)“…This letter presents a low-power continuous-time delta-sigma modulator (CTDSM) that operates at a 0.6-V supply. The loop filter of the CTDSM is realized with…”
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Journal Article -
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The “flat tax(es)”: principles and experience
Published in International tax and public finance (01-12-2008)“…This paper reviews experience with the ‘flat taxes’ that have been adopted in many countries in recent years. It stresses that they differ fundamentally, and…”
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Journal Article -
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7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13-02-2021)“…For years, there has been a strong drive for sub-micron pixel development, in spite of reaching the visible light diffraction limit, because a smaller pixel…”
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Conference Proceeding -
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7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13-02-2021)“…The evolution of 3D depth-sensing technology enables various applications in mobile devices, from conventional photography enhancement (e.g., autofocus and…”
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Conference Proceeding -
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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01-02-2020)“…As the smart mobile device market continues to grow and the number of cameras per device rapidly increases, demand for CMOS image sensors (CIS) also increases…”
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Conference Proceeding -
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Ultimate Wafer-level Lens Integration and Optimization for High-end Active Pixel Sensor Application
Published in 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (28-05-2024)“…This paper presents the design and optimization of both microlenses and metalenses for an active pixel sensor array. To achieve the highest quality microlens…”
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Conference Proceeding -
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A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12-12-2020)“…A 0.8μm-pitch 108 megapixels (Mp) ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications. The Nonacell was developed through a…”
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Conference Proceeding -
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7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate
Published in 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) (01-02-2014)“…According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching…”
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Conference Proceeding -
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A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12-12-2020)“…A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well…”
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Conference Proceeding -
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Why do firms hoard cash? Evidence from Korean Chaebol
Published 01-01-2001“…In this paper, I investigate the determinants of cash holdings for a sample of 3618 non-financial firms listed in Korea Stock Exchange for 1991–1999 period…”
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Dissertation -
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A 0.8 µm Smart Dual Conversion Gain Pixel for 64 Megapixels CMOS Image Sensor with 12k e- Full-Well Capacitance and Low Dark Noise
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01-12-2019)“…A 0.8 μm-pitch 64 megapixels ultrahigh-resolution CMOS image sensor has been demonstrated for mobile applications for the first time. Full-well capacity (FWC)…”
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Conference Proceeding -
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Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited)
Published in 2008 IEEE International Electron Devices Meeting (01-12-2008)“…As pixel size of image sensors shrinks down rapidly, we are reaching technical barrier to get the required low light performance. In this paper, recent…”
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Conference Proceeding