Search Results - "Yinhong Luo"

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation by Sheng, Jiangkun, Qiu, Mengtong, Xu, Peng, Ding, Lili, Luo, Yinhong, Yao, Zhibin, Zhang, Fengqi, Gou, Shilong, Wang, Zujun, Xue, Yuanyuan

“…In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND…”
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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects by Jiangkun Sheng, Peng Xu, Mengtong Qiu, Yinhong Luo, Lili Ding, Zhibin Yao, Baoping He, Shilong Gou, Wuying Ma

“…In order to develop the shift model of threshold voltage distribution of the memory array in a radiation environment based on the bit upset test results of…”
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Mutual interference induced by single event effects in CMOS circuits by Ding, Lili, Chen, Wei, Wang, Tan, Zhang, Fengqi, Luo, Yinhong, Yang, Guo-Qing

“…Single event effect (SEE) induced mutual interference in CMOS circuits, including single event (SE) induced coupling effects (crosstalk) and modulation in…”
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Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation by Rongmei Chen, Fengqi Zhang, Wei Chen, Lili Ding, Xiaoqiang Guo, Chen Shen, Yinhong Luo, Wen Zhao, Lisang Zheng, Hongxia Guo, Yinong Liu, Fleetwood, Daniel M.

“…Single-event multiple transients (SEMTs) are investigated using an on-chip self-triggered circuit. Measured results for inverter chains of two layout designs,…”
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Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation by Pan, XiaoYu, Guo, HongXia, Feng, YaHui, Liu, YiNong, Zhang, JinXin, Li, Zhuang, Luo, YinHong, Zhang, FengQi, Wang, Tan, Zhao, Wen, Ding, LiLi, Xu, JingYan

“…The single-photon absorption induced single event transient in the silicon-germanium heterojunction bipolar transistor is investigated. The laser wavelength…”
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Proton-induced single-event effect and influence of annealing on multiple feature size NAND flash memory by Peng, Cong, Chen, Wei, Luo, Yinhong, Zhang, Fengqi, Tang, Xiaobin, Guo, Xiaoqiang, Sheng, Jiangkun, Ding, Lili, Wang, Zibo

“…The proton-induced single-event effect sensitivity of multiple feature size NAND flash memories has been studied. The single-event upset cross section of…”
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Influence of the STI on Single-Event Transients in Bulk FinFETs by Lu, Chao, Chen, Wei, Luo, Yinhong, Ding, Lili, Zhang, Fengqi

“…The single-event transient (SET) produced by laser irradiation in a bulk FinFET is found to have a large plateau current in the tail. 3D technology…”
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Full-stack vulnerability analysis of the cloud-native platform by Zeng, Qingyang, Kavousi, Mohammad, Luo, Yinhong, Jin, Ling, Chen, Yan

“…Cloud-native systems have recently emerged as one of the most popular platforms for application development, providing lightweight virtualization, simplified…”
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The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM by Luo, Yinhong, Zhang, Fengqi, Chen, Wei, Ding, Lili, Wang, Tan

“…The influence of ion track characteristics on single-event upsets (SEU) and multiple-cell upsets (MCUs) is investigated in 65-nm static randon access memory…”
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Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM by Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu, Guo, Hongxia, Wang, Yuanming

“…The impact of the total ionizing dose (TID) on a low energy proton single event upset (SEU) in a 65-nm static random access memory (SRAM) is investigated based…”
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Low-energy proton-induced single event effect in NAND flash memories by Peng, Cong, Chen, Wei, Luo, Yinhong, Zhang, Fengqi, Tang, Xiaobin, Wang, Zibo, Ding, Lili, Guo, Xiaoqiang

“…In this paper, the low-energy proton-induced single event effect sensitivity of multiple feature size NAND flash memories has been investigated. Under 0.41 MeV…”
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Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation by Ding, Lili, Chen, Wei, Wang, Tan, Chen, Rongmei, Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu, Sun, Huabo, Chen, Lei

“…The dependence of single-event transients on strike location is studied and integrated into the bias-dependent single-event model for circuit simulation. Two…”
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A Statistical Method for MCU Extraction Without the Physical-to-Logical Address Mapping by Wang, Xun, Ding, Lili, Luo, Yinhong, Chen, Wei, Zhang, Fengqi, Guo, Xiaoqiang

“…A statistical method was proposed to extract multiple-cell upsets (MCUs) from single-event upsets (SEUs) without the physical-to-logical address mapping of the…”
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New method for predicting heavy ion-induced SEE cross-section based on proton experimental data by Chen, Zhaoqun, Chen, Wei, Luo, Yinhong, Tang, Xiaobin, Zhang, Fengqi, Hu, Yang, Guo, Xiaoqiang, Yang, Huajin, Ding, Lili

“…A simple method for the prediction of the heavy ion-induced single event effect cross-section based on proton experimental data has been proposed, which is…”
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Analyzing single event upset on Kintex-7 Field-Programmable-Gate-Array with random fault injection method by Wang, Zibo, Chen, Wei, Yao, Zhibin, Zhang, Fengqi, Luo, Yinhong, Tang, Xiaobin, Peng, Cong, Ding, Lili, Guo, Xiaoqiang

“…In this paper, the bitstream of 28 nm field-programmable-gate-array was resolved. The relationship between the frame address and the resource was obtained. The…”
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Optimized Simulation Analysis for Single Event Transient in Nanoscale Logical Cells by WANG Tan,  DING Lili,  LUO Yinhong,  ZHAO Wen,  ZHANG Fengqi,  XU Jingyan

“…Single event transient (SET) induced by high energy single particle radiation is the main threat to space application electronic system reliability. The…”
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Proton-induced single-event effects on 28 nm Kintex-7 FPGA by Wang, Zibo, Chen, Wei, Yao, Zhibin, Zhang, Fengqi, Luo, Yinhong, Tang, Xiaobin, Guo, Xiaoqiang, Ding, Lili, Peng, Cong

“…Proton experiments were performed on Kintex-7 XC7K70T field programmable gate array by using a self-developed test system at EN tandem accelerator in Peking…”
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Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model by Ding, Lili, Chen, Wei, Guo, Hongxia, Wang, Tan, Chen, Rongmei, Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu

“…With technology scaling, a common and efficient strategy to improve the soft error vulnerability of sensitive nodes is to place well/substrate contacts…”
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ESA Next Generation Radiation Monitor by Desorgher, Laurent, Hajdas, Wojciech, Britvitch, Ilia, Egli, Ken, Xiaoqiang Guo, Yinhong Luo, Boscher, Daniel, Chastellain, Frédéric, Pereira, Carlos, Muff, Reto, Maehlum, Gunnar, Meier, Dirk, Nieminen, Petteri

“…The ESA Next Generation Radiation Monitor (NGRM), currently under development, will be the successor of the ESA Standard Radiation Environment Monitor (SREM)…”
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Improved on-chip self-triggered single-event transient measurement circuit design and applications by Chen, Rongmei, Chen, Wei, Guo, Xiaoqiang, Shen, Chen, Zhang, Fengqi, Zheng, Lisang, Zhao, Wen, Ding, Lili, Luo, Yinhong, Guo, Hongxia, Wang, Yuanming, Liu, Yinong

“…Single-event transient (SET) induced soft errors are becoming more and more a threat to the reliability of electronic systems in space. The SET pulse width is…”
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