Search Results - "Ying, RS"

Clinical epidemiology and outcome of HIV‐associated talaromycosis in Guangdong, China, during 2011–2017 by Ying, RS, Le, T, Cai, WP, Li, YR, Luo, CB, Cao, Y, Wen, CY, Wang, SG, Ou, X, Chen, WS, Chen, SZ, Guo, PL, Chen, M, Guo, Y, Tang, XP, Li, LH

“…Objectives Talaromycosis is an invasive mycosis endemic to Southeast Asia. This study aimed to investigate the epidemiology, clinical features and prognostic…”
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X-band silicon double-drift IMPATT diodes using multiple epitaxy by Ying, R.S.

“…Silicon double-drift IMPATT diodes made by consecutive epitaxial deposition have been fabricated successfully. Output power in excess of 1.7 W with 10-percent…”
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C-band complementary TRAPATT diodes by Ying, R.S., Fong, T.T.

“…Complementary n + -p junction TRAPATT diodes have been fabricated for C-band operation. Peak power output as high as 27 W with 42.5-percent efficiency has been…”
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Ion-implanted complementary IMPATT diodes for D-band by Lee, D.H., Ying, R.S.

“…Complementary silicon single-drift-region IMPATT diodes designed to operate above 100 GHz have been fabricated with ion-implanted dopant profiles…”
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Millimeter IMPATT Sources for the 130-170-GHz Range by Weller, K.P., Ying, R.S., Lee, D.H.

“…Device and circuit design of silicon IMPATT sources in the 130-170-GHz range is discussed. A 170-GHz source has been developed with 16 mW at the isolator…”
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Y-Band (170-260 GHz) Tunable CW IMPATT Diode Oscillators by Chao, C., Bernick, R.L., Nakaji, E.M., Ying, R.S., Weller, K.P., Lee, D.H.

“…This paper describes circuit, packaging, and device techniques used in the development of tunable CW IMPATT diode oscillators in the 170-260 GHz range. A…”
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Ion implanted X-band IMPATT/TRAPATT back-to-back diodes by Fong, T.T., Ying, R.S., Lee, D.H.

“…High-efficiency pulsed power at X-band frequencies has been generated using back-to-back IMPATT/TRAPATT silicon devices fabricated by ion implantation. Typical…”
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Millimeter-wave pulsed IMPATT diode oscillators by Ying, R.S., English, D.L., Weller, K.P., Nakaji, E.M., Lee, D.H., Bernick, R.L.

“…Double-drift silicon IMPATT diodes were fabricated for pulse source application at 35, 94, and 140 GHz. The diodes were operated with 300 ns pulsewidth and a…”
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High-Efficiency Subharmonic Oscillations from Silicon Diodes at Frequencies up to 6 GHz by Ying, R.S., Mankarious, R.G., Bower, R.W.

“…Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17…”
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