Search Results - "Yi, Jaehyung"

A selective growth of III-nitride by MOCVD for a buried-ridge type structure by Yang, Min, Cho, Meoungwhan, Kim, Chinkyo, Yi, Jaehyung, Jeon, Jina, Khym, Sungwon, Kim, Minhong, Choi, Yoonho, Leem, Shi-Jong, Lee, Yong-Hee

“…We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial…”
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Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy by Kim, Chinkyo, Yi, Jaehyung, Kim, Sungwoo, Hong Kim, Min, Yang, Min, Choi, Yoonho, Yoo, Tae-Kyung, Tai Kim, Seon

“…Anisotropic domain tilting of GaN films prepared by hydride vapor phase epitaxy (HVPE) on GaN/sapphire (0 0 0 1) substrate employing lateral epitaxial…”
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Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask by Kim, Min Hong, Choi, Yoonho, Yi, Jaehyung, Yang, Min, Jeon, Jina, Khym, Sungwon, Leem, Shi-Jong

“…The lateral overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition. SiO2 mask was removed just before coalescence and a…”
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Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy by Kim, Chinkyo, Yang, Min, Lee, Wonsang, Yi, Jaehyung, Kim, Sungwoo, Choi, Yoonho, Yoo, Tae-Kyung, Kim, Seon Tai

“…Heteroepitaxial GaN film was grown on sapphire (0 0 0 1) substrate by hydride vapor-phase epitaxy and it was observed employing scanning electron microscopy…”
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Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film by Kim, Chinkyo, Yi, Jaehyung, Yang, Min, Kim, Minhong, Jeon, Jina, Khym, Sungwon, Cho, Meoungwhan, Choi, Yoonho, Leem, Shi-Jong, Kim, Seon Tai

“…A 150 μm-thick GaN layer was grown by halide vapor phase epitaxy utilizing selective lateral overgrowth on a SiO2-prepatterned sapphire substrate. A series of…”
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Device characteristics of index-guided In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N MQW laser diodes grown by low-pressure metal organic chemical vapor deposition by Chinkyo Kim, Min Yang, Jaehyung Yi, Sungwoo Kim, Yoonho Choi, Tae-Kyung Yoo

“…Device characteristics of index-guided In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N MQW laser diodes were investigated in terms of ridge depth and etching…”
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