Search Results - "Yeo, Chia"
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Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)
Published in Applied physics letters (08-06-2015)“…We investigated the critical thickness (hc) for plastic relaxation of Ge1−xSnx grown by molecular beam epitaxy. Ge1−xSnx films with various Sn mole fraction x…”
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2
Microbial Degradation of Rubber: Actinobacteria
Published in Polymers (17-06-2021)“…Rubber is an essential part of our daily lives with thousands of rubber-based products being made and used. Natural rubber undergoes chemical processes and…”
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3
A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study
Published in IEEE transactions on electron devices (01-07-2020)“…A ladder transmission line model (LTLM) that features capability to eliminate parasitic metal resistance from contact metal and access electrodes, a simple…”
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4
A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification
Published in IEEE transactions on electron devices (01-07-2020)“…In the first part of this two-part article, a ladder transmission line model (LTLM), featuring elimination of parasitic metal resistances and high accuracy for…”
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5
GeSn-on-insulator substrate formed by direct wafer bonding
Published in Applied physics letters (11-07-2016)“…GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge1- x Sn x layer…”
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6
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
Published in IEEE transactions on electron devices (01-08-2017)“…AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion…”
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7
Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity
Published in IEEE transactions on electron devices (01-07-2019)“…A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact…”
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8
Isolation and characterization of bioactive polyacetylenes Panax ginseng Meyer roots
Published in Journal of pharmaceutical and biomedical analysis (30-05-2017)“…•Polyacetylenic compounds isolated from Panax ginseng root typically comprised of non-polar C17 compound have been reported to exhibit bioactive…”
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9
Ballistic Transport Performance of Silicane and Germanane Transistors
Published in IEEE transactions on electron devices (01-05-2014)“…The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane and germanane, respectively,…”
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10
Identification of traditional medicinal plant extracts with novel anti-influenza activity
Published in PloS one (27-11-2013)“…The emergence of drug resistant variants of the influenza virus has led to a need to identify novel and effective antiviral agents. As an alternative to…”
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11
Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials
Published in IEEE transactions on electron devices (01-02-2016)“…We report the ultimate performance of a double-gate ultrathin body (DG-UTB) FET employing materials from group IV, III-V, and 2-D materials based on…”
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12
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
Published in Optics express (16-04-2018)“…We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET)…”
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13
Fermentation of protopanaxadiol type ginsenosides (PD) with probiotic Bifidobacterium lactis and Lactobacillus rhamnosus
Published in Applied microbiology and biotechnology (01-07-2017)“…Ginsenosides are believed to be the principal components behind the pharmacological actions of ginseng, and their bioactive properties are closely related to…”
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14
Plant Essential Oils as Active Antimicrobial Agents
Published in Critical reviews in food science and nutrition (01-01-2014)“…Essential oils derived from plants have been recognized for decades to exhibit biological activities, including antioxidant, anticancer, and antimicrobial…”
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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate
Published in Applied surface science (01-12-2014)“…•Ge0.915Sn0.085 was grown on Ge (001) by molecular beam epitaxy (MBE).•The impact of annealing on surface morphology and Sn composition was studied.•Sn is…”
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16
Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy
Published in Applied physics letters (13-01-2014)“…The complex dielectric function of biaxially strained Ge1−xSnx (0 ≤ x ≤ 0.17) alloys grown on Ge (100) has been determined by spectroscopic ellipsometry from…”
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17
Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion
Published in Physica status solidi. A, Applications and materials science (01-03-2017)“…In order to examine the feasibility of full wide‐bandgap GaN‐based converters in aerospace power conversion applications, this paper proposes a monolithic…”
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18
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
Published in IEEE transactions on electron devices (01-09-2018)“…Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI…”
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19
Identification of Specific Cell-Surface Markers of Adipose-Derived Stem Cells from Subcutaneous and Visceral Fat Depots
Published in Stem cell reports (11-02-2014)“…Adipose-derived stem/stromal cells (ASCs) from the anatomically distinct subcutaneous and visceral depots of white adipose tissue (WAT) differ in their…”
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Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure
Published in Scientific reports (12-05-2017)“…We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge 1− x Sn x ) materials. The digital etch approach consists…”
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