Search Results - "Yeo, Chia"

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  1. 1

    Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001) by Wang, Wei, Zhou, Qian, Yuan, Dong, Tok, Eng Soon, Yee-Chia, Yeo

    Published in Applied physics letters (08-06-2015)
    “…We investigated the critical thickness (hc) for plastic relaxation of Ge1−xSnx grown by molecular beam epitaxy. Ge1−xSnx films with various Sn mole fraction x…”
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  2. 2

    Microbial Degradation of Rubber: Actinobacteria by Basik, Ann, Sanglier, Jean-Jacques, Yeo, Chia, Sudesh, Kumar

    Published in Polymers (17-06-2021)
    “…Rubber is an essential part of our daily lives with thousands of rubber-based products being made and used. Natural rubber undergoes chemical processes and…”
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  3. 3

    A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study by Wu, Ying, Xu, Haiwen, Gong, Xiao, Yeo, Yee-Chia

    Published in IEEE transactions on electron devices (01-07-2020)
    “…A ladder transmission line model (LTLM) that features capability to eliminate parasitic metal resistance from contact metal and access electrodes, a simple…”
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  4. 4

    A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification by Xu, Haiwen, Wu, Ying, Yeo, Yee-Chia, Gong, Xiao

    Published in IEEE transactions on electron devices (01-07-2020)
    “…In the first part of this two-part article, a ladder transmission line model (LTLM), featuring elimination of parasitic metal resistances and high accuracy for…”
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  5. 5

    GeSn-on-insulator substrate formed by direct wafer bonding by Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia

    Published in Applied physics letters (11-07-2016)
    “…GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge1- x Sn x layer…”
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  6. 6

    Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications by Ruize Sun, Liang, Yung C., Yee-Chia Yeo, Cezhou Zhao

    Published in IEEE transactions on electron devices (01-08-2017)
    “…AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion…”
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  7. 7

    Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity by Wu, Ying, Xu, Haiwen, Gong, Xiao, Yeo, Yee-Chia

    Published in IEEE transactions on electron devices (01-07-2019)
    “…A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact…”
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  8. 8

    Isolation and characterization of bioactive polyacetylenes Panax ginseng Meyer roots by Yeo, Chia-Rou, Yong, Jin-Jie, Popovich, David G.

    “…•Polyacetylenic compounds isolated from Panax ginseng root typically comprised of non-polar C17 compound have been reported to exhibit bioactive…”
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  9. 9

    Ballistic Transport Performance of Silicane and Germanane Transistors by Low, Kain Lu, Huang, Wen, Yeo, Yee-Chia, Liang, Gengchiau

    Published in IEEE transactions on electron devices (01-05-2014)
    “…The ballistic transport performance of field-effect transistor (FET) based on hydrogenated silicene and germanene, i.e., silicane and germanane, respectively,…”
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  10. 10

    Identification of traditional medicinal plant extracts with novel anti-influenza activity by Rajasekaran, Dhivya, Palombo, Enzo A, Chia Yeo, Tiong, Lim Siok Ley, Diana, Lee Tu, Chu, Malherbe, Francois, Grollo, Lara

    Published in PloS one (27-11-2013)
    “…The emergence of drug resistant variants of the influenza virus has led to a need to identify novel and effective antiviral agents. As an alternative to…”
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  11. 11

    Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials by Low, Kain Lu, Yeo, Yee-Chia, Liang, Gengchiau

    Published in IEEE transactions on electron devices (01-02-2016)
    “…We report the ultimate performance of a double-gate ultrathin body (DG-UTB) FET employing materials from group IV, III-V, and 2-D materials based on…”
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  12. 12

    High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform by Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

    Published in Optics express (16-04-2018)
    “…We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET)…”
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  13. 13

    Fermentation of protopanaxadiol type ginsenosides (PD) with probiotic Bifidobacterium lactis and Lactobacillus rhamnosus by Tan, Joanne SH, Yeo, Chia-Rou, Popovich, David G

    Published in Applied microbiology and biotechnology (01-07-2017)
    “…Ginsenosides are believed to be the principal components behind the pharmacological actions of ginseng, and their bioactive properties are closely related to…”
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  14. 14

    Plant Essential Oils as Active Antimicrobial Agents by Seow, Yi Xin, Yeo, Chia Rou, Chung, Hui Ling, Yuk, Hyun-Gyun

    “…Essential oils derived from plants have been recognized for decades to exhibit biological activities, including antioxidant, anticancer, and antimicrobial…”
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  15. 15

    Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate by Wang, Wei, Li, Lingzi, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia

    Published in Applied surface science (01-12-2014)
    “…•Ge0.915Sn0.085 was grown on Ge (001) by molecular beam epitaxy (MBE).•The impact of annealing on surface morphology and Sn composition was studied.•Sn is…”
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  16. 16

    Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy by Richard D’Costa, Vijay, Wang, Wei, Zhou, Qian, Soon Tok, Eng, Yeo, Yee-Chia

    Published in Applied physics letters (13-01-2014)
    “…The complex dielectric function of biaxially strained Ge1−xSnx (0 ≤ x ≤ 0.17) alloys grown on Ge (100) has been determined by spectroscopic ellipsometry from…”
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  17. 17

    Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion by Sun, Ruize, Liang, Yung C., Yeo, Yee‐Chia, Wang, Yun‐Hsiang, Zhao, Cezhou

    “…In order to examine the feasibility of full wide‐bandgap GaN‐based converters in aerospace power conversion applications, this paper proposes a monolithic…”
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  18. 18

    Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate by Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

    Published in IEEE transactions on electron devices (01-09-2018)
    “…Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI…”
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  19. 19
  20. 20

    Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure by Wang, Wei, Lei, Dian, Dong, Yuan, Gong, Xiao, Tok, Eng Soon, Yeo, Yee-Chia

    Published in Scientific reports (12-05-2017)
    “…We developed a new digital etch process that allows precise etching of Germanium or Germanium-tin (Ge 1− x Sn x ) materials. The digital etch approach consists…”
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