Search Results - "Yen, F.Y."

HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…The authors have fabricated low-temperature fully silicided YbSi/sub 2-x/-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600…”
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HfSiON n-MOSFETs Using Low-Work Function hboxHfSixGate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…The authors have developed a novel high-temperature stable HfSi x gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi x /HfSiON devices…”
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HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

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High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate by WU, C. H, HUNG, B. F, TAO, H. J, CHEN, S. C, LIANG, M. S, CHIN, Albert, WANG, S. J, WANG, X. P, LI, M.-F, ZHU, C, YEN, F. Y, HOU, Y. T, JIN, Y

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Effective Work Function Engineering of \hbox\hbox Metal Gate on Hf-Based Dielectrics by Yen, F.Y., Hung, C.L., Hou, Y.T., Hsu, P.F., Chang, V.S., Lim, P.S., Yao, L.G., Jiang, J.C., Lin, H.J., Chen, C.C., Jin, Y., Jang, S.M., Tao, H.J., Chen, S.C., Liang, M.S.

“…This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on…”
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HfSiON n-MOSFETs Using Low-Work Function Gate by Wu, C.H, Hung, B.F, Chin, A, Wang, S.J, Yen, F.Y, Hou, Y.T, Jin, Y, Tao, H.J, Chen, S.C, Liang, M.S

“…The authors have developed a novel high-temperature stable HfSi sub(x) gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi…”
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High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function \hbox\hbox Gate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…We report a novel 1000 degC stable HfLaON p-MOSFET with Ir 3 Si gate. Low leakage current of 1.8times10 -5 A/cm 2 at 1 V above flat-band voltage, good…”
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Effective Work Function Engineering of [Formula Omitted] Metal Gate on Hf-Based Dielectrics by Yen, F.Y, Hung, C.L, Hou, Y.T, Hsu, P.F, Chang, V.S, Lim, P.S, Yao, L.G, Jiang, J.C, Lin, H.J, Chen, C.C, Jin, Y, Jang, S.M, Tao, H.J, Chen, S.C, Liang, M.S

“…The EWF was extracted by both terraced oxide and terraced high-k techniques with the bulk and interface charges taken into account…”
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Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application by Hsu, P.F., Hou, Y.T., Yen, F.Y., Chang, V.S., Lim, P.S., Hung, C.L., Yao, L.G., Jiang, J.C., Lin, H.J, Chiou, J.M., Yin, K.M., Lee, J.J, Hwang, R.L., Jin, Y., Chang, S.M., Tao, H.J., Chen, S.C., Liang, M.S., Ma, T.P

“…This paper reports the fabrication of MOSFETs with dual metal gate electrodes. Low threshold voltage (Vt) was achieved using TaC for nFETs and MoNx for pFETs…”
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High performance tantalum carbide metal gate stacks for nMOSFET application by Hou, Y.T., Yen, F.Y., Hsu, P.F., Chang, V.S., Lim, P.S., Hung, C.L., Yao, L.G., Jiang, J.C., Lin, H.J., Jin, Y., Jang, S.M., Tao, H.J., Chen, S.C., Liang, M.S.

“…A systematic study is performed on tantalum carbide (TaC) metal electrode on HfO 2 and HfSiON dielectrics using conventional CMOS process. TaC's effective work…”
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