Search Results - "Yeh, S. F."
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Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory
Published in IEEE electron device letters (01-09-2010)“…Using novel stacked covalent-bond-dielectric GeO x (GeO) on metal-oxide SrTiO 3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an…”
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Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
Published in Solid-state electronics (01-07-2012)“…► Nitrogen-doped GeO/TaON RRAM shows low 0.6pJ energy and good 106 endurance. ► Excellent uniformity is attributed to nitrogen-related defects in TaON for…”
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Ultralow Switching Energy Ni/ \hbox /HfON/TaN RRAM
Published in IEEE electron device letters (01-03-2011)“…Using stacked covalent-bond-dielectric GeO x , on metal-oxynitride HfON, the Ni/GeO x /HfON/TaN resistive random access memory (RRAM) showed ultralow set power…”
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Optimal design of sewer network by tabu search and simulated annealing
Published in 2013 IEEE International Conference on Industrial Engineering and Engineering Management (01-12-2013)“…Optimal sewer network designs are NP-hard and highly complicated nonlinear problems. Conventional optimization techniques often easily get bogged down in local…”
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Conference Proceeding -
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Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
Published in IEEE electron device letters (01-09-2009)“…In this letter, we report a low threshold voltage ( V t ) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only…”
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Bipolar switching characteristics of low-power Geo resistive memory
Published in Solid-state electronics (01-08-2011)“…► We demonstrate GeO x RRAM with both cost-effective and ultra-low power. ► Hopping conduction mechanism effectively lowers switched currents. ►…”
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Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers
Published in IEEE electron device letters (01-04-2008)“…We have fabricated the [TaN-Ir 3 Si]-HfAlO-LaAlO 3 -Hf 0.3 O 0.5 N 0.2 -HfAlO-SiO 2 -Si double quantum-barrier charge- trapping memory device. Under fast 100…”
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Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions
Published in IEEE electron device letters (01-06-2009)“…We demonstrate a low threshold voltage (Vt) of -0.17 V and good hole mobility (54 cm 2 /V middot s at 0.8 MV/cm) in TaN/Ir/LaTiO p-MOSFETs at an equivalent…”
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Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers
Published in IEEE transactions on electron devices (01-07-2008)“…We have studied the performance of double-quantum-barrier [TaN-Ir 3 Si]-[HfAlO-LaAlO 3 ]-Hf 0.3 N 0.2 O 0.5 -[HfAlO-SiO 2 ]-Si charge-trapping memory devices…”
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Ultralow Switching Energy Ni/GeOx/HfON/TaN RRAM
Published in IEEE electron device letters (01-03-2011)Get full text
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A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications
Published in IEEE electron device letters (01-12-2006)“…In this letter, the authors introduce a novel self-aligned etch-stopper sidewall-contact hydrogenated amorphous silicon (a-Si : H) thin-film transistor…”
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Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
Published in IEEE electron device letters (01-12-2011)Get full text
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Novel Ultra-low power RRAM with good endurance and retention
Published in 2010 Symposium on VLSI Technology (01-06-2010)“…We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off…”
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Conference Proceeding -
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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators
Published in IEEE electron device letters (01-07-2009)Get full text
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Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric
Published in Applied physics. A, Materials science & processing (01-08-2014)“…Using nano-crystallized aluminum oxynitride (nc-AlO x N y ) dielectric, the Al/nc-AlO x N y /AlN/n + -Si resistive random access memory (RRAM) with ultralow…”
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High Density and Low Leakage Current in TiO2 MIM Capacitors Processed at 300 °C
Published in IEEE electron device letters (01-08-2008)Get full text
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Comparison of MONOS Memory Device Integrity When Using Hf1-x-yNxOy Trapping Layers With Different N Compositions
Published in IEEE transactions on electron devices (01-06-2008)Get full text
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Development of Cost Functions for Open-Cut and Jacking Methods for Sanitary Sewer System Construction in Central Taiwan
Published in Practice periodical of hazardous, toxic, and radioactive waste management (01-10-2008)“…This study developed cost functions applicable to open-cut and jacking methods, which are construction techniques of sewer systems often used in gravel strata…”
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Downregulation of hepatitis B surface antigen expression in human hepatocellular carcinoma cell lines by HD-03, a polyherbal formulation
Published in Phytotherapy research (01-01-2003)“…Hepatitis B virus is associated with chronic or acute liver diseases and with hepatocellular carcinoma. In the present study, we examined the activity of…”
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Active compounds from Saussurea lappa Clarks that suppress hepatitis B virus surface antigen gene expression in human hepatoma cells
Published in Antiviral research (01-05-1995)“…We have examined the antiviral activity of the crude extract prepared from the root of Saussurea lappa Clarks, a Chinese medicinal herb which is widely used…”
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