Search Results - "Yeh, S. F"

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  1. 1

    Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory by Cheng, C H, Chin, Albert, Yeh, F S

    Published in IEEE electron device letters (01-09-2010)
    “…Using novel stacked covalent-bond-dielectric GeO x (GeO) on metal-oxide SrTiO 3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an…”
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    Journal Article
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    Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide by Cheng, C.H., Chen, P.C., Wu, Y.H., Wu, M.J., Yeh, F.S., Chin, Albert

    Published in Solid-state electronics (01-07-2012)
    “…► Nitrogen-doped GeO/TaON RRAM shows low 0.6pJ energy and good 106 endurance. ► Excellent uniformity is attributed to nitrogen-related defects in TaON for…”
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    Journal Article
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    Ultralow Switching Energy Ni/ \hbox /HfON/TaN RRAM by Cheng, C H, Chin, A, Yeh, F S

    Published in IEEE electron device letters (01-03-2011)
    “…Using stacked covalent-bond-dielectric GeO x , on metal-oxynitride HfON, the Ni/GeO x /HfON/TaN resistive random access memory (RRAM) showed ultralow set power…”
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    Journal Article
  4. 4

    Optimal design of sewer network by tabu search and simulated annealing by Yeh, S.-F, Chang, Y.-J, Lin, M.-D

    “…Optimal sewer network designs are NP-hard and highly complicated nonlinear problems. Conventional optimization techniques often easily get bogged down in local…”
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    Conference Proceeding
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    Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT by Lin, S.H., Yeh, F.S., Cheng, C.H., Chin, A., Chen, W.B.

    Published in IEEE electron device letters (01-09-2009)
    “…In this letter, we report a low threshold voltage ( V t ) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only…”
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    Journal Article
  6. 6

    Bipolar switching characteristics of low-power Geo resistive memory by Cheng, C.H., Chen, P.C., Liu, S.L., Wu, T.L., Hsu, H.H., Chin, Albert, Yeh, F.S.

    Published in Solid-state electronics (01-08-2011)
    “…► We demonstrate GeO x RRAM with both cost-effective and ultra-low power. ► Hopping conduction mechanism effectively lowers switched currents. ►…”
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    Journal Article
  7. 7

    Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers by Yang, H.J., Chin, A., Lin, S.H., Yeh, F.S., McAlister, S.P.

    Published in IEEE electron device letters (01-04-2008)
    “…We have fabricated the [TaN-Ir 3 Si]-HfAlO-LaAlO 3 -Hf 0.3 O 0.5 N 0.2 -HfAlO-SiO 2 -Si double quantum-barrier charge- trapping memory device. Under fast 100…”
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    Journal Article
  8. 8

    Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions by Lin, S.H., Chen, W.B., Cheng, C.H., Yeh, F.S., Chin, A.

    Published in IEEE electron device letters (01-06-2009)
    “…We demonstrate a low threshold voltage (Vt) of -0.17 V and good hole mobility (54 cm 2 /V middot s at 0.8 MV/cm) in TaN/Ir/LaTiO p-MOSFETs at an equivalent…”
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    Journal Article
  9. 9

    Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers by Lin, S.H., Yang, H.J., Chen, W.B., Yeh, F.S., McAlister, S.P., Chin, A.

    Published in IEEE transactions on electron devices (01-07-2008)
    “…We have studied the performance of double-quantum-barrier [TaN-Ir 3 Si]-[HfAlO-LaAlO 3 ]-Hf 0.3 N 0.2 O 0.5 -[HfAlO-SiO 2 ]-Si charge-trapping memory devices…”
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    Journal Article
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    A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications by Chung-Yu Liang, Feng-Yuan Gan, Po-Tsun Liu, Yeh, F.S., Chen, S.H.-L., Ting-Chang Chang

    Published in IEEE electron device letters (01-12-2006)
    “…In this letter, the authors introduce a novel self-aligned etch-stopper sidewall-contact hydrogenated amorphous silicon (a-Si : H) thin-film transistor…”
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    Journal Article
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    Novel Ultra-low power RRAM with good endurance and retention by Cheng, C H, Chin, A, Yeh, F S

    Published in 2010 Symposium on VLSI Technology (01-06-2010)
    “…We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off…”
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    Conference Proceeding
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    Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric by Chen, N. H., Zheng, Z. W., Cheng, C. H., Yeh, F. S.

    “…Using nano-crystallized aluminum oxynitride (nc-AlO x N y ) dielectric, the Al/nc-AlO x N y /AlN/n + -Si resistive random access memory (RRAM) with ultralow…”
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    Journal Article
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    Development of Cost Functions for Open-Cut and Jacking Methods for Sanitary Sewer System Construction in Central Taiwan by Yeh, S. F, Lin, M. D, Tsai, K. T

    “…This study developed cost functions applicable to open-cut and jacking methods, which are construction techniques of sewer systems often used in gravel strata…”
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    Journal Article
  19. 19

    Downregulation of hepatitis B surface antigen expression in human hepatocellular carcinoma cell lines by HD-03, a polyherbal formulation by Yeh, S. F., Gupta, Monika, Sarma, D. N. K., Mitra, S. K.

    Published in Phytotherapy research (01-01-2003)
    “…Hepatitis B virus is associated with chronic or acute liver diseases and with hepatocellular carcinoma. In the present study, we examined the activity of…”
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    Journal Article
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    Active compounds from Saussurea lappa Clarks that suppress hepatitis B virus surface antigen gene expression in human hepatoma cells by Chen, Hua-Chien, Chou, Chen-Kung, Lee, Shou-Dong, Wang, Ju-Chun, Yeh, Sheau-Farn

    Published in Antiviral research (01-05-1995)
    “…We have examined the antiviral activity of the crude extract prepared from the root of Saussurea lappa Clarks, a Chinese medicinal herb which is widely used…”
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    Journal Article