Search Results - "Yau, K.H.K"

Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio by Terry Yao, Gordon, M.Q., Tang, K.K.W., Yau, K.H.K., Ming-Ta Yang, Schvan, P., Voinigescu, S.P.

“…Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based on algorithmic design methodologies for mm-wave CMOS amplifiers, in a…”
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The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks by Dickson, T.O., Yau, K.H.K., Chalvatzis, T., Mangan, A.M., Laskin, E., Beerkens, R., Westergaard, P., Tazlauanu, M., Ming-Ta Yang, Voinigescu, S.P.

“…This paper provides evidence that, as a result of constant-field scaling, the peak f T (approx. 0.3 mA/mum), peak f MAX (approx. 0.2 mA/mum), and optimum noise…”
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A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset by Nicolson, S.T., Yau, K.H.K., Pruvost, S., Danelon, V., Chevalier, P., Garcia, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.

“…This paper presents a complete 2.5-V 77-GHz chipset for Doppler radar and imaging applications fabricated in SiGe HBT and SiGe BiCMOS technologies. The chipset…”
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Design and Scaling of W-Band SiGe BiCMOS VCOs by Nicolson, S.T., Yau, K.H.K., Chevalier, P., Chantre, A., Sautreuil, B., Tang, K.W., Voinigescu, S.P.

“…This paper discusses the design of 77-106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with…”
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Low-Voltage Topologies for 40-Gb/s Circuits in Nanoscale CMOS by Chalvatzis, T., Yau, K.H.K., Aroca, R.A., Schvan, P., Ming-Ta Yang, Voinigescu, S.P.

“…This paper presents low-voltage circuit topologies for 40-Gb/s communications in 90-nm and 65-nm CMOS. A retiming flip-flop implemented in two different 90-nm…”
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0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f T /f MAX )…”
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170-GHz transceiver with on-chip antennas in SiGe technology by Laskin, E., Tang, K.W., Yau, K.H.K., Chevalier, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.

“…A single-chip transceiver with on-die transmit and receive antennas, Rx and Tx amplifiers, 165-GHz oscillator and static frequency divider is reported in a…”
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0.13mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Voinigescu, S P, Revil, N, Chevalier, P, Pruvost, S, Bouvier, J, Avenier, G, Troillard, G, Depoyan, L, Buczko, M, Montusclat, S, Margain, A, Nicolson, S T, Yau, K.H.K., Gloria, D, Chantre, A, Diop, M, Loubet, N, Derrier, N, Leyris, C

“…This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz…”
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0.13 [Formula Omitted]m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G, Diop, M, Chevalier, P, Troillard, G, Loubet, N, Bouvier, J, Depoyan, L, Derrier, N, Buczko, M, Leyris, C, Boret, S, Montusclat, S, Margain, A, Pruvost, S, Nicolson, S.T, Yau, K.H.K, Revil, N, Gloria, D, Dutartre, D, Voinigescu, S.P, Chantre, A

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0.13μm SiGe BiCMOS technology for mm-wave applications by Avenier, G., Chevalier, P., Troillard, G., Vandelle, B., Brossard, F., Depoyan, L., Buczko, M., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f MAX )…”
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A Low-Voltage 77-GHz Automotive Radar Chipset by Nicolson, S.T., Tang, K.A., Yau, K.H.K., Chevalier, P., Sautreuil, B., Voinigescu, S.P.

“…This paper presents the first complete 2.5V, 77GHz chipset for Doppler radar and imaging applications fabricated in 0.13μm SiGe HBT technology. The chipset…”
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On-die source-pull for the characterization of the W-band noise performance of 65 nm general purpose (GP) and low power (LP) n-MOSFETs by Yau, K.H.K., Khanpour, M., Ming-Ta Yang, Schvan, P., Voinigescu, S.P.

“…A low-loss source-pull tuner network consisting of transmission lines and CMOS switches is integrated on the same chip with a W-band LNA in 65 nm RF CMOS…”
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CMOS SOCs at 100 GHz: System Architectures, Device Characterization, and IC Design Examples by Voinigescu, S.P., Nicolson, S.T., Khanpour, M., Tang, K.K.W., Yau, K.H.K., Seyedfathi, N., Timonov, A., Nachman, A., Eleftheriades, G., Schvan, P., Yang, M.T.

“…This paper investigates the suitability of 90nm and 65nm GP and LP CMOS technology for SOC applications in the 60GHz to 100GHz range. Examples of system…”
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A 40-Gb/s Decision Circuit in 90-nm CMOS by Chalvatzis, T., Yau, K.H.K., Schvan, P., Yang, M.T., Voinigescu, S.P.

“…A low-power 40-Gb/s decision circuit for fiber-optic and mm-wave analog-to-digital converter applications was implemented in two 90-nm processes from two…”
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Design and Scaling of SiGe BiCMOS VCOs Above 100GHz by Nicolson, S.T., Yau, K.H.K., Tang, K.A., Chevalier, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.

“…This paper presents a comparison of 100 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors and with…”
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A Transmission-Line Based Technique for De-Embedding Noise Parameters by Yau, K.H.K., Mangan, A.M., Chevalier, P., Schvan, P., Voinigescu, S.P.

“…A transmission line-based de-embedding technique for on-wafer S-parameter measurements is extended to the noise parameters of MOSFETs and HBTs. Since it…”
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Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits by Chevalier, P., Gloria, D., Scheer, P., Pruvost, S., Gianesello, F., Pourchon, F., Garcia, P., Vildeuil, J.-C., Chantre, A., Gamier, C., Noblanc, O., Voinigescu, S.P., Dickson, T.O., Laskin, E., Nicolson, S.T., Chalvatzis, T., Yau, K.H.K.

“…This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave…”
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SiGe BiCMOS for Analog, High-Speed Digital and Millimetre-Wave Applications Beyond 50 GHz by Voinigescu, S.P., Chalvatzis, T., Yau, K.H.K., Hazneci, A., Garg, A., Shahramian, S., Yao, T., Gordon, M., Dickson, T.O., Laskin, E., Nicolson, S.T., Carusone, A.C., Tchoketch-Kebir, L., Yuryevich, O., Ng, G., Lai, B., Liu, P.

“…This paper explores the application of SiGe BiCMOS technology to mm-wave transceiver with analog and digital signal processing. A review of 10 - 80Gb/s SERDES…”
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Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation by Yau, K.H.K., Voinigescu, S.P.

“…The technique to extract the SiGe HBT noise parameters only from the measured y-parameters is extended to account for the presence of noise correlation. Unlike…”
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Design and Modeling Considerations for Fully-Integrated Silicon W-Band Transceivers by Nicolson, S.T., Laskin, E., Khanpour, M., Aroca, R., Tomkins, A., Yau, K.H.K., Chevalier, P., Garcia, P., Chantre, A., Sautreuil, B., Voinigescu, S.P.

“…This paper presents circuit design methodologies, modeling techniques, and circuit architectures for silicon transceivers above 77 GHz. The architectures of…”
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