Search Results - "Yasin, Farrukh"

Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions by Grimaldi, Eva, Krizakova, Viola, Sala, Giacomo, Yasin, Farrukh, Couet, Sébastien, Sankar Kar, Gouri, Garello, Kevin, Gambardella, Pietro

“…Current-induced spin-transfer torques (STT) and spin–orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in non-volatile…”
Get full text

Spin–Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions by Vudya Sethu, Kiran Kumar, Yasin, Farrukh, Swerts, Johan, Sorée, Bart, De Boeck, Johan, Kar, Gouri Sankar, Garello, Kevin, Couet, Sebastien

“…Spin–orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic…”
Get full text

Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current by Kateel, Vaishnavi, Krizakova, Viola, Rao, Siddharth, Cai, Kaiming, Gupta, Mohit, Monteiro, Maxwel Gama, Yasin, Farrukh, Sorée, Bart, De Boeck, Johan, Couet, Sebastien, Gambardella, Pietro, Kar, Gouri Sankar, Garello, Kevin

“…Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them…”
Get full text

Design Space Exploration of FeRAM Bit Cell for DRAM Application by Oh, Hyungrock, Xiang, Yang, Redondo, Fernando Garcia, Gupta, Mohit Kumar, Perumkunnil, Manu, Bardon, Marie Garcia, Dhiman, Amit, Gowda, Sathisha Nanjunde, Walke, Amey, Fantini, Andrea, Yasin, Farrukh, Kar, Gouri Sankar, Hellings, Geert, Dehaene, Wim

“…HfOx-based ferroelectric random access memories (FeRAMs) have been proposed as a promising candidate to further dynamic random access memory (DRAM) scaling…”
Get full text

La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications by Walke, Amey M., Popovici, Mihaela I., Sharifi, Shamin H., Demir, Eyup C., Puliyalil, Harinarayanan, Bizindavyi, Jasper, Yasin, Farrukh, Clima, Sergiu, Fantini, Andrea, Belmonte, Attilio, Kar, Gouri S., Houdt, Jan V.

“…Integration density is one of the major criteria that ferroelectric (FE) capacitors must meet before they can be deployed in FeRAM memory arrays that can…”
Get full text

10¹²) for FeRAM Applications by Walke, Amey M, Popovici, Mihaela I, Sharifi, Shamin H, Demir, Eyup C, Harinarayanan Puliyalil, Bizindavyi, Jasper, Yasin, Farrukh, Clima, Sergiu, Fantini, Andrea, Belmonte, Attilio, Kar, Gouri S, Houdt, Jan V

“…70% of the initial polarization at the end of [Formula Omitted] and ~30% polarization is projected to remain at the end of 10 years. The retention was found to…”
Get full text

Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications by Huynh-Bao, Trong, Veloso, Anabela, Sakhare, Sushil, Matagne, Philippe, Ryckaert, Julien, Perumkunnil, Manu, Crotti, Davide, Yasin, Farrukh, Spessot, Alessio, Furnemont, Arnaud, Kar, Gouri, Mocuta, Anda

“…We present for the first time a co-integrated FinFET with vertical nanosheet transistor (VFET) process on a 300 mm silicon wafer for STT-MRAM applications and…”
Get full text

Spin-Orbit Torque MRAM for ultrafast embedded memories: from fundamentals to large scale technology integration by Garello, Kevin, Yasin, Farrukh, Kar, Gouri Sankar

“…Spin-orbit torque (SOT) magnetic random access memory (MRAM) is an emerging non-volatile memory that offers efficient and reliable sub-ns switching. It is…”
Get full text

Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications by Rao, Siddharth, Cai, Kaiming, Talmelli, Giacomo, Franchina-Vergel, Nathali, Janssens, Ward, Hody, Hubert, Yasin, Farrukh, Wostyn, Kurt, Couet, Sebastien

“…Spin-orbit torque (SOT) magnetic random-access memory (MRAM) is a 3-terminal non-volatile memory technology promising high speed up to multi-GHz, high…”
Get full text

Feasibility analysis of embedded MRAM solutions at advanced process nodes by Komalan, Manu Perumkunnil, Gupta, Mohit, Rao, Siddharth, Kim, Woojin, Yasin, Farrukh, Couet, Sebastien, Furnemont, Arnaud, Kar, Gouri Sankar

“…While many MRAM solutions have been proposed as alternatives to conventional memory solutions (like SRAM, eDRAM and NOR-FLASH) for the embedded domain,…”
Get full text

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current by Kateel, Vaishnavi, Krizakova, Viola, Rao, Siddharth, Cai, Kaiming, Gupta, Mohit, Monteiro, Maxwel Gama, Yasin, Farrukh, Sorée, Bart, De Boeck, Johan, Couet, Sebastien, Gambardella, Pietro, Kar, Gouri Sankar, Garello, Kevin

“…Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it…”
Get full text

Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing by Wu, Lizhou, Rao, Siddharth, Medeiros, Guilherme Cardoso, Taouil, Mottaqiallah, Marinissen, Erik Jan, Yasin, Farrukh, Couet, Sebastien, Hamdioui, Said, Kar, Gouri Sankar

“…The STT-MRAM manufacturing process involves not only traditional CMOS process steps, but also the integration of magnetic tunnel junction (MTJ) devices, the…”
Get full text

Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions by Grimaldi, Eva, Krizakova, Viola, Sala, Giacomo, Yasin, Farrukh, Couet, Sébastien, Kar, Gouri Sankar, Garello, Kevin, Gambardella, Pietro

“…Nature Nanotechnology 15, 111-117 (2020) Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic…”
Get full text