Search Results - "Yao, Jing Neng"

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications by Yao, Jing-Neng, Lin, Yueh-Chin, Hsu, Heng-Tung, Yang, Kai-Chun, Hsu, Hisang-Hua, Sze, Simon M., Chang, Edward Yi

“…In this paper, a 100-nm gate length InAs high electron mobility transistor (HEMT) with non-alloyed Ti/Pt/Au ohmic contacts and mesa sidewall channel etch was…”
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A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC by Tsui, Bing-Yue, Hsiao, Jui-Tse, Wang, Ming-Han, Hung, Chia-Lung, Hsiao, Yi-Kai, Yao, Jing-Neng, Chiang, Kuang-Hao, Ho, ChiaHua, Kuo, Hao-Chung

“…Reducing the on-resistance of SiC MOSFETs is crucial for lowering power losses and is a key aspect of MOSFET design. This letter proposes a recessed source…”
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Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application by Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chang, Edward Yi

“…This letter reports an E-mode GaN MIS-HEMT using a composite La 2 O 3 /HfO 2 gate insulator for power device applications. The composite dielectric formed an…”
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Study of tri-gate AlGaN/GaN MOS-HEMTs for power application by Huang, Kuan Ning, Lin, Yueh Chin, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Wu, Chieh Ying, Chien, Chao Hsin, Chang, Edward Yi

“…In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel…”
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An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure by Jing-Neng Yao, Yueh-Chin Lin, Yu-Lin Chuang, Yu-Xiang Huang, Wang-Cheng Shih, Sze, Simon M., Chang, Edward Yi

“…We demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved…”
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Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications by Huang, Kuan Ning, Lin, Yueh Chin, Wu, Chieh Ying, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Chien, Chao Hsin, Chang, Edward Yi

“…In this work, an enhancement-mode (E-mode) p-GaN gate metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) with 10-nm-thick Al 2 O 3 film was…”
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Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications by Lin, Yueh-Chin, Yao, Jing-Neng, Hsu, Hisang-Hua, Wong, Ying-Chieh, Huang, Chi-Yi, Hsu, Heng Tung, Iwai, Hiroshi, Chang, Edward Yi

“…InAs HEMTs with a mesa etch structure that connects the Schottky gate through mesa sidewall with InAlAs layers were fabricated. The gate metal connection to…”
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Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO2 nanotube-arrays for more efficient photoenergy conversion by Kuo, Yu-Yen, Li, Tze-Huei, Yao, Jing-Neng, Lin, Chiung-Yuan, Chien, Chao-Hsin

“…[Display omitted] ► Hydrothermally crystallized nanotubes show improved cyrstallinity. ► Basic hydrothermal pH induces morphological transformation of the…”
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Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications by Yao, Jing Neng, Lin, Yueh Chin, Lin, Min Song, Huang, Ting Jui, Hsu, Heng Tung, Sze, Simon M., Chang, Edward Y.

“…•We have edited the highlights as below and attached.•InAs HEMTs electrical performance improvement by SCFP.•SS of 76 mV/dec, DIBL of 44 mV/V, and Ion/Ioff of…”
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WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application by Huang, Kuan Ning, Lin, Yueh Chin, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Wu, Chieh Ying, Chien, Chao Hsin, Chang, Edward Yi

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications by Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

“…An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La 2 O 3 /SiO 2 gate insulator is…”
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Enhancement-Mode GaN MIS-HEMTs With LaHfO x Gate Insulator for Power Application by Lin, Yueh Chin, Huang, Yu Xiang, Huang, Gung Ning, Wu, Chia Hsun, Yao, Jing Neng, Chu, Chung Ming, Chang, Shane, Hsu, Chia Chieh, Lee, Jin Hwa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chang, Edward Yi

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Inx Ga1−x As materials for post CMOS application: Materials and device aspects by Chang, Edward Yi, Yueh-Chin Lin, Quang-Ho Luc, Hai-Dang Trinh, Jing-Neng Yao, Po-Chun Chang

“…High mobility In x Ga 1-x As material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, In x…”
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Hydrothermal crystallization and modification of surface hydroxyl groups of anodized Ti02 nanotube-arrays for more efficient photoenergy conversion by KUO, Yu-Yen, LI, Tze-Huei, YAO, Jing-Neng, LIN, Chiung-Yuan, CHIEN, Chao-Hsin

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Single Magnetic Atom on a Surface: Anisotropy Energy and Spin Density by Yao, Jing-Neng, Lin, Chiung-Yuan

“…Studying single-atom magnetic anisotropy on surfaces enables the exploration of the smallest magnetic storage bit that can be built. In this work, magnetic…”
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