Search Results - "Yannuzzi, M. J."

Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors by Moser, N. A., Gillespie, J. K., Via, G. D., Crespo, A., Yannuzzi, M. J., Jessen, G. H., Fitch, R. C., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J.

“…Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an…”
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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.

“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The…”
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High performance 0.14 mum gate-length AlGaN/GaN power HEMTs on SiC by Jessen, G H, Fitch, R C, Gillespie, J K, Via, G D, Moser, N A, Yannuzzi, M J, Crespo, A, Sewell, J S, Dettmer, R W, Jenkins, T J, Davis, R F, Yang, J, Khan, M A, Binari, S C

“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The…”
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Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Dettmer, R.W., Jenkins, T.J.

“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with WSi, Ir, Pd, and Ni Schottky contacts. The…”
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