Search Results - "Yankovskii, Yu. N."

Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes by Koval’chuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovsky, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of electrophysical parameters of pin- silicon-based photodiodes, depending on their operating modes (external bias and temperature),…”
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Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor by Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Filipenya, V. A., Yavid, V. Yu, Yankovskii, Yu. N.

“…It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra…”
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Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions by Brinkevich, D. I., Kharchenko, A. A., Prosolovich, V. S., Odzhaev, V. B., Brinkevich, S. D., Yankovskii, Yu. N.

“…We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В + and Р +…”
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Defect formation in silicon implanted with ∼1 MeV/nucleon ions by Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Prosolovich, V. S., Yankovskii, Yu. N.

“…Defect formation processes in silicon implanted with ∼1 MeV/nucleon boron, oxygen, and argon ions have been studied using microhardness and Hall effect…”
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Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta by Kovalchuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovskii, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of the changes in the electrophysical parameters of PIN photodiodes made on monocrystalline silicon wafers of the p -type of…”
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Modification of the positive photoresist surface by ion implantation by Brinkevich, D. I., Brinkevich, S. D., Lukashevich, M. G., Prosolovich, V. S., Odzhaev, V. B., Yankovskii, Yu. N.

“…It is experimentally shown by atomic-force microscopy methods that cone-shaped structures that are nonuniformly distributed over the surface are formed on the…”
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Physical and mechanical properties of silicon near the SiO2/Si interface by Brinkevich, D. I., Vabishchevich, N. V., Vabishchevich, S. A., Petlitski, A. N., Prosolovich, V. S., Yankovskii, Yu. N.

“…The influence of an oxide coating on the strength characteristics of single-crystal silicon surface layers is investigated by the microindentation method. It…”
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Effect of rare-earth doping on the microhardness of silicon and germanium by BRINKEVICH, D. I, VABISHCHEVICH, S. A, VABISHCHEVICH, N. V, PROSOLOVICH, V. S, YANKOVSKII, Yu. N

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Effect of rare-earth impurities on the magnetoresistance of single-crystal silicon by BRINKEVICH, D. I, LUKASHEVICH, M. G, PROSOLOVICH, V. S, SKRIPKA, D. A, YANKOVSKII, Yu. N

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