Search Results - "Yang, Jiangheng"
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The origin of ferroelectricity in HfO2 from orbital hybridization and covalency
Published in Applied physics letters (30-09-2024)“…Fluorite-structured HfO2 ferroelectrics exhibit remarkable ferroelectricity owing to the robust thickness scalability, rendering them promising for…”
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SUPPLY NETWORK POSITION AND FIRM PERFORMANCE: EVIDENCE FROM CHINESE LISTED MANUFACTURING COMPANIES
Published in Journal of business economics and management (01-01-2019)“…The aim of this paper is to examine the relationship between supply network position and firm performance. A-share manufacturing companies listed from 2013 to…”
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Mechanical-electrical-chemical coupling study on the stabilization of a hafnia-based ferroelectric phase
Published in npj computational materials (09-12-2023)“…The metastable polar orthorhombic phase is believed to be the origin of the ferroelectricity of hafnia-based films. The adjustment of stain, oxygen vacancies…”
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Kinetical phase transition paths and phase stability in ferroelectric HfO2
Published in Scripta materialia (15-03-2024)Get full text
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PpAmy1 Plays a Role in Fruit-Cracking by Regulating Mesocarp Starch Hydrolysis of Nectarines
Published in Journal of agricultural and food chemistry (07-02-2024)“…Nectarine [Prunus persica (L.) Batsch var.] fruits are highly susceptible to cracking during the ripening process, which significantly decreases their…”
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Sub-5 nm Al-doped HfO2 ferroelectric thin films compatible with 3D NAND process
Published in Journal of alloys and compounds (05-12-2024)“…The HfO2-based ferroelectric thin films have provided new opportunity for ferroelectric field-effect transistors (FeFETs) to be the candidate for the…”
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Revaling the mechanism of microscopic kinking phenomena in Hf6Ta2O17 superstructures
Published in Materials today communications (01-08-2024)“…As a promising candidate for a new-generation thermal barrier coating material, Hf6Ta2O17 is characterized by its unique long-period superstructures and…”
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HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
Published in Fundamental research (Beijing) (01-05-2023)“…The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power…”
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HfO 2 -based ferroelectric thin film and memory device applications in the post-Moore era: A review
Published in Fundamental research (Beijing) (01-05-2023)“…The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power…”
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