Search Results - "Yang, Jeong Suk"
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Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer
Published in Advanced electronic materials (01-01-2023)“…Demand for increased scalability of oxide thin‐film transistors (TFTs) continues to rise, along with the need for ever‐higher integration densities and driving…”
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Hole Transport Enhancing Effects of Polar Solvents on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) for Organic Solar Cells
Published in ACS applied materials & interfaces (24-10-2012)“…This study analyzed the properties of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) thin-films prepared by spin-coating solutions…”
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Journal Article -
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A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM
Published in IEEE journal of solid-state circuits (01-11-2003)“…A 1.2-V 72-Mb double data rate 3 (DDR3) SRAM achieves a data rate of 1.5 Gb/s using dynamic self-resetting circuits. Single-ended main data lines halve the…”
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Journal Article -
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Effects of ZnO Nanoparticles on P3HT:PCBM Organic Solar Cells with DMF-Modulated PEDOT:PSS Buffer Layers
Published in ACS applied materials & interfaces (27-11-2013)“…In this study, we investigated hybrid bulk heterojunction organic solar cells containing ZnO nanoparticles blended with poly(3-hexylthiophene) (P3HT) and…”
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Journal Article -
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A 1.2 V 1.5 Gb/s 72 Mb DDR3 SRAM
Published in 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC (2003)“…A 1.2 V 72 Mb DDR3 SRAM in a 0.10 /spl mu/m CMOS process achieves a data rate of 1.5 Gb/s using dynamic self-resetting circuits. Single-ended main data lines…”
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