Search Results - "Yang, Fengtao"

Thermal Performances and Annual Damages Comparison of MMC Using Reverse Conducting IGBT and Conventional IGBT Module by Wang, Binyu, Wang, Laili, Mu, Wei, Qin, Mengjie, Yang, Fengtao, Liu, Jinjun, Tomoyuki, Yamazaki, Tatsuhiko, Fujihira

“…Insulated gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs) have inherent unbalanced power loss distribution and temperature…”
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Serum Klotho Is Elevated in Patients with Acute Myocardial Infarction and Could Predict Poor In-Hospital Prognosis by Pei, Yuanyuan, Huang, Wenfeng, Cao, Lingjie, Yang, Fengtao, Chi, Cheng, Zhu, Jihong

“…Klotho has emerged as a potential protective factor for cardiovascular diseases recently. Nevertheless, the levels of serum Klotho in acute coronary syndrome…”
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A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization by Zhao, Cheng, Wang, Laili, Zhang, Fan, Yang, Fengtao

“…Multichip SiC power modules with Kelvin-source connection are popular in applications with large capacity and high switching frequency. However, dynamic…”
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Cu Clip-Bonding Method With Optimized Source Inductance for Current Balancing in Multichip SiC MOSFET Power Module by Wang, Laili, Zhang, Tongyu, Yang, Fengtao, Ma, Dingkun, Zhao, Cheng, Pei, Yunqing, Gan, Yongmei

“…Cu clip-bonding is a promising packaging method for lower resistance, lower inductance, and higher reliability than wire-bonding. Previous studies only simply…”
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Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux by Mu, Wei, Wang, Laili, Wang, Binyu, Zhang, Tongyu, Yang, Fengtao, Gan, Yongmei, Zhang, Hong

“…Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, power modules…”
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Measurement of spatial coherence of partially coherent light by spatial averaging of speckle pattern by Chao, Xingbing, Yang, Fengtao, Sun, Guanghou, Ding, Jianping

“…•The spatial averaging of speckle pattern serves as an approach for measuring the spatial coherence of optical field.•Accelerate and streamline the measurement…”
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An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery over an Extremely Wide High-Temperature Range by Zhu, Mengyu, Pei, Yunqing, Yang, Fengtao, Cheng, Zizhen, Ma, Dingkun, Wang, Laili

“…Accurate switching loss prediction is crucial for studying the failure mechanisms of power modules at extremely high temperatures. However, the temperature…”
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Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC mosfet at Extremely High Temperatures by Lu, Xiaohui, Wang, Laili, Yang, Qingshou, Yang, Fengtao, Gan, Yongmei, Zhang, Hong

“…Due to the excellent silicon carbide (SiC) material characteristics, SiC mosfet s can operate at extremely high temperatures and can be used in harsh…”
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Surface microstructure evolution and enhanced properties of Ti-6Al-4V using scanning electron beam by Wei, Deqiang, Yang, Fengtao, Sui, Xinmeng, Lu, Jian, Ren, Xulong, Weng, Yitao, Song, Zhenfei, Mo, Zhenzhao

“…•Present a SEB to modify Ti-6Al-4V alloy, high energy density and rapid cooling rates.•Hardness, wear resistance and corrosion resistance were improved.•The…”
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Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications by Ma, Zaojun, Pei, Yunqing, Wang, Laili, Zhang, Tongyu, Wang, Haihua, Yang, Qingshou, Yang, Fengtao, Zhu, Mengyu

“…With the development of high-temperature packaging technology, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors ( mosfet s) can operate…”
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Analysis and Optimization of High-Frequency Switching Oscillation Conducted CM Current Considering Parasitic Parameters Based on a Half-Bridge Power Module by Yang, Qingshou, Wang, Laili, Qi, Zhiyuan, Lu, Xiaohui, Ma, Zaojun, Yang, Fengtao, Wang, Haihua

“…The SiC MOSFETs with anti-parallel SiC SBDs without reverse recovery can significantly reduce turn-on switching loss. However, this will exacerbate the…”
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Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement by Yang, Fengtao, Lixin, Jia, Wang, Laili, Zhang, Fan, Wang, Binyu, Zhao, Cheng, Wang, Jianpeng, Bayer, Christoph, Ferreira, Jan

“…Double-sided cooling based on planar packaging method features better thermal performance than traditional single-sided cooling based on wire bonds. However,…”
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Objective-Based Low-Frequency Parasitic Inductance Characterization Method for Power Semiconductor Package With High Power and Switching Speed by Yang, Fengtao, Wang, Laili, Cheng, Zizhen, Cui, Hongchang, Zhang, Tongyu, Kong, Hang, Gan, Yongmei, Jia, Lixin

“…Characterizing package parasitic inductance is significant for package design, dynamic characteristic evaluation, thermal management, and insulation breakdown…”
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Unveiling the effect of electron beam shock on the microstructure and wear resistance of Cr12MoV steel by Wang, Rong, Song, Zhenfei, Wei, Deqiang, Li, Xinkai, Song, Jinjie, Mo, Zhenzhao, Weng, Yitao, Yang, Fengtao

“…Enhancing wear resistance is the core factor that prolonged the life of the Cr12MoV mold and elevates the quality of the components produced. Hence, Cr12MoV…”
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Investigating the microstructure and high-temperature wear resistance of TiAl/WC coating modified via scanning electron beam by Weng, Yitao, Wang, Rong, Sui, Xinmeng, Song, Zhenfei, Wang, Kai, Mo, Zhenzhao, Yang, Fengtao, Huang, Xiangbiao, Ren, Xulong

“…In this study, TiAl/WC cladding coatings were modified to improve high-temperature wear resistance by scanning electron beam treatment. Results of the…”
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Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature by Yang, Fengtao, Wang, Laili, Kong, Hang, Zhu, Mengyu, Liu, Xingshuo, Lu, Xiaohui, Qin, Mengjie, Zhang, Tongyu, Gan, Yongmei, Jia, Lixin

“…Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher…”
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Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2 kV SiC Power Diodes for High-Temperature Applications by Zhu, Mengyu, Pei, Yunqing, Yang, Fengtao, Xue, Zhe, Ma, Dingkun, Wang, Laili

“…SiC power semiconductor devices exhibit the potential to operate at high temperatures; however, research regarding their high-temperature characteristics is…”
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A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions by Wang, Jianpeng, Chen, Wenjie, Wang, Laili, Wang, Binyu, Zhao, Cheng, Ma, Dingkun, Yang, Fengtao, Li, Yan

“…Junction temperature is a key parameter for the safe operation of power semiconductor devices in power electronic systems. However, it is difficult to forecast…”
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A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances by Ma, Dingkun, Xiao, Guochun, Zhang, Tongyu, Yang, Fengtao, Zhu, Mengyu, Yuan, Tianshu, Ma, Liangjun, Gan, Yongmei, Wang, Laili

“…This paper proposes a highly integrated multichip silicon carbide (SiC) MOSFET power module packaging with optimized electrical and thermal performances. The…”
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Air-Cooling System Optimization for IGBT Modules in MMC Using Embedded O-Shaped Heat Pipes by Wang, Binyu, Wang, Laili, Yang, Fengtao, Mu, Wei, Qin, Mengjie, Zhang, Fan, Ma, Dingkun, Wang, Jianpeng, Liu, Jinjun

“…Insulated gate bipolar transistor (IGBT) modules are the most critical components of modular multilevel converters (MMCs). However, they are subjected to…”
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