Search Results - "Yamamura, Kazuya"

Adhesive-free adhesion between heat-assisted plasma-treated fluoropolymers (PTFE, PFA) and plasma-jet-treated polydimethylsiloxane (PDMS) and its application by Ohkubo, Yuji, Endo, Katsuyoshi, Yamamura, Kazuya

“…Conventional low-temperature plasma treatment was reported to minimally improve the adhesion property of polytetrafluoroethylene (PTFE), whereas heat-assisted…”
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Atomic-scale and damage-free polishing of single crystal diamond enhanced by atmospheric pressure inductively coupled plasma by Luo, Hu, Ajmal, Khan Muhammad, Liu, Wang, Yamamura, Kazuya, Deng, Hui

“…Diamond is an imperative material for fabricating functional components used in ultra-hard cutting tools, infrared optical windows, high-performance heat…”
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Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing by Deng, Hui, Liu, Nian, Endo, Katsuyoshi, Yamamura, Kazuya

“…•Our results revealed that CeO2 slurry has better polishing performance compared with diamond, Al2O3 and SiO2 slurries.•Scratch removal mechanism in…”
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Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing by Deng, Hui, Endo, Katsuyoshi, Yamamura, Kazuya

“…To realize the damage-free finishing of CVD-SiC substrates, which are used as materials for space telescope mirrors and glass lens molds, plasma chemical…”
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Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface by Yang, Xiaozhe, Yang, Xu, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…An ultrasonic-assisted electrochemical mechanical polishing (UAECMP) technique that combines ultrasonic vibration and electrochemical mechanical polishing…”
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Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing by Yang, Xu, Yang, Xiaozhe, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…Slurryless electrochemical mechanical polishing (ECMP) was proposed and directly applied to sliced 4H–SiC (0001) surfaces. After ECMP for 2 h at a current…”
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Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate by Liu, Nian, Sugawara, Kohki, Yoshitaka, Naoya, Yamada, Hideaki, Takeuchi, Daisuke, Akabane, Yuko, Fujino, Kenichi, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap…”
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Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing by Deng, Hui, Endo, Katsuyoshi, Yamamura, Kazuya

“…Chemical mechanical polishing (CMP) combined with atmospheric-pressure plasma pretreatment was applied to a GaN (0001) substrate. The irradiation of a…”
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Towards atomic and close-to-atomic scale manufacturing by Fang, Fengzhou, Zhang, Nan, Guo, Dongming, Ehmann, Kornel, Cheung, Benny, Liu, Kui, Yamamura, Kazuya

“…Human beings have witnessed unprecedented developments since the 1760s using precision tools and manufacturing methods that have led to ever-increasing…”
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Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers by Yang, Xiaozhe, Yang, Xu, Gu, Haiyang, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…This paper proposes a slurryless, highly efficient polishing method called ultrasonic vibration assisted electrochemical mechanical polishing (UAECMP) to…”
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High-quality plasma-assisted polishing of aluminum nitride ceramic by Sun, Rongyan, Yang, Xu, Arima, Kenta, Kawai, Kentaro, Yamamura, Kazuya

“…Aluminum nitride (AlN) easily reacts with water when polished using an aqueous slurry. Moreover, grains tend to easily shed off of the AlN surface since it is…”
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Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing by Yang, Xu, Sun, Rongyan, Ohkubo, Yuji, Kawai, Kentaro, Arima, Kenta, Endo, Katsuyoshi, Yamamura, Kazuya

“…In an attempt to realize the high-quality and highly efficient polishing of SiC, the anodic oxidation mechanism of SiC was studied to enable the application of…”
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Separation of Neighboring Terraces on a Flattened Si(111) Surface by Selective Etching along Step Edges Using Total Wet Chemical Processing by Ma, Zhida, Masumoto, Seiya, Kawai, Kentaro, Yamamura, Kazuya, Arima, Kenta

“…We propose a bottom-up technique using total wet chemical treatments to separate neighboring terraces on Si(111). First, Ag cations were reduced at the step…”
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Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001) by Deng, Hui, Endo, Katsuyoshi, Yamamura, Kazuya

“…The surface atomic step-terrace structure of 4H-SiC greatly affects its performance in power device applications. On the basis of the crystal structure of…”
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Effects of polishing pressure and sliding speed on the material removal mechanism of single crystal diamond in plasma-assisted polishing by Liu, Nian, Sugimoto, Kentaro, Yoshitaka, Naoya, Yamada, Hideaki, Sun, Rongyan, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…Plasma-assisted polishing (PAP) was confirmed to be high-efficiency and high-quality when applied to single crystal diamond (SCD) substrates. The effects of…”
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Cross-sectional observation of a weak boundary layer in polytetrafluoroethylene (PTFE) using scanning electron microscope by Seto, Yosuke, Nishino, Misa, Okazaki, Yuki, Endo, Katsuyoshi, Yamamura, Kazuya, Ohkubo, Yuji

“…A weak boundary layer (WBL), at the surface of polymers, causes poor adhesion, but such a WBL has not been characterized or quantified. In this study, to…”
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Breaking the 10 nm barrier in hard-X-ray focusing by Mimura, Hidekazu, Handa, Soichiro, Kimura, Takashi, Yumoto, Hirokatsu, Yamakawa, Daisuke, Yokoyama, Hikaru, Matsuyama, Satoshi, Inagaki, Kouji, Yamamura, Kazuya, Sano, Yasuhisa, Tamasaku, Kenji, Nishino, Yoshinori, Yabashi, Makina, Ishikawa, Tetsuya, Yamauchi, Kazuto

“…Hard X-rays have exceptional properties that are useful in the chemical, elemental and structure analysis of matter. Although single-nanometre resolutions in…”
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Highly efficient finishing of large-sized single crystal diamond substrates by combining nanosecond pulsed laser trimming and plasma-assisted polishing by Liu, Nian, Sugimoto, Kentaro, Yoshitaka, Naoya, Yamada, Hideaki, Sun, Rongyan, Arima, Kenta, Yamamura, Kazuya

“…Diamond is an ideal material for fabricating functional components applied in power devices, heat spreaders, and surface acoustic wave. However, diamond's…”
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Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing by Yang, Xu, Yang, Xiaozhe, Kawai, Kentaro, Arima, Kenta, Yamamura, Kazuya

“…In this work, a three-step silicon carbide (SiC) wafer manufacturing process using slurryless electrochemical mechanical polishing (ECMP) is proposed. In the…”
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Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening by Deng, Hui, Endo, Katsuyoshi, Yamamura, Kazuya

“…The thermal oxidation and water vapor plasma oxidation of 4H-SiC (0001) were investigated. The initial oxidation rate of helium-based atmospheric-pressure…”
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