Search Results - "Yamamoto, Kazutomi"

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  1. 1
    Growth and strain characterization of high quality GaN crystal by HVPE

    Growth and strain characterization of high quality GaN crystal by HVPE by Geng, Huiyuan, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Atsushi Yamaguchi, A., Usui, Akira

    Published in Journal of crystal growth (01-07-2012)
    “…Freestanding GaN crystals were fabricated by hydride vapor phase epitaxy using a random-islands facet-initiated epitaxial overgrowth technique. In this method,…”
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    Journal Article Conference Proceeding
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  2. 2
    Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

    Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

    Published in Journal of crystal growth (01-05-2009)
    “…A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane…”
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    Journal Article Conference Proceeding
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  3. 3
    Effect of aluminum carbide buffer layer on growth and self-separation of m -plane GaN by hydride vapor phase epitaxy

    Effect of aluminum carbide buffer layer on growth and self-separation of m -plane GaN by hydride vapor phase epitaxy by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

    “…An m ‐plane GaN layer with a thickness of approximately 500 μm was successfully obtained on a conventional m ‐plane sapphire substrate with a diameter of 2…”
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  4. 4
    Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy

    Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy by Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

    Published in Japanese Journal of Applied Physics (01-01-2011)
    “…Distributions of residual stresses in the cross-section of as-grown $c$-plane freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE) were…”
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  5. 5
    Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy

    Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy by Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

    Published in Japanese Journal of Applied Physics (01-01-2011)
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  6. 6
    Fabrication of freestanding @@im@-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an @@im@-plane sapphire substrate

    Fabrication of freestanding @@im@-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an @@im@-plane sapphire substrate by Sasaki, Hitoshi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

    Published in Journal of crystal growth (01-05-2009)
    “…A freestanding @@im@-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an…”
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